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375 W Insulated Gate Bipolar Transistors (IGBT) 23

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW25H120DF2 by STMicroelectronics

STGW25H120DF2

STMicroelectronics

STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.

50 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

339 ns

41 ns

2.6 V

STGW60H60DLFB by STMicroelectronics

STGW60H60DLFB

STMicroelectronics

STGW60H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 375W Pd. It is used for POWER CONTROL applications due to its low VCEsat of 2V and fast turn-on time of 301ns. The device operates in a temperature range from -55 °C to 175°C and comes in a FLANGE MOUNT package style.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

301 ns

2 V

STGWT60H60DLFB by STMicroelectronics

STGWT60H60DLFB

STMicroelectronics

STGWT60H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 375W power dissipation. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style. Operating temperature ranges from -55 °C to 175°C.

COLLECTOR

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

301 ns

2 V

STGW60H65DFB by STMicroelectronics

STGW60H65DFB

STMicroelectronics

STGW60H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V max collector-emitter voltage, 80A max collector current, and 375W max power dissipation. It operates up to 175°C making it suitable for high-power applications like motor drives and inverters.

80 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

375 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT60H65DFB by STMicroelectronics

STGWT60H65DFB

STMicroelectronics

STGWT60H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 375W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

80 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

375 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT60V60DF by STMicroelectronics

STGWT60V60DF

STMicroelectronics

STGWT60V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (toff) of 243ns and high operating temperature range (-55 to 175 °C).

COLLECTOR

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

243 ns

80 ns

2.3 V

STGW60H65FB by STMicroelectronics

STGW60H65FB

STMicroelectronics

STGW60H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC. It is used for POWER CONTROL applications, featuring a 375W power dissipation and -55 to 175°C operating temperature range.

80 A

650 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

230 ns

104 ns

2 V

STGWT60H65FB by STMicroelectronics

STGWT60H65FB

STMicroelectronics

STGWT60H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC. It is designed for POWER CONTROL applications, featuring a max power dissipation of 375W and operating temperature range from -55 °C to 175°C.

COLLECTOR

80 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

230 ns

104 ns

2 V

STGW28IH125DF by STMicroelectronics

STGW28IH125DF

STMicroelectronics

STGW28IH125DF from STMicroelectronics is a robust N-channel IGBT ideal for high-power applications. It features a max VCEsat of 2.5V, 375W power dissipation, and operates up to 175 °C. Perfect for industrial drives and renewable energy systems.

COLLECTOR

60 A

1250 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

322 ns

2.5 V

STGWT28IH125DF by STMicroelectronics

STGWT28IH125DF

STMicroelectronics

STGWT28IH125DF from STMicroelectronics is a robust N-channel IGBT designed for high-efficiency applications. It features a max VCEsat of 2.5V, supports up to 375W power dissipation, and operates in extreme temps (-55 °C to 175 °C). Ideal for industrial motor control and power conversion.

COLLECTOR

60 A

1250 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

322 ns

2.5 V

AFGHL75T65SQDC by Onsemi

AFGHL75T65SQDC

Onsemi

AFGHL75T65SQDC by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 196.4ns and a max power dissipation of 375W. Ideal for high-power electronic systems requiring efficient switching capabilities.

LOW CONDUCTION LOSS

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

196.4 ns

73.6 ns

2.1 V

STGW25S120DF3 by STMicroelectronics

STGW25S120DF3

STMicroelectronics

STGW25S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 375W power dissipation, and operates at temperatures from -55 °C to 175 °C. Ideal for high-voltage systems with a max collector-emitter voltage of 1200V.

COLLECTOR

50 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

593 ns

43 ns

2.1 V

STGWA25S120DF3 by STMicroelectronics

STGWA25S120DF3

STMicroelectronics

STGWA25S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 375W power dissipation, and operates at temperatures from -55 °C to 175 °C. Ideal for high-voltage applications with a max collector-emitter voltage of 1200V.

COLLECTOR

50 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

593 ns

43 ns

2.1 V

STGWA25H120F2 by STMicroelectronics

STGWA25H120F2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED;

50 A

1200 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

339 ns

41 ns

STGWA25H120DF2 by STMicroelectronics

STGWA25H120DF2

STMicroelectronics

STGWA25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.6V, IC of 50A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (toff) of 339ns and high collector-emitter voltage of 1200V. Package style: FLANGE MOUNT, suitable for high-power operations in various industries.

50 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

339 ns

41 ns

2.6 V

STGWA60V60DF by STMicroelectronics

STGWA60V60DF

STMicroelectronics

STGWA60V60DF from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.3 V, supports up to 600 V collector-emitter voltage, and has a power dissipation of 375 W. Its robust design ensures reliable performance in demanding environments.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

243 ns

80 ns

2.3 V

STGWA50M65DF2 by STMicroelectronics

STGWA50M65DF2

STMicroelectronics

STGWA50M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 80A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (315ns) and high collector-emitter voltage rating (650V). Suitable for use in various industrial settings requiring efficient power management.

80 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

315 ns

66 ns

2.1 V

FGH75T65SQDTL4 by Onsemi

FGH75T65SQDTL4

Onsemi

FGH75T65SQDTL4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 150A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max operating temperature of 175 °C and turn-off time of 352ns, making it suitable for high-power systems.

RC-IGBT

150 A

650 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

352 ns

80 ns

2.1 V

STGW60H65DFB-4 by STMicroelectronics

STGW60H65DFB-4

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Transistor Application: POWER CONTROL;

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

329 ns

91 ns

2 V

STGWA60V60DWFAG by STMicroelectronics

STGWA60V60DWFAG

STMicroelectronics

STGWA60V60DWFAG from STMicroelectronics is a robust N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 600V collector-emitter voltage, and operates efficiently at temperatures from -55 °C to 175 °C. Ideal for high-power systems, it ensures reliable performance with a built-in diode.

COLLECTOR

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

55 ns

2.3 V

FGHL75T65MQD by Onsemi

FGHL75T65MQD

Onsemi

FGHL75T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a nominal turn off time of 280ns and a max operating temperature of 175°C.

RC-IGBT

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

280 ns

92 ns

1.8 V

DGTD65T50S1PT by Diodes Incorporated

DGTD65T50S1PT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel;

100 A

650 V

SINGLE WITH BUILT-IN DIODE

6.2 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

375 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

399 ns

117 ns

2.4 V

FGH75T65UPD-F155 by Onsemi

FGH75T65UPD-F155

Onsemi

FGH75T65UPD-F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max IC of 150A. Ideal for POWER CONTROL applications, it has a package style of FLANGE MOUNT and can operate in temperatures ranging from -55 to 175 °C.

RC-IGBT

150 A

650 V

SINGLE WITH BUILT-IN DIODE

33 ns

7.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

56 ns

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

249 ns

197 ns

98 ns

87 ns

2.3 V