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52 SRAM 49

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
7130LA100JI8 by Integrated Device Technology

7130LA100JI8

Integrated Device Technology

7130LA100JI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it features an access time of 100ns and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.

100 ns

COMMON

S-PQCC-J52

e0

8192 bit

MULTI-PORT SRAM

8

3

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

71321LA55JI8 by Integrated Device Technology

71321LA55JI8

Integrated Device Technology

71321LA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at -40 to 85°C. It features a 5V supply voltage, 52 terminals in a chip carrier package, and supports asynchronous operation. Ideal for industrial applications requiring fast memory access and common I/O type.

55 ns

COMMON

S-PQCC-J52

e0

16384 bit

MULTI-PORT SRAM

8

3

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

71342SA35JI8 by Integrated Device Technology

71342SA35JI8

Integrated Device Technology

71342SA35JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports asynchronous operation. Ideal for industrial applications requiring fast memory access and common I/O type.

35 ns

COMMON

S-PQCC-J52

e0

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.015 Amp

4.5 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

7134LA35JI8 by Integrated Device Technology

7134LA35JI8

Integrated Device Technology

7134LA35JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

COMMON

S-PQCC-J52

e0

32768 bit

MULTI-PORT SRAM

8

3

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

250 mA

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

CY7C131-55JXCT by Cypress Semiconductor

CY7C131-55JXCT

Cypress Semiconductor

CY7C131-55JXCT by Cypress Semiconductor is a 1Kx8 SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C131E-15NXI by Cypress Semiconductor

CY7C131E-15NXI

Cypress Semiconductor

CY7C131E-15NXI by Cypress Semiconductor is a 1Kx8 SRAM with 15ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact square package.

15 ns

COMMON

S-PQFP-G52

e3

10 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

260

5

Not Qualified

2.5 mm

.015 Amp

4.5 V

SRAMs

305 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10 mm

CY7C131E-55JXC by Cypress Semiconductor

CY7C131E-55JXC

Cypress Semiconductor

CY7C131E-55JXC by Cypress Semiconductor is a 1Kx8 SRAM chip with 55ns access time, operating at 5V. It features asynchronous mode, 3-state output, and common I/O type. Ideal for commercial applications requiring fast memory access in a compact square chip carrier package.

55 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C136E-25JXC by Cypress Semiconductor

CY7C136E-25JXC

Cypress Semiconductor

CY7C136E-25JXC by Cypress Semiconductor is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

19.1262 mm

CY7C136E-25NXC by Cypress Semiconductor

CY7C136E-25NXC

Cypress Semiconductor

CY7C136E-25NXC by Cypress Semiconductor is a 2Kx8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G52

e3

10 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

5

Not Qualified

2.5 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10 mm

CY7C131-25JC by Cypress Semiconductor

CY7C131-25JC

Cypress Semiconductor

CY7C131-25JC by Cypress Semiconductor is a 1Kx8 SRAM with 25ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast memory access in commercial-grade environments.

25 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e0

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

YES

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

170 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

19.1262 mm

71321SA55JI8 by Integrated Device Technology

71321SA55JI8

Integrated Device Technology

71321SA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures. Ideal for applications requiring fast data retrieval in harsh environments.

55 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.03 Amp

4.5 V

SRAMs

190 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20J8 by Integrated Device Technology

71342LA20J8

Integrated Device Technology

71342LA20J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 20ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25J8 by Integrated Device Technology

71342LA25J8

Integrated Device Technology

71342LA25J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time, operating at 5V. It features a CMOS technology, 52 terminals in a square chip carrier package, and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25JI8 by Integrated Device Technology

71342LA25JI8

Integrated Device Technology

71342LA25JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures up to 85°C. Ideal for applications requiring fast and reliable parallel memory storage in harsh environments.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA35J8 by Integrated Device Technology

71342LA35J8

Integrated Device Technology

71342LA35J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA45J8 by Integrated Device Technology

71342LA45J8

Integrated Device Technology

71342LA45J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 45ns access time, operating at 5V. It features a square chip carrier package style and offers asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55J8 by Integrated Device Technology

71342LA55J8

Integrated Device Technology

71342LA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and offers parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA70J8 by Integrated Device Technology

71342LA70J8

Integrated Device Technology

71342LA70J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 70ns and features a package style of CHIP CARRIER. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

70 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20J8 by Integrated Device Technology

71342SA20J8

Integrated Device Technology

71342SA20J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words, operating at 5V. It features an asynchronous mode, 3-STATE output characteristics, and a max access time of 20ns. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA25J8 by Integrated Device Technology

71342SA25J8

Integrated Device Technology

71342SA25J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and offers asynchronous operation with common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA35J8 by Integrated Device Technology

71342SA35J8

Integrated Device Technology

71342SA35J8 by Integrated Device Technology is a 4Kx8 multi-port SRAM chip with 35ns access time and operates at a max supply voltage of 5.5V. It features a common I/O type, asynchronous operation mode, and offers 3-state output characteristics. Ideal for applications requiring fast memory access in commercial-grade temperature environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA45J8 by Integrated Device Technology

71342SA45J8

Integrated Device Technology

71342SA45J8 by Integrated Device Technology is a 4Kx8 SRAM chip with asynchronous operation and common I/O type. It operates at 5V, has a max access time of 45ns, and is ideal for applications requiring fast memory access such as networking equipment or industrial automation systems.

45 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55J8 by Integrated Device Technology

71342SA55J8

Integrated Device Technology

71342SA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade devices.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA70J8 by Integrated Device Technology

71342SA70J8

Integrated Device Technology

71342SA70J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 70ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

70 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7130LA25JI8 by Integrated Device Technology

7130LA25JI8

Integrated Device Technology

7130LA25JI8 by Integrated Device Technology is a 1KX8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7132LA25JI8 by Integrated Device Technology

7132LA25JI8

Integrated Device Technology

7132LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a chip carrier package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71321LA55JI by Integrated Device Technology

71321LA55JI

Integrated Device Technology

71321LA55JI by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. Ideal for industrial applications, it features a square package shape, CMOS technology, and asynchronous operation mode.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

140 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20J by Integrated Device Technology

71342LA20J

Integrated Device Technology

71342LA20J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25JI by Integrated Device Technology

71342LA25JI

Integrated Device Technology

71342LA25JI by Integrated Device Technology is a 4Kx8 multi-port SRAM chip with 3-STATE output, operating at 5V. It features an access time of 25ns and operates in industrial temperature range (-40 to 85°C). Suitable for applications requiring fast and reliable memory storage in various electronic devices.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25J by Integrated Device Technology

71342LA25J

Integrated Device Technology

71342LA25J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 8-bit memory width. Operating at 5V, it offers a max access time of 25ns and features an asynchronous mode suitable for commercial applications. With a package style of CHIP CARRIER, this SRAM has a terminal pitch of 1.27mm and is designed for surface mount usage.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA35J by Integrated Device Technology

71342LA35J

Integrated Device Technology

71342LA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA45J by Integrated Device Technology

71342LA45J

Integrated Device Technology

71342LA45J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 45 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55J by Integrated Device Technology

71342LA55J

Integrated Device Technology

71342LA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can operate in asynchronous mode. Ideal for applications requiring fast memory access and common I/O type in commercial temperature environments.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA70J by Integrated Device Technology

71342LA70J

Integrated Device Technology

71342LA70J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 70ns and features a temperature grade of COMMERCIAL. Ideal for applications requiring fast and reliable data storage in commercial-grade electronic devices.

70 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20J by Integrated Device Technology

71342SA20J

Integrated Device Technology

71342SA20J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 20ns access time, operating at 5V. It features a square plastic/epoxy package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA25J by Integrated Device Technology

71342SA25J

Integrated Device Technology

71342SA25J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time and operates at 5V. It features a square chip carrier package, CMOS technology, and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA35J by Integrated Device Technology

71342SA35J

Integrated Device Technology

71342SA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 35ns access time and operates at 5V. It features a square chip carrier package, suitable for applications requiring fast and reliable memory storage in commercial-grade devices. With common I/O type and 3-STATE output characteristics, it offers parallel data transfer capabilities for various electronic systems.

35 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA45J by Integrated Device Technology

71342SA45J

Integrated Device Technology

71342SA45J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 45ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55J by Integrated Device Technology

71342SA55J

Integrated Device Technology

71342SA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA70J by Integrated Device Technology

71342SA70J

Integrated Device Technology

71342SA70J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 4096 words, operating at 5V. It features a max access time of 70ns and offers a memory density of 32768 bits. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

70 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C131-55JXC by Cypress Semiconductor

CY7C131-55JXC

Cypress Semiconductor

CY7C131-55JXC by Cypress Semiconductor is a 1Kx8 SRAM chip with 55ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-STATE output characteristics. Ideal for commercial applications requiring fast memory access in a compact square chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C131-55JXI by Cypress Semiconductor

CY7C131-55JXI

Cypress Semiconductor

CY7C131-55JXI by Cypress Semiconductor is a 1Kx8 SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C135-15JXC by Cypress Semiconductor

CY7C135-15JXC

Cypress Semiconductor

CY7C135-15JXC by Cypress Semiconductor is a 4Kx8 SRAM with 4096 words, 8-bit memory width, and 15ns access time. It operates at 5V, has a max supply voltage of 5.5V, and is ideal for commercial applications requiring fast and reliable parallel memory storage.

15 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C135-25JXC by Cypress Semiconductor

CY7C135-25JXC

Cypress Semiconductor

CY7C135-25JXC by Cypress Semiconductor is a 4Kx8 SRAM chip with 25ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast memory access in commercial-grade devices.

25 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

180 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C136-55NXC by Cypress Semiconductor

CY7C136-55NXC

Cypress Semiconductor

MULTI-PORT SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: QFP; Package Shape: SQUARE; Maximum Standby Current: .015 Amp;

55 ns

COMMON

S-PQFP-G52

e3

10 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

260

5

Not Qualified

2.45 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

QUAD

20

10 mm

71421LA55JI8 by Integrated Device Technology

71421LA55JI8

Integrated Device Technology

71421LA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for industrial applications requiring fast memory access and common I/O type.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

140 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7142LA25JI8 by Integrated Device Technology

7142LA25JI8

Integrated Device Technology

7142LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in a compact form factor.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C131-55JXIT by Cypress Semiconductor

CY7C131-55JXIT

Cypress Semiconductor

CY7C131-55JXIT by Cypress Semiconductor is a 1Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

YES

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm