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Micron Technology DRAM 1,751

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT46V64M8P-5BAIT:J by Micron Technology

MT46V64M8P-5BAIT:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Self Refresh: YES;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

10.16 mm

MTA9ADF1G72PKIZ-3G2E1 by Micron Technology

MTA9ADF1G72PKIZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Position: DUAL;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-PDMA-N288

80 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX72

PLASTIC/EPOXY

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

INDUSTRIAL

NO LEAD

DUAL

4 mm

MTA16ATF2G64AZ-3G2J1 by Micron Technology

MTA16ATF2G64AZ-3G2J1

Micron Technology

Micron Technology's MTA16ATF2G64AZ-3G2J1 is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1612 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in microelectronic assemblies.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1612 MHz

COMMON

8

R-XDMA-N288

133.35 mm

137438953472 bit

DDR4 DRAM MODULE

64

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

31.4 mm

YES

8

1.14 V

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

NOT SPECIFIED

3.9 mm

MTA16ATF2G64HZ-3G2J1 by Micron Technology

MTA16ATF2G64HZ-3G2J1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N260

69.6 mm

137438953472 bit

DDR4 DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.7 mm

MTA4ATF51264AZ-3G2J1 by Micron Technology

MTA4ATF51264AZ-3G2J1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Interleaved Burst Length: 4,8;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1612.903 MHz

COMMON

4,8

R-XDMA-N288

133.35 mm

34359738368 bit

DDR4 DRAM MODULE

64

1

1

288

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

DIMM288,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

31.4 mm

YES

4,8

1.14 V

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.6 mm

DUAL

NOT SPECIFIED

2.7 mm

MTA4ATF51264HZ-3G2J1 by Micron Technology

MTA4ATF51264HZ-3G2J1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N260

69.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

260

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.5 mm

MT41K256M16TW-107AT:P by Micron Technology

MT41K256M16TW-107AT:P

Micron Technology

Micron Technology's MT41K256M16TW-107AT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile grid array packages.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MTA8ATF1G64HZ-3G2J1 by Micron Technology

MTA8ATF1G64HZ-3G2J1

Micron Technology

Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N260

69.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.7 mm

MT44K32M36RB-107EIT:A by Micron Technology

MT44K32M36RB-107EIT:A

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 1.42 V;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

-40 Cel

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093EIT:B by Micron Technology

MT44K16M36RB-093EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093F:B by Micron Technology

MT44K16M36RB-093F:B

Micron Technology

Micron Technology's MT44K16M36RB-093F:B is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and a memory density of 603979776 bits. Ideal for applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-107E:B by Micron Technology

MT44K16M36RB-107E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Density: 603979776 bit;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-107EIT:B by Micron Technology

MT44K16M36RB-107EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093E:B by Micron Technology

MT44K32M18RB-093E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093F:B by Micron Technology

MT44K32M18RB-093F:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Technology: CMOS;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-107E:B by Micron Technology

MT44K32M18RB-107E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT41K512M16VRN-107AAT:P by Micron Technology

MT41K512M16VRN-107AAT:P

Micron Technology

Micron Technology's MT41K512M16VRN-107AAT:P is a DDR3L DRAM with 512MX16 organization, operating at up to 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

934.57 MHz

COMMON

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

.022 Amp

304 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT61K512M32KPA-16:B by Micron Technology

MT61K512M32KPA-16:B

Micron Technology

Micron Technology's MT61K512M32KPA-16:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V

COMMON

R-PBGA-B180

14 mm

17179869184 bit

GDDR6 DRAM

32

1

1

180

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

BALL

.75 mm

BOTTOM

NOT SPECIFIED

12 mm

MT40A4G4DVN-062H:E by Micron Technology

MT40A4G4DVN-062H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

BOTTOM

MT40A8G4CLU-062H:E by Micron Technology

MT40A8G4CLU-062H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT40A8G4CLU-075H:E by Micron Technology

MT40A8G4CLU-075H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT40A256M16LY-062EAAT:F by Micron Technology

MT40A256M16LY-062EAAT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EAAT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and reliability in harsh environments.

MULTI BANK PAGE BURST

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

OPEN-DRAIN

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

8

.048 Amp

1.14 V

58 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A256M16LY-062EAIT:F by Micron Technology

MT40A256M16LY-062EAIT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EAIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 95°C.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

8

.046 Amp

1.14 V

56 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A256M16LY-062EAUT:F by Micron Technology

MT40A256M16LY-062EAUT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EAUT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, common I/O type, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.

MULTI BANK PAGE BURST

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX16

OPEN-DRAIN

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

8

.05 Amp

1.14 V

60 mA

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A512M8SA-062EAAT:F by Micron Technology

MT40A512M8SA-062EAAT:F

Micron Technology

Micron Technology's MT40A512M8SA-062EAAT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 105°C.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.047 Amp

1.14 V

51 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8SA-062EAIT:F by Micron Technology

MT40A512M8SA-062EAIT:F

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.045 Amp

1.14 V

49 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8SA-062EAUT:F by Micron Technology

MT40A512M8SA-062EAUT:F

Micron Technology

DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.049 Amp

1.14 V

53 mA

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MTA9ASF2G72PZ-3G2B1 by Micron Technology

MTA9ASF2G72PZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PZ-3G2J3 by Micron Technology

MTA18ASF2G72PZ-3G2J3

Micron Technology

Micron Technology's MTA18ASF2G72PZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, operating at up to 1600 MHz clock frequency. It features a memory density of 154618822656 bits and is suitable for applications requiring high-speed synchronous memory access in servers or data centers.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA9ASF1G72PZ-3G2J3 by Micron Technology

MTA9ASF1G72PZ-3G2J3

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA16ATF4G64AZ-3G2B1 by Micron Technology

MTA16ATF4G64AZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

R-XDMA-N288

274877906944 bit

DDR4 DRAM MODULE

64

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

OTHER

NO LEAD

DUAL

MTA36ASF8G72PZ-2G9B1 by Micron Technology

MTA36ASF8G72PZ-2G9B1

Micron Technology

DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

R-XDMA-N288

618475290624 bit

DRAM MODULE

72

1

1

288

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

OTHER

NO LEAD

DUAL

MTA4ATF1G64AZ-3G2B1 by Micron Technology

MTA4ATF1G64AZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words: 1073741824 words;

SINGLE BANK PAGE BURST

R-XDMA-N288

68719476736 bit

DDR4 DRAM MODULE

64

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

OTHER

NO LEAD

DUAL

MT46V16M16CY-5B:KTR by Micron Technology

MT46V16M16CY-5B:KTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

8 mm

MT41K512M16VRN-107AAT:PTR by Micron Technology

MT41K512M16VRN-107AAT:PTR

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

934.57 MHz

COMMON

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

.022 Amp

304 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41K512M16VRN-107AIT:PTR by Micron Technology

MT41K512M16VRN-107AIT:PTR

Micron Technology

Micron Technology's MT41K512M16VRN-107AIT:PTR is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and low power consumption.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

934.57 MHz

COMMON

4,8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

4,8

.022 Amp

1.283 V

304 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41K512M8DA-093:PTR by Micron Technology

MT41K512M8DA-093:PTR

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

1066 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.012 Amp

150 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT44K16M36RB-093E:BTR by Micron Technology

MT44K16M36RB-093E:BTR

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Equivalence Code: BGA168,13X13,40;

MULTI BANK PAGE BURST

1075 MHz

COMMON

2,4

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR3 DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

100 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

2,4

.225 Amp

2840 mA

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093EIT:BTR by Micron Technology

MT44K16M36RB-093EIT:BTR

Micron Technology

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Interleaved Burst Length: 2,4;

MULTI BANK PAGE BURST

1075 MHz

COMMON

2,4

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR3 DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

100 Cel

-40 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

YES

2,4

.225 Amp

2840 mA

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-093F:BTR by Micron Technology

MT44K16M36RB-093F:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Clock Frequency (fCLK): 1075.2 MHz; No. of Functions: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

1075.2 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2840 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-107E:BTR by Micron Technology

MT44K16M36RB-107E:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Organization: 16MX36; Width: 13.5 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2665 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-093E:BTR by Micron Technology

MT44K32M18RB-093E:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; Maximum Clock Frequency (fCLK): 1075.2 MHz;

MULTI BANK PAGE BURST

AUTO REFRESH

1075.2 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2620 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-107E:BTR by Micron Technology

MT44K32M18RB-107E:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-609 Code: e1; Length: 13.5 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2565 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-107EIT:BTR by Micron Technology

MT44K32M18RB-107EIT:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Supply Current: 2565 mA; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

-40 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

NO

2,4,8

.225 Amp

2565 mA

1.45 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-125E:ATR by Micron Technology

MT44K32M18RB-125E:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Terminal Form: BALL; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

800 MHz

COMMON

2,4,8

S-PBGA-B168

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

NO

2,4,8

1.45 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

13.5 mm

MT44K32M36RB-093E:ATR by Micron Technology

MT44K32M36RB-093E:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; Organization: 32MX36;

MULTI BANK PAGE BURST

AUTO REFRESH

1075.2 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

1207959552 bit

RLDRAM3

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

1140 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M36RB-107E:ATR by Micron Technology

MT44K32M36RB-107E:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Width: 36; Memory Density: 1207959552 bit;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

1207959552 bit

RLDRAM3

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

1070 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M36RB-107EIT:ATR by Micron Technology

MT44K32M36RB-107EIT:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Sequential Burst Length: 2,4,8; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

13.5 mm

1207959552 bit

RLDRAM3

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

-40 Cel

32MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

NO

2,4,8

.225 Amp

1070 mA

1.45 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm