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BGA Flash Memory 71

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
PC28F640P33TF60A by Micron Technology

PC28F640P33TF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel;

60 ns

TOP

YES

YES

NO

S-PBGA-B64

67108864 bit

FLASH

16

4,63

64

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8

PARALLEL

2.5/3.3

Not Qualified

16K,64K

.002 Amp

Flash Memories

28 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

NOR TYPE

RC48F4400P0VB00A by Micron Technology

RC48F4400P0VB00A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Type: NOR TYPE;

85 ns

BOTTOM

YES

YES

NO

S-PBGA-B64

536870912 bit

FLASH

16

8, 510

64

33554432 words

32M

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

4

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000005 Amp

Flash Memories

51 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

NOR TYPE

PC28F320J3F75E by Micron Technology

PC28F320J3F75E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Sector Size (Words): 128K;

75 ns

8

YES

YES

NO

S-PBGA-B64

33554432 bit

FLASH

16

32

64

2097152 words

2M

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

4/8

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

80 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

PC28F128J3F75D by Micron Technology

PC28F128J3F75D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Maximum Supply Current: 80 mA;

75 ns

8

YES

YES

NO

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

4/8

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

80 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

RC28F640P30TF65A by Micron Technology

RC28F640P30TF65A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Sector Size (Words): 16K,64K;

65 ns

TOP

YES

YES

NO

S-PBGA-B64

67108864 bit

FLASH

16

4,63

64

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

NOR TYPE

PC28F128P30BF65E by Micron Technology

PC28F128P30BF65E

Micron Technology

Micron Technology's PC28F128P30BF65E is an 8MX16 NOR flash memory with 64 terminals, operating at -40 to 85°C. It features a 16K/64K sector size and 1.8V power supply, suitable for industrial applications requiring fast access times of 65ns and low standby current of 0.000055A.

65 ns

BOTTOM

YES

YES

NO

S-PBGA-B64

134217728 bit

FLASH

16

4,127

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

NOR TYPE

MT29F16G08ABCCBH1-10:C by Micron Technology

MT29F16G08ABCCBH1-10:C

Micron Technology

MT29F16G08ABCCBH1-10:C by Micron Technology is a 2GX8 SLC NAND flash memory with 4K sectors and 2147483648 words. It operates at 3/3.3V, has a package style of GRID ARRAY, and uses parallel interface. Ideal for commercial applications requiring fast access time and low standby current.

20 ns

YES

NO

R-PBGA-B100

17179869184 bit

FLASH

8

4K

100

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

3/3.3

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABCBBH1-12:B by Micron Technology

MT29F8G08ABCBBH1-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

20 ns

YES

NO

R-PBGA-B100

8589934592 bit

FLASH

8

2K

100

1073741824 words

1G

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

1.8

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABCBBH1-12IT:B by Micron Technology

MT29F8G08ABCBBH1-12IT:B

Micron Technology

Micron Technology's MT29F8G08ABCBBH1-12IT:B is a 1.8V SLC NAND flash memory with 1GX8 organization, 4K page size, and 512K sector size. It operates in industrial temperature range (-40 to 85 °C) with parallel interface and 100 terminals on a grid array package. Ideal for applications requiring high-density memory storage and fast access times.

20 ns

YES

NO

R-PBGA-B100

8589934592 bit

FLASH

8

2K

100

1073741824 words

1G

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

1.8

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F32G08ABCABH1-10:A by Micron Technology

MT29F32G08ABCABH1-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

20 ns

YES

NO

R-PBGA-B100

34359738368 bit

FLASH

8

4K

100

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10:A by Micron Technology

MT29F64G08AECABH1-10:A

Micron Technology

MT29F64G08AECABH1-10:A by Micron Technology is a 8GX8 SLC NAND flash memory with 8K sectors. It operates at temperatures from 0 to 70 °C and has a max access time of 20 ns. Suitable for commercial applications, it features a package style of GRID ARRAY and uses parallel interface with 100 terminals.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10IT:A by Micron Technology

MT29F64G08AECABH1-10IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Command User Interface: YES;

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10:A by Micron Technology

MT29F256G08AUCABH3-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

70 Cel

0 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10IT:A by Micron Technology

MT29F256G08AUCABH3-10IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA100,10X17,40;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10:A by Micron Technology

