Loading...

DIP SRAM 53

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
23K640-E/P by Microchip Technology

23K640-E/P

Microchip Technology

23K640-E/P by Microchip Technology is a CMOS SRAM with 8Kx8 organization and 65536-bit memory density. It operates at a max clock frequency of 16 MHz and has a nominal voltage of 3V. This memory IC is commonly used in automotive applications due to its TS16949 screening level and temperature grade.

16 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

Not Qualified

TS 16949

5.334 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

CY62256LL-70PXC by Cypress Semiconductor

CY62256LL-70PXC

Cypress Semiconductor

CY62256LL-70PXC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features a 3-STATE output and common I/O type, suitable for commercial applications requiring fast and reliable memory storage in a rectangular package style.

70 ns

COMMON

R-PDIP-T28

e4

36.322 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

260

5

Not Qualified

5.08 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

40

15.24 mm

DS1220AD-200IND by Maxim Integrated

DS1220AD-200IND

Maxim Integrated

DS1220AD-200IND by Maxim Integrated is a 2Kx8 SRAM with 5V supply, operating in asynchronous mode. It has a max access time of 200ns and industrial temperature grade. Ideal for applications requiring fast and reliable non-volatile memory storage in harsh environments.

200 ns

R-XDMA-P24

e0

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

UNSPECIFIED

DIP

DIP24,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

260

5

Not Qualified

.005 Amp

SRAMs

15 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

2.54 mm

DUAL

40

DS1225Y-200IND by Maxim Integrated

DS1225Y-200IND

Maxim Integrated

DS1225Y-200IND by Maxim Integrated is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and consumes up to 85mA. Ideal for industrial applications requiring non-volatile memory storage in microelectronic assemblies.

200 ns

10 YEAR DATA RETENTION

R-XDMA-P28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

2.54 mm

DUAL

DS1230W-100IND by Maxim Integrated

DS1230W-100IND

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 256KX8;

100 ns

10 YEAR DATA RETENTION

R-PDIP-T28

e0

38.225 mm

2097152 bit

NON-VOLATILE SRAM MODULE

8

1

28

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

10.668 mm

.00015 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm