NO Other Function Transistors 43

Part# Info			Specs
Part	RoHS	Manufacturer	Description	Additional Features	Case Connection	Maximum Collector Current (IC)	Maximum Collector-Base Capacitance	Maximum Collector-Emitter Voltage	Configuration	Minimum DC Current Gain (hFE)	Maximum Drain Current (Abs) (ID)	Maximum Drain Current (ID)	Field Effect Transistor Technology	Maximum Fall Time (tf)	Highest Frequency Band	JESD-30 Code	JESD-609 Code	Moisture Sensitivity Level (MSL)	No. of Elements	No. of Terminals	Operating Mode	Maximum Operating Temperature	Minimum Operating Temperature	Package Body Material	Package Shape	Package Style (Meter)	Peak Reflow Temperature (C)	Polarity or Channel Type	Maximum Power Dissipation Ambient	Maximum Power Dissipation (Abs)	Qualification	Maximum Rise Time (tr)	Sub-Category	Surface Mount	Terminal Finish	Terminal Form	Terminal Position	Maximum Time At Peak Reflow Temperature (s)	Transistor Application	Transistor Element Material	Nominal Transition Frequency (fT)	Maximum VCEsat
S1236		Toshiba	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;			4 A			SINGLE	40							e0		1			140 Cel						NPN		40 W			Other Transistors	NO	Tin/Lead (Sn/Pb)						10 MHz
2N5952-D74Z		Fairchild Semiconductor	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; Field Effect Transistor Technology: JUNCTION;										JUNCTION				e3					150 Cel						N-CHANNEL		.35 W			Other Transistors	NO	Matte Tin (Sn)
DP200		Kodenshi Auk	Kodenshi Auk's DP200 is a PNP transistor with max power dissipation of 0.625W, ideal for low-power applications. With a min hFE of 40 and max IC of 1A, it operates up to 150°C, making it suitable for various electronic circuits requiring single configuration transistors.			1 A			SINGLE	40									1			150 Cel						PNP		.625 W			Other Transistors	NO
2N4338-E3		Vishay Intertechnology	Vishay Intertechnology's 2N4338-E3 is an N-CHANNEL transistor with a max power dissipation of 0.3W and max operating temp of 200°C. It utilizes JUNCTION technology, has matte tin terminal finish, and can withstand peak reflow temp of 260°C. Ideal for various electronic applications requiring high temperature resistance.										JUNCTION				e3	1				200 Cel					260	N-CHANNEL		.3 W			Other Transistors	NO	MATTE TIN			40
2N4339-E3		Vishay Intertechnology	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 200 Cel;										JUNCTION				e3	1				200 Cel						N-CHANNEL		.3 W			Other Transistors	NO	Matte Tin (Sn)
BD243CTU		Fairchild Semiconductor	BD243CTU by Fairchild Semiconductor is an NPN transistor with a max power dissipation of 65W and max collector current of 6A. With a min DC current gain of 15, it operates up to 150°C making it suitable for various applications in electronics circuits.			6 A			SINGLE	15							e3		1			150 Cel						NPN		65 W			Other Transistors	NO	Matte Tin (Sn)
BF245A,126		NXP Semiconductors	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);										JUNCTION				e3					150 Cel						N-CHANNEL		.3 W			Other Transistors	NO	Matte Tin (Sn)
2SC6142(Q)		Toshiba	NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 1.5 A; No. of Elements: 1;			1.5 A			SINGLE	100									1			150 Cel						NPN		1.1 W			Other Transistors	NO
2SJ681(Q)		Toshiba	Toshiba's 2SJ681(Q) is a P-CHANNEL transistor with max drain current of 5A and power dissipation of 20W. Ideal for applications requiring enhancement mode operation, such as in METAL-OXIDE SEMICONDUCTOR technology at up to 150°C operating temperature.						SINGLE		5 A	5 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		20 W			Other Transistors	NO
TTC5200(Q)		Toshiba	Toshiba's TTC5200(Q) NPN transistor offers 150W power dissipation, 80 min hFE, and 15A collector current. Ideal for high-power applications in electronics due to its single configuration and max operating temp of 150°C.			15 A			SINGLE	80									1			150 Cel						NPN		150 W			Other Transistors	NO
TTC0002(Q)		Toshiba	NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 18 A; Minimum DC Current Gain (hFE): 80;			18 A			SINGLE	80									1			150 Cel						NPN		180 W			Other Transistors	NO
STX93003-AP		STMicroelectronics	STX93003-AP by STMicroelectronics is a PNP transistor with max power dissipation of 1.5W, hFE of 16, and IC of 1A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.			1 A			SINGLE	16							e3		1			150 Cel						PNP		1.5 W			Other Transistors	NO	Matte Tin (Sn)
2SA1827S-AY		Onsemi	Onsemi's 2SA1827S-AY is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.			4 A			SINGLE	140									1			150 Cel						PNP		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SC4731S-AY		Onsemi	2SC4731S-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 140, and IC of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.			4 A			SINGLE	140									1			150 Cel						NPN		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SC4731T-AY		Onsemi	2SC4731T-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 200, and max collector current of 4A. Ideal for applications requiring high DC gain and moderate power handling in temperatures up to 150 °C.			4 A			SINGLE	200									1			150 Cel						NPN		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
TIP47-S		Bourns	The Bourns TIP47-S is an NPN transistor with a max power dissipation of 40W and max collector current of 1A. With a min DC current gain of 30, it operates up to 150°C. Ideal for various applications requiring a single configuration transistor with high power handling capabilities.			1 A			SINGLE	30									1			150 Cel						NPN		40 W			Other Transistors	NO
2SA1987O(Q)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 80;			15 A			SINGLE	80									1			150 Cel						PNP		180 W			Other Transistors	NO
2SC5200O(Q)		Toshiba	Toshiba's 2SC5200O(Q) NPN transistor offers a max power dissipation of 150W, min hFE of 80, and max IC of 15A. Ideal for high-power applications like audio amplifiers due to its single configuration and peak reflow temp of 260°C.			15 A			SINGLE	80									1			150 Cel					260	NPN		150 W			Other Transistors	NO				30
BD244B-S		Bourns	BD244B-S by Bourns is a PNP transistor with 65W power dissipation, 15 min hFE, and 6A collector current. Ideal for applications requiring high-power amplification in circuits operating up to 150°C.			6 A			SINGLE	15									1			150 Cel						PNP		65 W			Other Transistors	NO
BD244C-S		Bourns	BD244C-S by Bourns is a PNP transistor with a max power dissipation of 65W and max collector current of 6A. With hFE of min 15, it's ideal for high-power applications in temperatures up to 150°C.			6 A			SINGLE	15									1			150 Cel						PNP		65 W			Other Transistors	NO
TTC008(Q)		Toshiba	Toshiba's TTC008(Q) NPN transistor has a max power dissipation of 1.1W, hFE of 80, and IC of 1.5A. Ideal for applications requiring a single NPN configuration, with an operating temp up to 150°C.			1.5 A			SINGLE	80									1			150 Cel						NPN		1.1 W			Other Transistors	NO
TTA0002(Q)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 18 A; Maximum Operating Temperature: 150 Cel;			18 A			SINGLE	80									1			150 Cel						PNP		180 W			Other Transistors	NO
TTC012(Q)		Toshiba	NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;			2 A			SINGLE	80									1			150 Cel						NPN		1.1 W			Other Transistors	NO
NJW44H11G		Onsemi	NJW44H11G by Onsemi is an NPN transistor with a max power dissipation of 120W and a min DC current gain of 80. It can handle a max collector current of 10A and operates at temperatures up to 150 °C. Ideal for applications requiring high-power amplification in electronic circuits.			10 A			SINGLE	80							e3		1			150 Cel						NPN		120 W			Other Transistors	NO	Matte Tin (Sn) - annealed
2SA1855S-AY		Onsemi	2SA1855S-AY by Onsemi is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150°C.			4 A			SINGLE	140									1			150 Cel						PNP		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SC4837S-AY		Onsemi	2SC4837S-AY by Onsemi is an NPN transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.			4 A			SINGLE	140									1			150 Cel						NPN		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
J108,126		NXP Semiconductors	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;										JUNCTION									150 Cel						N-CHANNEL		.4 W			Other Transistors	NO
J110,126		NXP Semiconductors	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;										JUNCTION									150 Cel						N-CHANNEL		.4 W			Other Transistors	NO
J111,126		NXP Semiconductors	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;										JUNCTION									150 Cel						N-CHANNEL		.4 W			Other Transistors	NO
BF357		Texas Instruments	Texas Instruments' BF357 NPN transistor has a max power dissipation of 0.2W, operating temp of 150°C, and collector current of 0.05A. Ideal for applications requiring a single configuration such as amplifiers or signal processing circuits due to its nominal transition frequency of 1.6MHz.			.05 A			SINGLE										1			150 Cel						NPN		.2 W			Other Transistors	NO							1.6 MHz
BFW20		Texas Instruments	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Operating Temperature: 175 Cel;						SINGLE										1			175 Cel						PNP		.36 W			Other Transistors	NO							40 MHz
BC635-16,126		NXP Semiconductors	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;			1 A			SINGLE	100									1			150 Cel						NPN		.83 W			Other Transistors	NO							100 MHz
BC875,126		NXP Semiconductors	NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;			1 A			DARLINGTON	2000												150 Cel						NPN		.6 W			Other Transistors	NO							200 MHz
PBSS4350S,126		NXP Semiconductors	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 3 A;			3 A			SINGLE	100									1			150 Cel						NPN		.83 W			Other Transistors	NO							100 MHz
PBSS8110AS,126		NXP Semiconductors	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;			1 A			SINGLE	80									1			150 Cel						NPN		.83 W			Other Transistors	NO							100 MHz
PBSS8110S,126		NXP Semiconductors	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;			1 A			SINGLE	80									1			150 Cel						NPN		.83 W			Other Transistors	NO							100 MHz
PBSS9110AS,126		NXP Semiconductors	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;			1 A			SINGLE	125									1			150 Cel						PNP		.83 W			Other Transistors	NO							100 MHz
PBSS9110S,126		NXP Semiconductors	PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;			1 A				125												150 Cel						PNP		.83 W			Other Transistors	NO							100 MHz
PH2369,126		NXP Semiconductors	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;			.2 A			SINGLE	40									1			150 Cel						NPN		.5 W			Other Transistors	NO							500 MHz
PN2369A,126		NXP Semiconductors	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;			.2 A			SINGLE	40									1			150 Cel						NPN		.5 W			Other Transistors	NO							500 MHz
BUD42D-001		Onsemi	BUD42D-001 by Onsemi is an NPN transistor with a max power dissipation of 25W and max collector current of 4A. With a min hFE of 8, it operates up to 150 °C making it ideal for high-power applications in various electronic circuits.			4 A			SINGLE	8							e0	1	1			150 Cel					235	NPN		25 W			Other Transistors	NO	TIN LEAD
BC337-025		Onsemi	NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Terminal Finish: TIN LEAD;			.8 A			SINGLE	160							e0		1			150 Cel					235	NPN		1.5 W			Other Transistors	NO	TIN LEAD
BC337-040		Onsemi	BC337-040 by Onsemi is an NPN transistor with a max power dissipation of 1.5W and min DC current gain of 250. It operates at up to 150 °C, handles a max collector current of 0.8A, and has TIN LEAD terminal finish. Ideal for various electronic applications requiring reliable switching and amplification in compact designs.			.8 A			SINGLE	250							e0		1			150 Cel					235	NPN		1.5 W			Other Transistors	NO	TIN LEAD