MT29F128G08AKCABH2-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10:A by Micron Technology

MT29F128G08AMCABH2-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 16GX8;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10IT:A by Micron Technology

MT29F128G08AMCABH2-10IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AKCCBH2-10Z:C by Micron Technology

MT29F64G08AKCCBH2-10Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

16K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

3/3.3

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F32G08ABCABH1-10Z:A by Micron Technology

MT29F32G08ABCABH1-10Z:A

Micron Technology

Micron Technology's MT29F32G08ABCABH1-10Z:A is a 4GX8 SLC NAND flash memory with 4294967296 words capacity. It operates at temperatures from 0 to 70°C, with a max access time of 20 ns. Ideal for commercial applications requiring high memory density and low standby current consumption.

20 ns

YES

NO

R-PBGA-B100

34359738368 bit

FLASH

8

4K

100

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10ITZ:A by Micron Technology

MT29F64G08AECABH1-10ITZ:A

Micron Technology

MT29F64G08AECABH1-10ITZ:A by Micron Technology is an 8GX8 SLC NAND flash memory with 8K sectors. Operating at -40 to 85 °C, it has a memory density of 68719476736 bit and max access time of 20 ns. Ideal for industrial applications requiring fast, reliable data storage with low standby current consumption.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10Z:A by Micron Technology

MT29F64G08AECABH1-10Z:A

Micron Technology

MT29F64G08AECABH1-10Z:A by Micron Technology is a 8GX8 SLC NAND flash memory with 8K sectors and 1M word sector size. Operating at 0-70 °C, it has a max access time of 20 ns and consumes up to 50 mA current. Ideal for commercial applications requiring high memory density and fast data access.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10Z:A by Micron Technology

MT29F128G08AKCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Page Size (words): 8K;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10ITZ:A by Micron Technology

MT29F128G08AKCABH2-10ITZ:A

Micron Technology

Micron Technology's MT29F128G08AKCABH2-10ITZ:A is a 16GX8 SLC NAND flash memory with 1M sector size and 8K page size. It operates at industrial temperature grade, with parallel interface and 100 terminals in a grid array package. Ideal for applications requiring high-speed data storage and retrieval.

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10ITZ:A by Micron Technology

MT29F128G08AMCABH2-10ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.8,3/3.3;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

260

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10Z:A by Micron Technology

MT29F128G08AMCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10ITZ:A by Micron Technology

MT29F256G08AUCABH3-10ITZ:A

Micron Technology

Micron Technology's MT29F256G08AUCABH3-10ITZ:A is a SLC NAND flash memory with 32K sectors, 8K page size, and 1M sector size. It operates at temperatures from -40 to 85°C and has a max access time of 20 ns. Ideal for industrial applications requiring high-density memory with low standby current.

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10Z:A by Micron Technology

MT29F256G08AUCABH3-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

70 Cel

0 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

N25Q064A13E14D0E by Micron Technology

N25Q064A13E14D0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

67108864 bit

FLASH

8

24

8388608 words

8M

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

BGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY

SERIAL

3/3.3

Not Qualified

SPI

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

HARDWARE/SOFTWARE

M29W128GL70ZA6DE by Micron Technology

M29W128GL70ZA6DE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSH70ZA6E by Micron Technology

M29W128GSH70ZA6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; No. of Words Code: 8M;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSH70ZS6E by Micron Technology

M29W128GSH70ZS6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; No. of Words: 8388608 words;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSL70ZA6E by Micron Technology

M29W128GSL70ZA6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Organization: 8MX16;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSL70ZS6E by Micron Technology

M29W128GSL70ZS6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Package Equivalence Code: BGA64,8X8,40;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

MT29F8G08ADBFAH4-AAT:FTR by Micron Technology

MT29F8G08ADBFAH4-AAT:FTR

Micron Technology

Micron Technology's MT29F8G08ADBFAH4-AAT:FTR is a SLC NAND flash memory with 1GX8 organization, 8-bit memory width, and 8589934592 bit density. It operates in ASYNCHRONOUS mode with a temperature range of -40 to 105 °C. Ideal for applications requiring high-speed data storage in compact devices.

