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NO Other Function Transistors 43

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
S1236 by Toshiba

S1236

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

4 A

SINGLE

40

e0

1

140 Cel

NPN

40 W

Other Transistors

NO

Tin/Lead (Sn/Pb)

10 MHz

2N5952-D74Z by Fairchild Semiconductor

2N5952-D74Z

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; Field Effect Transistor Technology: JUNCTION;

JUNCTION

e3

150 Cel

N-CHANNEL

.35 W

Other Transistors

NO

Matte Tin (Sn)

DP200 by Kodenshi Auk

DP200

Kodenshi Auk

Kodenshi Auk's DP200 is a PNP transistor with max power dissipation of 0.625W, ideal for low-power applications. With a min hFE of 40 and max IC of 1A, it operates up to 150°C, making it suitable for various electronic circuits requiring single configuration transistors.

1 A

SINGLE

40

1

150 Cel

PNP

.625 W

Other Transistors

NO

2N4338-E3 by Vishay Intertechnology

2N4338-E3

Vishay Intertechnology

Vishay Intertechnology's 2N4338-E3 is an N-CHANNEL transistor with a max power dissipation of 0.3W and max operating temp of 200°C. It utilizes JUNCTION technology, has matte tin terminal finish, and can withstand peak reflow temp of 260°C. Ideal for various electronic applications requiring high temperature resistance.

JUNCTION

e3

1

200 Cel

260

N-CHANNEL

.3 W

Other Transistors

NO

MATTE TIN

40

2N4339-E3 by Vishay Intertechnology

2N4339-E3

Vishay Intertechnology

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 200 Cel;

JUNCTION

e3

1

200 Cel

N-CHANNEL

.3 W

Other Transistors

NO

Matte Tin (Sn)

BD243CTU by Fairchild Semiconductor

BD243CTU

Fairchild Semiconductor

BD243CTU by Fairchild Semiconductor is an NPN transistor with a max power dissipation of 65W and max collector current of 6A. With a min DC current gain of 15, it operates up to 150°C making it suitable for various applications in electronics circuits.

6 A

SINGLE

15

e3

1

150 Cel

NPN

65 W

Other Transistors

NO

Matte Tin (Sn)

BF245A,126 by NXP Semiconductors

BF245A,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

JUNCTION

e3

150 Cel

N-CHANNEL

.3 W

Other Transistors

NO

Matte Tin (Sn)

2SC6142(Q) by Toshiba

2SC6142(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 1.5 A; No. of Elements: 1;

1.5 A

SINGLE

100

1

150 Cel

NPN

1.1 W

Other Transistors

NO

2SJ681(Q) by Toshiba

2SJ681(Q)

Toshiba

Toshiba's 2SJ681(Q) is a P-CHANNEL transistor with max drain current of 5A and power dissipation of 20W. Ideal for applications requiring enhancement mode operation, such as in METAL-OXIDE SEMICONDUCTOR technology at up to 150°C operating temperature.

SINGLE

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

20 W

Other Transistors

NO

TTC5200(Q) by Toshiba

TTC5200(Q)

Toshiba

Toshiba's TTC5200(Q) NPN transistor offers 150W power dissipation, 80 min hFE, and 15A collector current. Ideal for high-power applications in electronics due to its single configuration and max operating temp of 150°C.

15 A

SINGLE

80

1

150 Cel

NPN

150 W

Other Transistors

NO

TTC0002(Q) by Toshiba

TTC0002(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 18 A; Minimum DC Current Gain (hFE): 80;

18 A

SINGLE

80

1

150 Cel

NPN

180 W

Other Transistors

NO

STX93003-AP by STMicroelectronics

STX93003-AP

STMicroelectronics

STX93003-AP by STMicroelectronics is a PNP transistor with max power dissipation of 1.5W, hFE of 16, and IC of 1A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.

1 A

SINGLE

16

e3

1

150 Cel

PNP

1.5 W

Other Transistors

NO

Matte Tin (Sn)

2SA1827S-AY by Onsemi

2SA1827S-AY

Onsemi

Onsemi's 2SA1827S-AY is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

4 A

SINGLE

140

1

150 Cel

PNP

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4731S-AY by Onsemi

2SC4731S-AY

Onsemi

2SC4731S-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 140, and IC of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

4 A

SINGLE

140

1

150 Cel

NPN

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4731T-AY by Onsemi

2SC4731T-AY

Onsemi

2SC4731T-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 200, and max collector current of 4A. Ideal for applications requiring high DC gain and moderate power handling in temperatures up to 150 °C.

4 A

SINGLE

200

1

150 Cel

NPN

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

TIP47-S by Bourns

TIP47-S

Bourns

The Bourns TIP47-S is an NPN transistor with a max power dissipation of 40W and max collector current of 1A. With a min DC current gain of 30, it operates up to 150°C. Ideal for various applications requiring a single configuration transistor with high power handling capabilities.

1 A

SINGLE

30

1

150 Cel

NPN

40 W

Other Transistors

NO

2SA1987O(Q) by Toshiba

2SA1987O(Q)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 80;

15 A

SINGLE

80

1

150 Cel

PNP

180 W

Other Transistors

NO

2SC5200O(Q) by Toshiba

2SC5200O(Q)

Toshiba

Toshiba's 2SC5200O(Q) NPN transistor offers a max power dissipation of 150W, min hFE of 80, and max IC of 15A. Ideal for high-power applications like audio amplifiers due to its single configuration and peak reflow temp of 260°C.

15 A

SINGLE

80

1

150 Cel

260

NPN

150 W

Other Transistors

NO

30

BD244B-S by Bourns

BD244B-S

Bourns

BD244B-S by Bourns is a PNP transistor with 65W power dissipation, 15 min hFE, and 6A collector current. Ideal for applications requiring high-power amplification in circuits operating up to 150°C.

6 A

SINGLE

15

1

150 Cel

PNP

65 W

Other Transistors

NO

BD244C-S by Bourns

BD244C-S

Bourns

BD244C-S by Bourns is a PNP transistor with a max power dissipation of 65W and max collector current of 6A. With hFE of min 15, it's ideal for high-power applications in temperatures up to 150°C.

6 A

SINGLE

15

1

150 Cel

PNP

65 W

Other Transistors

NO

TTC008(Q) by Toshiba

TTC008(Q)

Toshiba

Toshiba's TTC008(Q) NPN transistor has a max power dissipation of 1.1W, hFE of 80, and IC of 1.5A. Ideal for applications requiring a single NPN configuration, with an operating temp up to 150°C.

1.5 A

SINGLE

80

1

150 Cel

NPN

1.1 W

Other Transistors

NO

TTA0002(Q) by Toshiba

TTA0002(Q)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 18 A; Maximum Operating Temperature: 150 Cel;

18 A

SINGLE

80

1

150 Cel

PNP

180 W

Other Transistors

NO

TTC012(Q) by Toshiba

TTC012(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;

2 A

SINGLE

80

1

150 Cel

NPN

1.1 W

Other Transistors

NO

NJW44H11G by Onsemi

NJW44H11G

Onsemi

NJW44H11G by Onsemi is an NPN transistor with a max power dissipation of 120W and a min DC current gain of 80. It can handle a max collector current of 10A and operates at temperatures up to 150 °C. Ideal for applications requiring high-power amplification in electronic circuits.

10 A

SINGLE

80

e3

1

150 Cel

NPN

120 W

Other Transistors

NO

Matte Tin (Sn) - annealed

2SA1855S-AY by Onsemi

2SA1855S-AY

Onsemi

2SA1855S-AY by Onsemi is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150°C.

4 A

SINGLE

140

1

150 Cel

PNP

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4837S-AY by Onsemi

2SC4837S-AY

Onsemi

2SC4837S-AY by Onsemi is an NPN transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.

4 A

SINGLE

140

1

150 Cel

NPN

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

J108,126 by NXP Semiconductors

J108,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO

J110,126 by NXP Semiconductors

J110,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO

J111,126 by NXP Semiconductors

J111,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO

BF357 by Texas Instruments

BF357

Texas Instruments

Texas Instruments' BF357 NPN transistor has a max power dissipation of 0.2W, operating temp of 150°C, and collector current of 0.05A. Ideal for applications requiring a single configuration such as amplifiers or signal processing circuits due to its nominal transition frequency of 1.6MHz.

.05 A

SINGLE

1

150 Cel

NPN

.2 W

Other Transistors

NO

1.6 MHz

BFW20 by Texas Instruments

BFW20

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Operating Temperature: 175 Cel;

SINGLE

1

175 Cel

PNP

.36 W

Other Transistors

NO

40 MHz

BC635-16,126 by NXP Semiconductors

BC635-16,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

100

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

BC875,126 by NXP Semiconductors

BC875,126

NXP Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

DARLINGTON

2000

150 Cel

NPN

.6 W

Other Transistors

NO

200 MHz

PBSS4350S,126 by NXP Semiconductors

PBSS4350S,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 3 A;

3 A

SINGLE

100

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS8110AS,126 by NXP Semiconductors

PBSS8110AS,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

80

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS8110S,126 by NXP Semiconductors

PBSS8110S,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

80

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS9110AS,126 by NXP Semiconductors

PBSS9110AS,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

125

1

150 Cel

PNP

.83 W

Other Transistors

NO

100 MHz

PBSS9110S,126 by NXP Semiconductors

PBSS9110S,126

NXP Semiconductors

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

125

150 Cel

PNP

.83 W

Other Transistors

NO

100 MHz

PH2369,126 by NXP Semiconductors

PH2369,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

SINGLE

40

1

150 Cel

NPN

.5 W

Other Transistors

NO

500 MHz

PN2369A,126 by NXP Semiconductors

PN2369A,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

SINGLE

40

1

150 Cel

NPN

.5 W

Other Transistors

NO

500 MHz

BUD42D-001 by Onsemi

BUD42D-001

Onsemi

BUD42D-001 by Onsemi is an NPN transistor with a max power dissipation of 25W and max collector current of 4A. With a min hFE of 8, it operates up to 150 °C making it ideal for high-power applications in various electronic circuits.

4 A

SINGLE

8

e0

1

1

150 Cel

235

NPN

25 W

Other Transistors

NO

TIN LEAD

BC337-025 by Onsemi

BC337-025

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Terminal Finish: TIN LEAD;

.8 A

SINGLE

160

e0

1

150 Cel

235

NPN

1.5 W

Other Transistors

NO

TIN LEAD

BC337-040 by Onsemi

BC337-040

Onsemi

BC337-040 by Onsemi is an NPN transistor with a max power dissipation of 1.5W and min DC current gain of 250. It operates at up to 150 °C, handles a max collector current of 0.8A, and has TIN LEAD terminal finish. Ideal for various electronic applications requiring reliable switching and amplification in compact designs.

.8 A

SINGLE

250

e0

1

150 Cel

235

NPN

1.5 W

Other Transistors

NO

TIN LEAD