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NPN Other Function Transistors 110

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
S1236 by Toshiba

S1236

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

4 A

SINGLE

40

e0

1

140 Cel

NPN

40 W

Other Transistors

NO

Tin/Lead (Sn/Pb)

10 MHz

BFP405F-E6327 by Infineon Technologies

BFP405F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .055 W; Maximum Collector Current (IC): .012 A;

.012 A

SINGLE

50

1

1

150 Cel

260

NPN

.055 W

Other Transistors

YES

18000 MHz

BFP420F-E6327 by Infineon Technologies

BFP420F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.16 W

Other Transistors

YES

18000 MHz

BFR360L3-E6327 by Infineon Technologies

BFR360L3-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

90

1

150 Cel

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR360F-E6327 by Infineon Technologies

BFR360F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

60

1

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR380F-E6327 by Infineon Technologies

BFR380F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .38 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

90

1

1

150 Cel

260

NPN

.38 W

Other Transistors

YES

11000 MHz

BFS483-E6327 by Infineon Technologies

BFS483-E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A; Minimum DC Current Gain (hFE): 50;

.065 A

50

1

150 Cel

260

NPN

.45 W

Other Transistors

YES

6000 MHz

BSP51-E6327 by Infineon Technologies

BSP51-E6327

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

1 A

DARLINGTON

1000

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

SMBT3904U-E6327 by Infineon Technologies

SMBT3904U-E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;

.2 A

30

1

150 Cel

260

NPN

.33 W

Other Transistors

YES

300 MHz

SMBTA42-E6433 by Infineon Technologies

SMBTA42-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

25

1

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

50 MHz

BFR182W-E6327 by Infineon Technologies

BFR182W-E6327

Infineon Technologies

BFR182W-E6327 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 50, and nominal transition frequency of 6000MHz. Ideal for high-frequency amplification in electronic circuits with operating temperatures up to 150°C.

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

6000 MHz

BFN38-E6327 by Infineon Technologies

BFN38-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 25;

.2 A

SINGLE

25

1

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

BFR705L3RH-E6327 by Infineon Technologies

BFR705L3RH-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .04 W; Maximum Collector Current (IC): .01 A; Maximum Operating Temperature: 150 Cel;

.01 A

SINGLE

160

1

1

150 Cel

260

NPN

.04 W

Other Transistors

YES

BC818K-25-E6327 by Infineon Technologies

BC818K-25-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;

.5 A

SINGLE

160

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

BC818K-40-E6327 by Infineon Technologies

BC818K-40-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;

.5 A

SINGLE

250

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

BC817K-25W-E6433 by Infineon Technologies

BC817K-25W-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

SINGLE

160

1

150 Cel

NPN

.25 W

Other Transistors

YES

BC847BF-E6327 by Infineon Technologies

BC847BF-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200;

.1 A

SINGLE

200

1

150 Cel

NPN

.25 W

Other Transistors

YES

BFP540FESD-E6327 by Infineon Technologies

BFP540FESD-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

21000 MHz

2SC4957-A by Renesas Electronics

2SC4957-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Collector Current (IC): .03 A; No. of Elements: 1;

.03 A

SINGLE

75

1

150 Cel

NPN

.18 W

Other Transistors

YES

2SC4957-T1-A by Renesas Electronics

2SC4957-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.18 W

Other Transistors

YES

NE687M33-A by Renesas Electronics

NE687M33-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .09 W; Maximum Collector Current (IC): .03 A;

.03 A

SINGLE

70

1

150 Cel

NPN

.09 W

Other Transistors

YES

10000 MHz

NE687M33-T3-A by Renesas Electronics

NE687M33-T3-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .09 W; Maximum Collector Current (IC): .03 A;

.03 A

SINGLE

70

1

150 Cel

NPN

.09 W

Other Transistors

YES

10000 MHz

2SC4227-T1-A by Renesas Electronics

2SC4227-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .065 A; Minimum DC Current Gain (hFE): 40;

.065 A

SINGLE

40

1

150 Cel

NPN

.15 W

Other Transistors

YES

BD243CTU by Fairchild Semiconductor

BD243CTU

Fairchild Semiconductor

BD243CTU by Fairchild Semiconductor is an NPN transistor with a max power dissipation of 65W and max collector current of 6A. With a min DC current gain of 15, it operates up to 150°C making it suitable for various applications in electronics circuits.

6 A

SINGLE

15

e3

1

150 Cel

NPN

65 W

Other Transistors

NO

Matte Tin (Sn)

BFG520,235 by NXP Semiconductors

BFG520,235

NXP Semiconductors

BFG520,235 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Perfect for RF amplification in compact devices.

.07 A

SINGLE

60

e3

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFG520/X,235 by NXP Semiconductors

BFG520/X,235

NXP Semiconductors

BFG520/X,235 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design ensures efficient integration in compact circuits.

.07 A

SINGLE

60

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

BFG520/XR,235 by NXP Semiconductors

BFG520/XR,235

NXP Semiconductors

BFG520/XR,235 from NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design enhances versatility in electronic circuits.

.07 A

SINGLE

60

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

NE856M02-T1-AZ by Renesas Electronics

NE856M02-T1-AZ

Renesas Electronics

NE856M02-T1-AZ by Renesas Electronics is an NPN transistor with a max power dissipation of 1.2W and min DC current gain of 50. It operates at a max temperature of 150°C, making it suitable for various applications requiring a single configuration surface mount transistor with a collector current of 0.1A.

.1 A

SINGLE

50

1

150 Cel

NPN

1.2 W

Other Transistors

YES

NE856M03-A by Renesas Electronics

NE856M03-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

80

1

150 Cel

NPN

.125 W

Other Transistors

YES

3000 MHz

NE685M03-A by Renesas Electronics

NE685M03-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .03 A; No. of Elements: 1;

.03 A

SINGLE

75

1

150 Cel

NPN

.125 W

Other Transistors

YES

NE685M03-T1-A by Renesas Electronics

NE685M03-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.125 W

Other Transistors

YES

NE461M02-T1-AZ by Renesas Electronics

NE461M02-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .25 A; No. of Elements: 1;

.25 A

SINGLE

40

1

150 Cel

NPN

2 W

Other Transistors

YES

NE58219-T1-A by Renesas Electronics

NE58219-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .06 A;

.06 A

SINGLE

60

1

125 Cel

NPN

.1 W

Other Transistors

YES

3000 MHz

NE696M01-T1-A by Renesas Electronics

NE696M01-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Minimum DC Current Gain (hFE): 80;

.03 A

SINGLE

80

1

150 Cel

NPN

.15 W

Other Transistors

YES

NE678M04-T2-A by Renesas Electronics

NE678M04-T2-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .205 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 75;

.1 A

75

150 Cel

NPN

.205 W

Other Transistors

YES

NE677M04-T2-A by Renesas Electronics

NE677M04-T2-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .205 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1;

.05 A

SINGLE

75

1

150 Cel

NPN

.205 W

Other Transistors

YES

NE68019-T1-A by Renesas Electronics

NE68019-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;

.035 A

SINGLE

80

1

150 Cel

NPN

.1 W

Other Transistors

YES

NE68039-T1-A by Renesas Electronics

NE68039-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .035 A; Minimum DC Current Gain (hFE): 50;

.035 A

SINGLE

50

1

150 Cel

NPN

.2 W

Other Transistors

YES

2SC5015-A by Renesas Electronics

2SC5015-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.15 W

Other Transistors

YES

2SC5015-T1-A by Renesas Electronics

2SC5015-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.15 W

Other Transistors

YES

BFG410W,135 by NXP Semiconductors

BFG410W,135

NXP Semiconductors

BFG410W,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.054 W, a min DC current gain (hFE) of 50, and operates up to 150 °C. Perfect for RF amplification in compact devices.

.012 A

SINGLE

50

e3

1

150 Cel

260

NPN

.054 W

Other Transistors

YES

TIN

30

BFG425W,135 by NXP Semiconductors

BFG425W,135

NXP Semiconductors

NXP Semiconductors BFG425W,135 is an NPN transistor with a max power dissipation of 0.135W and min DC current gain of 50. It operates at up to 150°C, suitable for surface mount applications in electronics requiring a collector current of up to 0.03A.

.03 A

SINGLE

50

e3

1

1

150 Cel

260

NPN

.135 W

Other Transistors

YES

TIN

BFG480W,135 by NXP Semiconductors

BFG480W,135

NXP Semiconductors

BFG480W,135 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.36 W, a min DC current gain (hFE) of 40, and operates up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.

.25 A

SINGLE

40

e3

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

TIN

30

BFG67,235 by NXP Semiconductors

BFG67,235

NXP Semiconductors

BFG67,235 by NXP Semiconductors is an NPN single transistor ideal for high-frequency applications with a nominal transition frequency of 7500 MHz. It supports a max collector current of 50 mA and operates up to 175 °C. This surface-mount device excels in RF amplification tasks.

.05 A

SINGLE

60

e3

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

7500 MHz

BFQ67W,135 by NXP Semiconductors

BFQ67W,135

NXP Semiconductors

BFQ67W,135 by NXP Semiconductors is a single NPN transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, hFE of 60, and operates up to 150 °C. This versatile component is perfect for various electronic circuits requiring efficient signal amplification.

.05 A

SINGLE

60

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFR520,235 by NXP Semiconductors

BFR520,235

NXP Semiconductors

NXP Semiconductors' BFR520,235 is an NPN transistor with a single configuration and surface-mount capability. It features a max power dissipation of 0.3W, min DC current gain of 60, and max operating temp of 150°C. Ideal for applications requiring low collector current such as signal amplification in electronic circuits.

.07 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFR540,235 by NXP Semiconductors

BFR540,235

NXP Semiconductors

BFR540,235 by NXP Semiconductors is an NPN transistor designed for surface mount applications. It features a max power dissipation of 0.5W, a min DC current gain (hFE) of 60, and operates up to 150 °C. Ideal for amplifying signals in various electronic circuits.

.12 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

TIN

30

BFR93AW,135 by NXP Semiconductors

BFR93AW,135

NXP Semiconductors

NXP Semiconductors' BFR93AW,135 is an NPN transistor with a single configuration and surface-mount capability. It boasts a max power dissipation of 0.3W, DC current gain of 40, and transition frequency of 4500MHz. Ideal for applications requiring high-frequency signal amplification in environments up to 150°C.

.035 A

SINGLE

40

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

4500 MHz