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15 A Insulated Gate Bipolar Transistors (IGBT) 29

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGD8NC60KT4 by STMicroelectronics

STGD8NC60KT4

STMicroelectronics

STGD8NC60KT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 15A IC, and 62W power dissipation. Suitable for surface mount applications, it operates up to 150 °C making it ideal for high-power electronic systems.

15 A

600 V

6.5 V

20 V

e3

1

150 Cel

N-CHANNEL

62 W

Insulated Gate BIP Transistors

YES

MATTE TIN

BSM10GD120DN2BOSA1 by Infineon Technologies

BSM10GD120DN2BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Elements: 6; Package Shape: RECTANGULAR;

ISOLATED

15 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X17

6

17

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

460 ns

105 ns

SIGC14T60SNCX1SA5 by Infineon Technologies

SIGC14T60SNCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Terminal Form: NO LEAD; Maximum Operating Temperature: 150 Cel;

15 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

315 ns

54 ns

FP15R12W2T4BOMA1 by Infineon Technologies

FP15R12W2T4BOMA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 15 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;

15 A

1200 V

20 V

1

175 Cel

NOT SPECIFIED

145 W

Insulated Gate BIP Transistors

NOT SPECIFIED

2.25 V

FP15R06W1E3BOMA1 by Infineon Technologies

FP15R06W1E3BOMA1

Infineon Technologies

FP15R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 23 terminals, and a max collector current of 15 A. It has a nominal turn-off time of 260 ns and a max operating temperature of 175°C. This complex transistor is commonly used in power control applications due to its silicon element material and isolated case connection.

ISOLATED

15 A

600 V

COMPLEX

R-XUFM-X23

7

23

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

260 ns

29 ns

SIGC14T60SNCX1SA4 by Infineon Technologies

SIGC14T60SNCX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Terminal Position: UPPER; Nominal Turn Off Time (toff): 315 ns;

15 A

600 V

SINGLE

S-XUUC-N2

1

2

UNSPECIFIED

SQUARE

UNCASED CHIP

N-CHANNEL

YES

NO LEAD

UPPER

POWER CONTROL

SILICON

315 ns

54 ns

MGB15N40CLT4 by Onsemi

MGB15N40CLT4

Onsemi

MGB15N40CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 22V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a surface-mount package with GULL WING terminals. The transistor has a nominal turn-off time of 20500ns and can handle a max collector current of 15A.

VOLTAGE CLAMPING

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.1 V

22 V

R-PSSO-G2

e0

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

136 W

Not Qualified

Insulated Gate BIP Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

20500 ns

6000 ns

STGB6NC60HD-1 by STMicroelectronics

STGB6NC60HD-1

STMicroelectronics

STGB6NC60HD-1 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600V, a nominal turn-off time of 222ns, and can handle up to 15A of current. This robust device operates efficiently in high-temperature environments up to 150 °C.

15 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

222 ns

17.3 ns

STGP8NC60KD by STMicroelectronics

STGP8NC60KD

STMicroelectronics

STGP8NC60KD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 15A IC, and 65W Ptot. It is used for power control applications due to its fast turn-off time of 242ns and built-in diode configuration. The package style is flange mount with a max operating temperature of 150°C.

15 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

65 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

242 ns

23 ns

STGP8NC60K by STMicroelectronics

STGP8NC60K

STMicroelectronics

STGP8NC60K from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600 V, a nominal turn-off time of 242 ns, and can handle up to 15 A of collector current. This robust device operates efficiently at temperatures up to 150 °C.

15 A

600 V

SINGLE

6.5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

65 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

242 ns

23 ns

NGB15N41CLT4 by Onsemi

NGB15N41CLT4

Onsemi

NGB15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns

NGD15N41CLT4 by Onsemi

NGD15N41CLT4

Onsemi

NGD15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns

NGP15N41CL by Onsemi

NGP15N41CL

Onsemi

NGP15N41CL by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Power Dissipation of 107W. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. With a rise time of 7000ns and fall time of 15000ns, this transistor offers reliable performance in automotive systems.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

TO-220AB

R-PSFM-T3

e0

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns

NGD18N40CLBT4 by Onsemi

NGD18N40CLBT4

Onsemi

NGD18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 15A, and power dissipation of 115W. The transistor operates at a max temperature of 175 °C with rise time of 7000ns and fall time of 15000ns.

COLLECTOR

15 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

115 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

13000 ns

5200 ns

MGP15N40CLG by Onsemi

MGP15N40CLG

Onsemi

MGP15N40CLG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max collector current of 15A. It features a built-in diode and resistor, making it ideal for automotive ignition applications. With a package style of FLANGE MOUNT and max power dissipation of 150W, this transistor operates at temperatures up to 175 °C.

VOLTAGE CLAMPING

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20000 ns

2.1 V

22 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

150 W

Not Qualified

6000 ns

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

20500 ns

6000 ns

NGP15N41CLG by Onsemi

NGP15N41CLG

Onsemi

NGP15N41CLG by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 440V, collector current of 15A, and power dissipation of 107W. With rise time of 7000ns and fall time of 15000ns, it operates at temperatures up to 175 °C.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns

STGD6NC60HT4 by STMicroelectronics

STGD6NC60HT4

STMicroelectronics

STGD6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 15A collector current, and operates at up to 150 °C. Ideal for applications requiring fast switching and high power dissipation.

15 A

600 V

SINGLE

5.75 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

222 ns

17.3 ns

STGB6NC60HDT4 by STMicroelectronics

STGB6NC60HDT4

STMicroelectronics

STGB6NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its fast turn-off time of 222ns and built-in diode configuration. Suitable for surface mount with a small outline package style.

15 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

R-PSSO-G2

e3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

222 ns

17.3 ns

STGB6NC60HT4 by STMicroelectronics

STGB6NC60HT4

STMicroelectronics

STGB6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 15A collector current, and fast switching times (toff: 222ns, ton: 17.3ns). Ideal for compact designs with its surface mount configuration.

15 A

600 V

SINGLE

5.75 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

222 ns

17.3 ns

FP10R12KE3BOMA1 by Infineon Technologies

FP10R12KE3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Position: UPPER; Package Body Material: UNSPECIFIED;

ISOLATED

15 A

1200 V

COMPLEX

R-XUFM-X23

7

23

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

481 ns

80 ns

SIGC08T60EX1SA1 by Infineon Technologies

SIGC08T60EX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Package Body Material: UNSPECIFIED;

15 A

600 V

SINGLE

R-XUUC-N2

1

2

175 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

FB10R06KL4GB1BOMA1 by Infineon Technologies

FB10R06KL4GB1BOMA1

Infineon Technologies

Infineon Technologies' FB10R06KL4GB1BOMA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 260ns nominal turn-off time. It has a complex configuration with 7 elements in a rectangular package style for flange mount applications.

ISOLATED

15 A

600 V

COMPLEX

R-XUFM-X22

7

22

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

SILICON

260 ns

58 ns

A1C15S12M3-F by STMicroelectronics

A1C15S12M3-F

STMicroelectronics

A1C15S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 1200V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a compact flange mount design, it excels in high-power systems.

ISOLATED

15 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X23

7

23

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

142.8 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

199 ns

134.5 ns

2.45 V

A1C15S12M3 by STMicroelectronics

A1C15S12M3

STMicroelectronics

STMicroelectronics A1C15S12M3 is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.45V, Nominal Turn Off Time of 199ns, and Max Collector Current of 15A. Ideal for high-power systems requiring efficient switching with a max operating temperature of 150°C.

ISOLATED

15 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X23

7

23

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

142.8 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

199 ns

134.5 ns

2.45 V

IKA10N65ET6XKSA1 by Infineon Technologies

IKA10N65ET6XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 15 A; Package Shape: RECTANGULAR;

ISOLATED

15 A

650 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

40 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

152 ns

48 ns

1.9 V

GT15J341,S4X by Toshiba

GT15J341,S4X

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 15 A; No. of Elements: 1;

ISOLATED

15 A

600 V

SINGLE WITH BUILT-IN DIODE

25 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

30 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

320 ns

180 ns

2 V

LGD15N41ATI by Littelfuse

LGD15N41ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 15 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

15 V

TO-252

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

107 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

15500 ns

17000 ns

9500 ns

LGB15N41ATI by Littelfuse

LGB15N41ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 15 A; Case Connection: COLLECTOR;

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

15 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

107 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

15500 ns

17000 ns

9500 ns

LGD18N40ATH by Littelfuse

LGD18N40ATH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A; Maximum Rise Time (tr): 7000 ns;

COLLECTOR

15 A

430 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

13000 ns

11000 ns

5200 ns