X-PBGA-B

8589934592 bit

FLASH

8

1

1073741824 words

1G

ASYNCHRONOUS

105 Cel

-40 Cel

1GX8

UNSPECIFIED

BGA

UNSPECIFIED

GRID ARRAY

NOT SPECIFIED

YES

CMOS

BALL

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

MTFC8GLWDM-3LAATZ by Micron Technology

MTFC8GLWDM-3LAATZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

11.5 mm

THGBMHG7C2LBAIL by Toshiba

THGBMHG7C2LBAIL

Toshiba

FLASH; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B153

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

2.7

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG8C4LBAIR by Toshiba

THGBMHG8C4LBAIR

Toshiba

FLASH; Temperature Grade: OTHER; No. of Terminals: 169; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B169

274877906944 bit

FLASH

8

1

169

34359738368 words

32G

ASYNCHRONOUS

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

2.7

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

BOTTOM

MT29F4G16ABADAH4-AIT:D by Micron Technology

MT29F4G16ABADAH4-AIT:D

Micron Technology

Micron's MT29F4G16ABADAH4-AIT:D is a 256MX16 SLC NAND flash memory with 3.3V programming voltage. Operating in industrial temperatures (-40 to 85°C), it offers 4294967296-bit memory density for parallel applications. The package features a grid array style with bottom terminal position, suitable for surface mount designs.

R-PBGA-B63

e1

4294967296 bit

FLASH

16

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

BOTTOM

30

SLC NAND TYPE

SST26WF016BAT-104I/CS by Microchip Technology

SST26WF016BAT-104I/CS

Microchip Technology

SST26WF016BAT-104I/CS by Microchip: 16MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles endurance and 1.8V programming voltage.

104 MHz

100

100000 Write/Erase Cycles

R-PBGA-B8

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

BGA

BGA8,3X5,23

RECTANGULAR

GRID ARRAY

SERIAL

1.8

TS 16949

.64 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.886 mm

BOTTOM

NOR TYPE

HARDWARE/SOFTWARE

THGBMJG6C1LBAIL by Kioxia Holdings

THGBMJG6C1LBAIL

Kioxia Holdings

Kioxia Holdings' THGBMJG6C1LBAIL is an 8GX8 flash memory IC with 68719476736-bit memory density. It operates b/w -25°C to 85°C, with a voltage range of 2.7V to 3.6V. This rectangular GRID ARRAY package is surface-mountable and ideal for applications requiring high-speed data storage in compact devices.

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

MTFC16GAPALGT-AIT by Micron Technology

MTFC16GAPALGT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 16GX8;

200 MHz

5

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC16GAPALHT-AIT by Micron Technology

MTFC16GAPALHT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

200 MHz

5

R-PBGA-B100

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

14 mm

THGBMJG8C2LBAIL by Kioxia Holdings

THGBMJG8C2LBAIL

Kioxia Holdings

Kioxia Holdings' THGBMJG8C2LBAIL is a Flash Memory with 32GX8 organization, 274877906944 bit memory density, and CMOS technology. It features a package style of GRID ARRAY, operates b/w -25 to 85 °C, and has a terminal pitch of 0.5 mm. Ideal for applications requiring high-speed data storage in compact devices.

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

THGBMJG8C4LBAU8 by Kioxia Holdings

THGBMJG8C4LBAU8

Kioxia Holdings

Kioxia Holdings THGBMJG8C4LBAU8 is a 32GX8 flash memory with 274877906944 bit density. It operates b/w -40 to 105 °C, suitable for industrial applications. With a terminal pitch of 0.5 mm and package style GRID ARRAY, it offers high-speed data storage in compact devices.

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

11 mm

S25HS02GTFABHV153 by Infineon Technologies

S25HS02GTFABHV153

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS; Maximum Clock Frequency (fCLK): 166 MHz;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

SPI

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HL02GTFGBHB043 by Infineon Technologies

S26HL02GTFGBHB043

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B24; Maximum Supply Voltage (Vsup): 3.6 V;

133 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

3

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HL02GTFGBHB050 by Infineon Technologies

S26HL02GTFGBHB050

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Maximum Operating Temperature: 105 Cel; Type: NOR TYPE;

133 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

3

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HS02GTFPBHM053 by Infineon Technologies

S26HS02GTFPBHM053

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Type: NOR TYPE; Screening Level: AEC-Q100;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

125 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE