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RECTANGULAR EEPROM 702

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
M24C08-RMN6P by STMicroelectronics

M24C08-RMN6P

STMicroelectronics

M24C08-RMN6P from STMicroelectronics is an industrial-grade EEPROM with a 1Kx8 organization, operating b/w -40 °C and 85 °C. It features I2C communication, a max clock frequency of 0.4 MHz, and offers hardware write protection for reliable data storage. Ideal for applications requiring non-volatile memory in compact designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-G8

e4

4.9 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M24C08-WBN6P by STMicroelectronics

M24C08-WBN6P

STMicroelectronics

M24C08-WBN6P by STMicroelectronics is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 write/erase cycles endurance. It operates in synchronous mode at a max clock frequency of 0.4 MHz and has a serial I2C bus type. This industrial-grade memory IC is commonly used for hardware write protection applications.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDIP-T8

e3

9.27 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm

5 ms

HARDWARE

M24C16-RBN6P by STMicroelectronics

M24C16-RBN6P

STMicroelectronics

M24C16-RBN6P from STMicroelectronics is a 2Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, supports up to 1M write/erase cycles, and functions in industrial temperatures (-40 °C to 85 °C). Ideal for data storage in various electronic applications.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e3

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C16-RMB6TG by STMicroelectronics

M24C16-RMB6TG

STMicroelectronics

M24C16-RMB6TG from STMicroelectronics is a 2Kx8 EEPROM with a wide supply voltage range of 1.8V to 5.5V, ideal for industrial applications. It features a max clock frequency of 400 kHz and offers hardware write protection for data integrity. With an endurance of 1M write/erase cycles, it's perfect for reliable data storage in compact devices.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-N8

e4

3 mm

16384 bit

EEPROM

8

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

M24C16-WBN6P by STMicroelectronics

M24C16-WBN6P

STMicroelectronics

STMicroelectronics M24C16-WBN6P is an 8-terminal EEPROM with 2Kx8 organization, operating at 5V. It features I2C control byte 1010MMMR and offers a memory density of 16384 bits. Ideal for industrial applications requiring reliable data storage with up to 1000000 write/erase cycles.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e3

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M34E02-FMB1TG by STMicroelectronics

M34E02-FMB1TG

STMicroelectronics

M34E02-FMB1TG by STMicroelectronics is a compact EEPROM with a 256x8 organization, operating at 2.5V and supporting I2C communication. It features a max clock frequency of 400 kHz and offers hardware/software write protection. Ideal for low-power applications, it ensures reliable data retention with up to 1M write/erase cycles.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-XDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

70 Cel

0 Cel

256X8

UNSPECIFIED

HVSSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

SERIAL

1.8/3.3

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

2 mA

3.6 V

1.7 V

2.5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

10 ms

HARDWARE/SOFTWARE

CAT28C64BL-12 by Catalyst Semiconductor

CAT28C64BL-12

Catalyst Semiconductor

CAT28C64BL-12 by Catalyst Semiconductor is an 8KX8 EEPROM with a memory density of 65536 bit. It operates at 5V, has a programming voltage of 5V, and offers endurance up to 1M Write/Erase cycles. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

120 ns

NO

YES

1000000 Write/Erase Cycles

R-PDIP-T28

e3

36.695 mm

65536 bit

EEPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

32

PARALLEL

5

5

Not Qualified

5.08 mm

.0001 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

5 ms

M95080-RMB6TG by STMicroelectronics

M95080-RMB6TG

STMicroelectronics

M95080-RMB6TG by STMicroelectronics is a 1Kx8 EEPROM with a synchronous SPI interface, operating b/w 1.8V and 5.5V. It features a max clock frequency of 5 MHz and offers hardware/software write protection. Ideal for industrial applications, it endures up to 1M write/erase cycles.

5 MHz

40

1000000 Write/Erase Cycles

R-XBCC-N8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

UNSPECIFIED

VQCCN

SOLCC8,.11,20

RECTANGULAR

CHIP CARRIER, VERY THIN PROFILE

SERIAL

2/5

Not Qualified

.6 mm

SPI

.0000005 Amp

EEPROMs

1 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

BOTTOM

2 mm

5 ms

HARDWARE/SOFTWARE

M93C66-RMB6TG by STMicroelectronics

M93C66-RMB6TG

STMicroelectronics

STMicroelectronics M93C66-RMB6TG is a 4096-bit EEPROM with 256x16 organization, operating at 1 MHz clock frequency. It features software write protection and MICROWIRE serial bus type, suitable for industrial applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000002 Amp, it offers endurance of 1000000 Write/Erase Cycles.

8

1 MHz

40

1000000 Write/Erase Cycles

R-XDSO-N8

e4

3 mm

4096 bit

EEPROM

16

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

UNSPECIFIED

VSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

MICROWIRE

.000002 Amp

EEPROMs

2 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

10 ms

SOFTWARE

XCF01SVOG20C by Xilinx

XCF01SVOG20C

Xilinx

The Xilinx XCF01SVOG20C is a 1MX1 NOR type EEPROM with a memory density of 1048576 bits. It operates at a nominal voltage of 3.3V and has an endurance of 20000 write/erase cycles. This configuration memory is commonly used in industrial applications for storing and retrieving data efficiently.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

6.5024 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/3.3,3.3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF02SVOG20C by Xilinx

XCF02SVOG20C

Xilinx

Xilinx XCF02SVOG20C is a 2MX1 NOR EEPROM with 2097152-bit memory density. Operating at 3.3V, it offers 20000 write/erase cycles and supports industrial temperature grade applications. With a small outline package style, 0.65mm terminal pitch, and Gull Wing terminals, it's ideal for configuration memory needs in various electronic devices.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

6.5024 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

20

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/3.3,3.3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF08PFSG48C by Xilinx

XCF08PFSG48C

Xilinx

Xilinx XCF08PFSG48C is a 1.8V EEPROM with 8MX1 organization, NOR type, and 8388608-bit memory density. It operates at -40 to 85°C for industrial applications, featuring a max clock frequency of 33 MHz in a thin profile grid array package.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF08PVOG48C by Xilinx

XCF08PVOG48C

Xilinx

Xilinx XCF08PVOG48C is a 1.8V EEPROM with 8MX1 organization, NOR type, and 8388608-bit memory density. Operating at -40 to 85°C, it's ideal for industrial applications requiring a small outline package with thin profile and shrink pitch. With synchronous operation up to 33MHz, this configuration memory offers reliable performance in various electronic systems.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF16PFSG48C by Xilinx

XCF16PFSG48C

Xilinx

Xilinx XCF16PFSG48C is a 1.8V EEPROM with 16MX1 organization, NOR type, and 16777216-bit memory density. It operates in industrial temperature range (-40 to 85 °C) and has a thin profile grid array package suitable for configuration memory applications. With 20000 write/erase cycles endurance, it offers reliable performance in various industrial settings.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF16PVOG48C by Xilinx

XCF16PVOG48C

Xilinx

Xilinx XCF16PVOG48C is a 1.8V EEPROM with 16MX1 organization, NOR type, and 16777216-bit memory density. It operates in industrial temperature range (-40 to 85°C) and offers 20000 write/erase cycles. Ideal for configuration memory applications due to its small outline package style and serial interface.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF32PFSG48C by Xilinx

XCF32PFSG48C

Xilinx

Xilinx XCF32PFSG48C is a 32MX1 EEPROM with 3-STATE output, operating at 50 MHz clock frequency. It has 33554432-bit memory density and supports NOR type technology. Ideal for industrial applications, it offers 20000 Write/Erase cycles endurance and operates in a temperature range of -40 to 85°C.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

50 MHz

20

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

HARDWARE

XCF32PVOG48C by Xilinx

XCF32PVOG48C

Xilinx

Xilinx XCF32PVOG48C is a 32MX1 EEPROM with 33554432-bit memory density. Operating at 1.8V, it offers 20000 write/erase cycles and supports industrial temperature grade applications. With a small outline package style, it features synchronous operation and GULL WING terminal form for serial configuration memory needs.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XC17S100AVOG8C by Xilinx

XC17S100AVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-609 Code: e3;

COMMON

R-PDSO-G8

e3

4.9 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

8

781216 words

781216

SYNCHRONOUS

70 Cel

0 Cel

781216X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S15AVOG8C by Xilinx

XC17S15AVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Package Equivalence Code: SOP8,.25;

COMMON

R-PDSO-G8

e3

4.9 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

8

197696 words

197696

SYNCHRONOUS

70 Cel

0 Cel

197696X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200AVOG8C by Xilinx

XC17S200AVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3;

COMMON

R-PDSO-G8

e3

4.9 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200AVOG8I by Xilinx

XC17S200AVOG8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;

COMMON

R-PDSO-G8

e3

4.9 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S50AVOG8C by Xilinx

XC17S50AVOG8C

Xilinx

The Xilinx XC17S50AVOG8C is a 559200-bit EEPROM with 3.3V supply voltage, operating in synchronous mode. It features a small outline package and Gull Wing terminals, suitable for configuration memory applications. With a max temperature of 70°C, it offers 3-STATE output characteristics and consumes up to 15mA supply current.

COMMON

R-PDSO-G8

e3

4.9 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC1736EVOG8C by Xilinx

XC1736EVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 10 MHz;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

36288 bit

CONFIGURATION MEMORY

1

3

1

8

36288 words

36288

SYNCHRONOUS

70 Cel

0 Cel

36288X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

5

Not Qualified

1.1938 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC1765ELVOG8C by Xilinx

XC1765ELVOG8C

Xilinx

XC1765ELVOG8C by Xilinx is a 64KX1 EEPROM with 3.3V supply, operating at up to 2.5 MHz clock frequency. It features a small outline package suitable for commercial applications, offering 65536 bits of memory density and serial interface for configuration memory tasks.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

2.5 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

65536 bit

CONFIGURATION MEMORY

1

3

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.1938 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

24LC024H-I/P by Microchip Technology

24LC024H-I/P

Microchip Technology

24LC024H-I/P by Microchip Technology is an EEPROM with 256x8 organization, operating at 1 MHz clock frequency. It has a supply voltage range of 2.5V to 5.5V and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

4.5

Not Qualified

TS 16949

5.334 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24VL024H/SN by Microchip Technology

24VL024H/SN

Microchip Technology

24VL024H/SN by Microchip Tech is an EEPROM with 256x8 organization, 2048-bit memory density, and 1.8-3.6V supply voltage range. Ideal for applications requiring low power consumption, such as IoT devices and wearables due to its small outline package and I2C serial bus interface.

1.5V TO 1.8V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-20 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/3.3

2.5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

3.6 V

1.8 V

2.5

YES

CMOS

OTHER

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

24VL024HT/MNY by Microchip Technology

24VL024HT/MNY

Microchip Technology

24VL024HT/MNY by Microchip Technology is an EEPROM with 256x8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and offers 1000000 write/erase cycles endurance. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in compact designs.

1.5V TO 1.8V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-20 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/3.3

2.5

Not Qualified

TS 16949

.8 mm

I2C

.000001 Amp

EEPROMs

3 mA

3.6 V

1.8 V

2.5

YES

CMOS

OTHER

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

M34F04-WMN6TP by STMicroelectronics

M34F04-WMN6TP

STMicroelectronics

M34F04-WMN6TP from STMicroelectronics is a 512x8 EEPROM with a synchronous operating mode, ideal for industrial applications. It operates at 2.7-5.5V and supports I2C communication, ensuring efficient data storage and retrieval. With a max temp of 85 °C and endurance of 1M cycles, it's reliable for demanding environments.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e4

4.9 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.7/5

Not Qualified

1.75 mm

I2C

.0000005 Amp

EEPROMs

1 mA

5.5 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M95128-RDW6TG by STMicroelectronics

M95128-RDW6TG

STMicroelectronics

M95128-RDW6TG by STMicroelectronics is an EEPROM with 16KX8 organization, SPI serial bus type, and 100000 write/erase cycles endurance. It operates in industrial temperature grade range from -40 to 85 °C and has a max clock frequency of 2 MHz. Ideal for applications requiring reliable non-volatile memory storage in compact electronic devices.

2 MHz

40

100000 Write/Erase Cycles

R-PDSO-G8

e4

4.4 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

VSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

.65 mm

SPI

.0000005 Amp

EEPROMs

1 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE/SOFTWARE

XC17128EPDG8C by Xilinx

XC17128EPDG8C

Xilinx

Xilinx XC17128EPDG8C is a 128Kx1 EEPROM with 15MHz clock frequency, operating at 5V. It features synchronous operation, 3-STATE output, and serial interface. Ideal for configuration memory applications in commercial-grade devices due to its compact size and low standby current of 0.00005A.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

131072 bit

CONFIGURATION MEMORY

1

1

1

8

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17256EPDG8C by Xilinx

XC17256EPDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

262144 bit

CONFIGURATION MEMORY

1

1

1

8

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APDG8C by Xilinx

XC17S200APDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 1335840X1;

COMMON

R-PDIP-T8

e3

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APDG8I by Xilinx

XC17S200APDG8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

COMMON

R-PDIP-T8

e3

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S50APDG8C by Xilinx

XC17S50APDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 250;

COMMON

R-PDIP-T8

e3

9.3599 mm

559200 bit

CONFIGURATION MEMORY

1

1

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC18V01SOG20C by Xilinx

XC18V01SOG20C

Xilinx

XC18V01SOG20C by Xilinx is a 128Kx8 EEPROM with NOR type technology. It operates at 3.3V, has a clock frequency of 33MHz, and offers 20000 write/erase cycles. Ideal for industrial applications requiring configuration memory with a parallel/serial interface and small outline package style.

15 ns

33 MHz

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

12.827 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

2.6416 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5184 mm

XC18V512SOG20C by Xilinx

XC18V512SOG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Length: 12.827 mm;

15 ns

33 MHz

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

12.827 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

2.6416 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5184 mm

XC1701LPDG8I by Xilinx

XC1701LPDG8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1736EPDG8C by Xilinx

XC1736EPDG8C

Xilinx

XC1736EPDG8C by Xilinx is a 36288-bit EEPROM with 10 MHz clock frequency, operating at 5V. It features synchronous operation, 3-STATE output, and serial interface. Ideal for configuration memory applications in commercial-grade devices due to its compact size and low standby current of 0.00005 Amp.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

36288 bit

CONFIGURATION MEMORY

1

1

1

8

36288 words

36288

SYNCHRONOUS

70 Cel

0 Cel

36288X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1736ESOG8C by Xilinx

XC1736ESOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

36288 bit

CONFIGURATION MEMORY

1

3

1

8

36288 words

36288

SYNCHRONOUS

70 Cel

0 Cel

36288X1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

250

5

Not Qualified

1.7272 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC1765EPDG8C by Xilinx

XC1765EPDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Memory Density: 65536 bit;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1765ELSOG8C by Xilinx

XC1765ELSOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

2.5 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

65536 bit

CONFIGURATION MEMORY

1

3

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

250

3.3

Not Qualified

1.7272 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC1765ESOG8C by Xilinx

XC1765ESOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

65536 bit

CONFIGURATION MEMORY

1

3

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

250

5

Not Qualified

1.7272 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC1701L-PDG8C by Xilinx

XC1701L-PDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Equivalence Code: DIP8,.3;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

M24C32-RMB6TG by STMicroelectronics

M24C32-RMB6TG

STMicroelectronics

M24C32-RMB6TG by STMicroelectronics is a 32Kb EEPROM with I2C interface, ideal for automotive applications due to its AEC-Q100 screening. It operates at 1.8V-5.5V and supports up to 1M write/erase cycles, ensuring reliability in harsh environments. Its compact size (3mm x 2mm) and low power consumption make it suitable for space-constrained designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

32768 bit

EEPROM

8

1

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2/5

Not Qualified

AEC-Q100

.6 mm

I2C

.0000002 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

M95512-RDW6P by STMicroelectronics

M95512-RDW6P

STMicroelectronics

M95512-RDW6P by STMicroelectronics is a 64KX8 EEPROM with SPI serial bus, 5 MHz clock frequency, and 1000000 write/erase cycles. It operates in industrial temperature range (-40 to 85 °C) and has a small outline package suitable for various applications requiring non-volatile memory storage.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.4 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.2 mm

SPI

.000005 Amp

EEPROMs

8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE/SOFTWARE

24FC512-I/ST by Microchip Technology

24FC512-I/ST

Microchip Technology

The Microchip Technology 24FC512-I/ST is an EEPROM with 64KX8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 1 MHz and can endure up to 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

2.5

Not Qualified

TS 16949

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24AA01T-I/MC by Microchip Technology

24AA01T-I/MC

Microchip Technology

24AA01T-I/MC by Microchip Technology is an EEPROM with 128x8 organization, I2C serial bus type, and 1.7V min supply voltage. It operates in industrial temperature grade (-40 to 85 °C) and offers 1000000 write/erase cycles endurance. Ideal for applications requiring reliable non-volatile memory storage in compact designs.

1.7V TO 2.5V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-N8

e3

3 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

M24512-RDW6P by STMicroelectronics

M24512-RDW6P

STMicroelectronics

M24512-RDW6P by STMicroelectronics is a 64Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, supports up to 4M write/erase cycles, and functions in industrial temperatures from -40 °C to 85 °C. Ideal for data storage in compact electronic devices.

.4 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.4 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE