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DIP SRAM 53

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
TMS62828L-85NW by Texas Instruments

TMS62828L-85NW

Texas Instruments

TMS62828L-85NW by Texas Instruments is a 128Kx8 SRAM with 85ns access time, operating at 5V. It features 3-STATE output characteristics and consumes a max of 35mA supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

85 ns

COMMON

R-PDIP-T32

1048576 bit

STANDARD SRAM

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.00005 Amp

2 V

SRAMs

35 mA

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

DS1270W-100-IND by Dallas Semiconductor

DS1270W-100-IND

Dallas Semiconductor

DS1270W-100-IND by Dallas Semiconductor is a 2MX8 NON-VOLATILE SRAM with 16777216 bit memory density. It operates at 3.3V, has a max access time of 100ns, and is designed for INDUSTRIAL applications requiring reliable data storage in harsh environments.

100 ns

R-PDIP-T36

e0

16777216 bit

NON-VOLATILE SRAM

8

36

2097152 words

2M

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

3.3

Not Qualified

.0002 Amp

SRAMs

50 mA

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

23A1024-I/P by Microchip Technology

23A1024-I/P

Microchip Technology

Microchip Technology's 23A1024-I/P is a CMOS SRAM with 128KX8 organization, operating at 1.8/2V. It features synchronous operation, 20MHz clock frequency, and 131072 words capacity. Ideal for industrial applications requiring reliable memory storage in a compact IN-LINE package style.

20 MHz

COMMON/SEPARATE

R-PDIP-T8

e3

9.271 mm

1048576 bit

STANDARD SRAM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/2

Not Qualified

TS 16949

5.334 mm

.000004 Amp

1.7 V

SRAMs

10 mA

2.2 V

1.7 V

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23LCV512-I/P by Microchip Technology

23LCV512-I/P

Microchip Technology

23LCV512-I/P by Microchip Technology is a 64KX8 SRAM with 20 MHz clock frequency, operating at -40 to 85 °C. It features a serial interface, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed synchronous memory in a compact IN-LINE package.

20 MHz

COMMON

R-PDIP-T8

e3

9.271 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5.334 mm

.00001 Amp

2.5 V

10 mA

5.5 V

2.5 V

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

M74HC670B1R by STMicroelectronics

M74HC670B1R

STMicroelectronics

STMicroelectronics M74HC670B1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, CMOS technology, and 3-STATE output. Ideal for military applications due to its -55 to 125 °C temperature range and through-hole terminal form.

280 ns

R-PDIP-T16

e3

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP16,.3

RECTANGULAR

IN-LINE

PARALLEL

2/6

Not Qualified

5.1 mm

Other Memory ICs

6 V

2 V

4.5

NO

CMOS

MILITARY

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

X24C44P by Xicor

X24C44P

Xicor

X24C44P by Xicor is a 256-bit NON-VOLATILE SRAM with 16x16 organization and 375ns access time. Operating at 5V, it features synchronous mode and 3-STATE output, suitable for commercial applications requiring reliable memory storage in a compact IN-LINE package.

375 ns

EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES

R-PDIP-T8

e0

10.03 mm

256 bit

NON-VOLATILE SRAM

16

1

1

8

16 words

16

SYNCHRONOUS

70 Cel

0 Cel

16X16

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

4.07 mm

.00005 Amp

SRAMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

CY62256LL-70PC by Cypress Semiconductor

CY62256LL-70PC

Cypress Semiconductor

CY62256LL-70PC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast memory access in a rectangular package.

70 ns

COMMON

R-PDIP-T28

e0

36.322 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.000005 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z2M1Y-70PL1 by STMicroelectronics

M48Z2M1Y-70PL1

STMicroelectronics

M48Z2M1Y-70PL1 by STMicroelectronics is a 2MX8 SRAM with 16777216 bit memory density, operating at 5V. It features an access time of 70ns, output enable function, and operates in parallel mode. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

70 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

9.52 mm

.008 Amp

SRAMs

140 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

HT6256DC by Honeywell

HT6256DC

Honeywell

Honeywell's HT6256DC is a 32Kx8 SRAM with 3-STATE output, operating at -55 to 225°C. It features a parallel interface, 50ns access time, and MILITARY temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

50 ns

COMMON

R-CDIP-T28

e0

35.56 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

225 Cel

-55 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.445 mm

.00033 Amp

2.5 V

SRAMs

4 mA

5.5 V

4.5 V

5

NO

MOS

MILITARY

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

DS1225Y-150-IND by Dallas Semiconductor

DS1225Y-150-IND

Dallas Semiconductor

DS1225Y-150-IND by Dallas Semiconductor is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at 5V, has a max access time of 150ns, and is designed for industrial temperature grades. This rectangular package with 28 terminals in-line is ideal for applications requiring reliable data storage in harsh environments.

150 ns

R-PDIP-T28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1225AD-200-IND by Dallas Semiconductor

DS1225AD-200-IND

Dallas Semiconductor

DS1225AD-200-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and is designed for industrial applications. The package style is in-line with through-hole terminals and a temperature range of -40 to 85°C.

200 ns

R-PDIP-T28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1225AD-70-IND by Dallas Semiconductor

DS1225AD-70-IND

Dallas Semiconductor

DS1225AD-70-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536 bit memory density. It operates at 5V, has a max access time of 70ns, and is designed for industrial applications requiring non-volatile memory storage.

70 ns

R-PDIP-T28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

DS1230Y-70-IND by Dallas Semiconductor

DS1230Y-70-IND

Dallas Semiconductor

DS1230Y-70-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.

70 ns

10 YEARS DATA RETENTION PERIOD

R-PDIP-T28

e0

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1230Y-200-IND by Dallas Semiconductor

DS1230Y-200-IND

Dallas Semiconductor

DS1230Y-200-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 262144-bit memory density. Operating at 5V, it has a max access time of 200ns and can withstand industrial temperatures up to 85°C. Ideal for applications requiring reliable data storage in harsh environments.

200 ns

10 YEARS DATA RETENTION PERIOD

R-PDIP-T28

e0

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1245AB-120-IND by Dallas Semiconductor

DS1245AB-120-IND

Dallas Semiconductor

DS1245AB-120-IND by Dallas Semiconductor is a 128Kx8 Non-Volatile SRAM Module with 120ns access time. Operating at 5V, it has a memory density of 1048576 bits and industrial temperature grade. Suitable for applications requiring reliable data storage in harsh environments.

120 ns

R-PDIP-T32

e0

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.25 V

4.75 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1245Y-70-IND by Dallas Semiconductor

DS1245Y-70-IND

Dallas Semiconductor

DS1245Y-70-IND by Dallas Semiconductor is a 128Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.

70 ns

R-PDIP-T32

e0

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

M48Z128-70PM1 by STMicroelectronics

M48Z128-70PM1

STMicroelectronics

M48Z128-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 70ns access time, operating at 5V. It features asynchronous mode, 3-state output characteristics, and a rectangular package shape. Ideal for applications requiring reliable memory storage in commercial temperature environments.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z128Y-70PM1 by STMicroelectronics

M48Z128Y-70PM1

STMicroelectronics

M48Z128Y-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 3-STATE output characteristics. Operating at 5V, it has an access time of 70ns and standby current of 0.004A. Ideal for commercial applications requiring reliable memory storage in a compact MICROELECTRONIC ASSEMBLY package.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

225

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z128Y-85PM1 by STMicroelectronics

M48Z128Y-85PM1

STMicroelectronics

STMicroelectronics' M48Z128Y-85PM1 is a 128Kx8 non-volatile SRAM module with 3-STATE output, operating at 5V. With an access time of 85ns, it's ideal for applications requiring fast and reliable data storage in commercial-grade environments. The rectangular package style and asynchronous operation make it suitable for various microelectronic assemblies.

85 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z512AY-70PM1 by STMicroelectronics

M48Z512AY-70PM1

STMicroelectronics

M48Z512AY-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with asynchronous operation and 3-STATE output. It operates at 5V, has a max access time of 70ns, and features non-volatile memory technology. This rectangular package with 32 terminals is ideal for commercial applications requiring reliable memory storage.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.52 mm

.005 Amp

SRAMs

115 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512A-70PM1 by STMicroelectronics

M48Z512A-70PM1

STMicroelectronics

M48Z512A-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with 70ns access time and operates at 5V. It features a rectangular package shape, asynchronous mode, and 3-state output characteristics. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.52 mm

.005 Amp

SRAMs

115 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-150PC1 by STMicroelectronics

M48Z02-150PC1

STMicroelectronics

M48Z02-150PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features asynchronous mode and common I/O type, suitable for commercial applications. With a memory density of 16384 bit, this CMOS technology-based IC offers parallel operation in a rectangular package style.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.75 V

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-200PC1 by STMicroelectronics

M48Z02-200PC1

STMicroelectronics

M48Z02-200PC1 by STMicroelectronics is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 200ns. Ideal for applications requiring reliable data storage in commercial temperature environments.

200 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T24

e3

34.545 mm

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-70PC1 by STMicroelectronics

M48Z02-70PC1

STMicroelectronics

M48Z02-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 5V supply voltage, operating in asynchronous mode. It features 3-STATE output characteristics and offers 16384 bits memory density. Ideal for applications requiring common I/O type and parallel operation at temperatures up to 70°C.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.75 V

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z12-200PC1 by STMicroelectronics

M48Z12-200PC1

STMicroelectronics

STMicroelectronics M48Z12-200PC1 is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It has a max access time of 200ns and standby current of 0.003Amp. Ideal for applications requiring reliable memory storage in commercial temperature environments.

200 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T24

e3

34.545 mm

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z12-70PC1 by STMicroelectronics

M48Z12-70PC1

STMicroelectronics

M48Z12-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features a rectangular package style, asynchronous mode, and common I/O type. Ideal for applications requiring standard SRAM memory technology in commercial temperature grades.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.5 V

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

LH5164A-10L by Sharp Corporation

LH5164A-10L

Sharp Corporation

LH5164A-10L by Sharp Corp is an 8Kx8 SRAM with 100ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for commercial applications requiring fast memory access in a compact IN-LINE package.

100 ns

R-PDIP-T28

36 mm

65536 bit

STANDARD SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

-10 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

Not Qualified

5.2 mm

2 V

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z18-100PC1 by STMicroelectronics

M48Z18-100PC1

STMicroelectronics

M48Z18-100PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 100ns. This rectangular package SRAM is commonly used in commercial applications requiring reliable, low-power memory solutions.

100 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM MODULE

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z35-70PC1 by STMicroelectronics

M48Z35-70PC1

STMicroelectronics

M48Z35-70PC1 by STMicroelectronics is a 32Kx8 SRAM with 70ns access time and operates at 5V. It features a rectangular package style, asynchronous mode, and 3-STATE output characteristics. Ideal for commercial applications requiring reliable memory storage in devices with parallel data processing needs.

70 ns

R-PDIP-T28

e3

39.625 mm

262144 bit

SRAM STD

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58-70PC1 by STMicroelectronics

M48Z58-70PC1

STMicroelectronics

M48Z58-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. Operating at 5V, it features a max access time of 70ns and output enable function. This CMOS technology-based IC is ideal for applications requiring reliable data storage in commercial temperature environments.

70 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58Y-70PC1 by STMicroelectronics

M48Z58Y-70PC1

STMicroelectronics

M48Z58Y-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 70ns. This rectangular package SRAM is commonly used in applications requiring reliable data storage and retrieval in commercial temperature environments.

70 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

DS1220Y-100-IND by Dallas Semiconductor

DS1220Y-100-IND

Dallas Semiconductor

DS1220Y-100-IND by Dallas Semiconductor is a 2Kx8 Non-Volatile SRAM module with 100ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable memory storage in harsh environments.

100 ns

R-PDIP-T24

e0

16384 bit

NON-VOLATILE SRAM MODULE

8

1

24

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.004 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1250Y-70-IND by Dallas Semiconductor

DS1250Y-70-IND

Dallas Semiconductor

DS1250Y-70-IND by Dallas Semiconductor is a 512Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and industrial temperature grade. Ideal for applications requiring non-volatile memory storage in industrial environments.

70 ns

10 YEAR DATA RETENTION PERIOD

R-XDIP-T32

e0

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

YES

UNSPECIFIED

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

M48Z129V-85PM1 by STMicroelectronics

M48Z129V-85PM1

STMicroelectronics

M48Z129V-85PM1 by STMicroelectronics is a 128Kx8 SRAM module with asynchronous operation, 3.3V supply, and 85ns access time. It is ideal for applications requiring non-volatile memory storage in commercial temperature environments.

85 ns

R-PDIP-T32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512AV-85PM1 by STMicroelectronics

M48Z512AV-85PM1

STMicroelectronics

STMicroelectronics M48Z512AV-85PM1 is a 512Kx8 non-volatile SRAM module with 85ns access time, operating at 3.3V. It has a rectangular package shape, through-hole terminal form, and is suitable for commercial temperature grade applications.

85 ns

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

23A640-I/P by Microchip Technology

23A640-I/P

Microchip Technology

23A640-I/P by Microchip Technology is an 8Kx8 SRAM with 16 MHz clock frequency, operating at -40 to 85 °C. It features a CMOS technology, serial interface, and 65536 bit memory density. Ideal for industrial applications requiring reliable synchronous memory solutions.

16 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8

Not Qualified

TS 16949

5.334 mm

.000001 Amp

1.5 V

SRAMs

10 mA

1.95 V

1.5 V

1.8

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23K256-I/P by Microchip Technology

23K256-I/P

Microchip Technology

23K256-I/P by Microchip Technology is a 32KX8 SRAM with a max clock frequency of 20 MHz. It operates at a nominal voltage of 3V and has a memory density of 262144 bit. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

20 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

262144 bit

STANDARD SRAM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

Not Qualified

5.334 mm

.000004 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

BQ4010LYMA-70N by Texas Instruments

BQ4010LYMA-70N

Texas Instruments

BQ4010LYMA-70N by Texas Instruments is an 8Kx8 SRAM with 3.3V supply, operating asynchronously at -40 to 85°C. It features a parallel interface, 70ns access time, and industrial temperature grade. Ideal for non-volatile memory applications in microelectronic assemblies due to its compact size and low power consumption of 30mA max.

70 ns

R-XDMA-T28

37.72 mm

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

30 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

18.415 mm

BQ4013LYMA-70N by Texas Instruments

BQ4013LYMA-70N

Texas Instruments

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

70 ns

R-PDMA-P32

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

BQ4015LYMA-70N by Texas Instruments

BQ4015LYMA-70N

Texas Instruments

BQ4015LYMA-70N by Texas Instruments is a 512Kx8 SRAM module with 70ns access time, operating at 3.3V and 85°C max temp. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular plastic package with 32 terminals.

70 ns

R-PDMA-P32

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

5

Not Qualified

.001 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

BQ4011LYMA-70N by Texas Instruments

BQ4011LYMA-70N

Texas Instruments

BQ4011LYMA-70N by Texas Instruments is a 32Kx8 SRAM module with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 70ns access time, and 262144-bit memory density. Ideal for industrial applications requiring non-volatile memory in a compact MICROELECTRONIC ASSEMBLY package.

70 ns

R-PDMA-P28

37.72 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

30 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

18.415 mm

LH5116-10F by Sharp Corporation

LH5116-10F

Sharp Corporation

The Sharp LH5116-10F is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it offers a max access time of 100ns. Ideal for commercial applications, this CMOS technology-based IC has a rectangular package shape and operates in asynchronous mode.

100 ns

R-PDIP-T24

31 mm

16384 bit

STANDARD SRAM

8

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

Not Qualified

5.3 mm

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

M48Z512BV-85PM1 by STMicroelectronics

M48Z512BV-85PM1

STMicroelectronics

M48Z512BV-85PM1 by STMicroelectronics is a 512Kx8 non-volatile SRAM module with asynchronous operation and a max access time of 85 ns. It operates at 3.3V, supports dual terminals, and functions effectively in commercial applications up to 70 °C. Ideal for data storage in embedded systems.

85 ns

R-PDMA-P32

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

74HC670N,652 by NXP Semiconductors

74HC670N,652

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;

59 ns

R-PDIP-T16

e4

21.6 mm

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP16,.3

RECTANGULAR

IN-LINE

PARALLEL

2/6

Not Qualified

4.7 mm

Other Memory ICs

6 V

2 V

5

NO

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

PCF8570P/F5,112 by NXP Semiconductors

PCF8570P/F5,112

NXP Semiconductors

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e4;

2-WIRE I2C SERIAL INTERFACE

.1 MHz

COMMON

R-PDIP-T8

e4

9.5 mm

2048 bit

STANDARD SRAM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

.0000004 Amp

1 V

SRAMs

.2 mA

6 V

2.5 V

5

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

M48Z35AV-10PC1 by STMicroelectronics

M48Z35AV-10PC1

STMicroelectronics

M48Z35AV-10PC1 by STMicroelectronics is a 32Kx8 non-volatile SRAM module with CMOS technology. It operates at 3.3V, has a max access time of 100ns, and consumes up to 50mA of supply current. This rectangular package with 28 terminals is ideal for applications requiring reliable data storage in commercial temperature environments.

100 ns

R-PDIP-T28

e3

39.625 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

STK20C04-WF25I by Simtek

STK20C04-WF25I

Simtek

Simtek's STK20C04-WF25I is a 512x8 non-volatile SRAM with 4096-bit memory density. Operating at 5V, it has an access time of 25ns and consumes a max of 90mA. Ideal for industrial applications requiring reliable asynchronous memory solutions in a compact rectangular package.

25 ns

R-PDIP-T28

e3

36.83 mm

4096 bit

NON-VOLATILE SRAM

8

1

28

512 words

512

ASYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

260

5

Not Qualified

4.57 mm

.00075 Amp

SRAMs

90 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z2M1V-85PL1 by STMicroelectronics

M48Z2M1V-85PL1

STMicroelectronics

M48Z2M1V-85PL1 by STMicroelectronics is a 2Mx8 non-volatile SRAM with a max access time of 85 ns. It operates asynchronously at a supply voltage of 3.3V and supports temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention, it features a compact in-line package with 36 terminals.

85 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.001 Amp

SRAMs

70 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm