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Micron Technology DRAM 1,751

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT16LSDF6464HG-13ED2 by Micron Technology

MT16LSDF6464HG-13ED2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

5.4 ns

143 MHz

COMMON

R-PDMA-N144

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

144

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM144,32

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

8192

.032 Amp

DRAMs

4560 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

.8 mm

DUAL

MT46V16M16P5B:FTR by Micron Technology

MT46V16M16P5B:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

200 MHz

COMMON

2,4,8

R-PDSO-G66

268435456 bit

DDR1 DRAM

16

66

16777216 words

16M

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

2,4,8

DRAMs

2.6

YES

CMOS

COMMERCIAL

GULL WING

.635 mm

DUAL

MT8VDDT6464AY-40BF4 by Micron Technology

MT8VDDT6464AY-40BF4

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N184

4294967296 bit

DDR DRAM MODULE

64

184

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.04 Amp

DRAMs

3600 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT48LC2M32B2TG6IT:GTR by Micron Technology

MT48LC2M32B2TG6IT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.5 ns

166 MHz

COMMON

1,2,4,8

R-PDSO-G86

67108864 bit

SYNCHRONOUS DRAM

32

86

2097152 words

2M

85 Cel

-40 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

225 mA

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

MT8VDDT6464HDY-40BF2 by Micron Technology

MT8VDDT6464HDY-40BF2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.04 Amp

DRAMs

1940 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT9LSDT1672G-133G2 by Micron Technology

MT9LSDT1672G-133G2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

R-PDMA-N168

1207959552 bit

SYNCHRONOUS DRAM MODULE

72

168

16777216 words

16M

55 Cel

0 Cel

16MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM168

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

4096

.018 Amp

DRAMs

2790 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT18VDDF12872G-40BD3 by Micron Technology

MT18VDDF12872G-40BD3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N184

9663676416 bit

DDR DRAM MODULE

72

184

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.09 Amp

DRAMs

8100 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT18VDDF12872Y-40BF1 by Micron Technology

MT18VDDF12872Y-40BF1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N184

9663676416 bit

DDR DRAM MODULE

72

184

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.09 Amp

DRAMs

8100 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT36VDDF25672Y-40BF3 by Micron Technology

MT36VDDF25672Y-40BF3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N184

19327352832 bit

DDR DRAM MODULE

72

184

268435456 words

256M

70 Cel

0 Cel

256MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.18 Amp

DRAMs

12420 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT18VDDF12872HY-40BF1 by Micron Technology

MT18VDDF12872HY-40BF1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N200

9663676416 bit

DDR DRAM MODULE

72

200

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.09 Amp

DRAMs

6210 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT8VDDT12832UY-6F1 by Micron Technology

MT8VDDT12832UY-6F1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N100

2147483648 bit

DDR DRAM MODULE

32

100

67108864 words

64M

70 Cel

0 Cel

64MX32

3-STATE

PLASTIC/EPOXY

DIMM

DIMM100

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.04 Amp

DRAMs

1640 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT16JSF51264HZ-1G1D1 by Micron Technology

MT16JSF51264HZ-1G1D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

533 MHz

COMMON

R-PDMA-N204

34359738368 bit

DDR DRAM MODULE

64

204

536870912 words

512M

70 Cel

0 Cel

512MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

.192 Amp

DRAMs

2656 mA

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT4VDDT3264AY-40BF1 by Micron Technology

MT4VDDT3264AY-40BF1

Micron Technology

Micron Technology's MT4VDDT3264AY-40BF1 is a 32MX64 DDR DRAM MODULE with 184 terminals, operating at 200 MHz. It has a memory density of 2.15 Gb and supports a max clock frequency of 0.7 ns. Ideal for commercial applications requiring high-speed data processing and storage capabilities.

.7 ns

200 MHz

COMMON

R-PDMA-N184

2147483648 bit

DDR DRAM MODULE

64

184

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.02 Amp

DRAMs

1920 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT16HTF12864HZ-667G1 by Micron Technology

MT16HTF12864HZ-667G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

8589934592 bit

DDR DRAM MODULE

64

200

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.112 Amp

DRAMs

1976 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT16HTF25664AZ-667H1 by Micron Technology

MT16HTF25664AZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

333 MHz

COMMON

R-PDMA-N240

17179869184 bit

DDR DRAM MODULE

64

240

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.112 Amp

DRAMs

2296 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT16HTF25664AZ-800H1 by Micron Technology

MT16HTF25664AZ-800H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

400 MHz

COMMON

R-PDMA-N240

17179869184 bit

DDR DRAM MODULE

64

240

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.112 Amp

DRAMs

2736 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT16VDDT12864AY-40BF2 by Micron Technology

MT16VDDT12864AY-40BF2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N184

8589934592 bit

DDR DRAM MODULE

64

184

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.08 Amp

DRAMs

5520 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT8VDDT6464HDY-40BJ1 by Micron Technology

MT8VDDT6464HDY-40BJ1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.04 Amp

DRAMs

1940 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT8JSF25664HDZ-1G4D1 by Micron Technology

MT8JSF25664HDZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N204

17179869184 bit

DDR DRAM MODULE

64

204

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.096 Amp

DRAMs

2040 mA

1.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT9HTF6472RHZ-667G1 by Micron Technology

MT9HTF6472RHZ-667G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

4831838208 bit

DDR DRAM MODULE

72

200

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

DRAMs

1260 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT8LSDT1664AY-133G3 by Micron Technology

MT8LSDT1664AY-133G3

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

R-PDMA-N168

1073741824 bit

SYNCHRONOUS DRAM MODULE

64

168

16777216 words

16M

70 Cel

0 Cel

16MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM168

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

4096

.016 Amp

DRAMs

2480 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT16LSDT3264AY-133G3 by Micron Technology

MT16LSDT3264AY-133G3

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

R-PDMA-N168

2147483648 bit

SYNCHRONOUS DRAM MODULE

64

168

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM168

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

4096

.032 Amp

DRAMs

4960 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT4VDDT3264HIY-335J1 by Micron Technology

MT4VDDT3264HIY-335J1

Micron Technology

DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N200

2147483648 bit

DDR DRAM MODULE

64

200

33554432 words

32M

85 Cel

-40 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

DRAMs

1620 mA

2.5

NO

CMOS

INDUSTRIAL

NO LEAD

.6 mm

DUAL

MT4VDDT3264HY-335J1 by Micron Technology

MT4VDDT3264HY-335J1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N200

2147483648 bit

DDR DRAM MODULE

64

200

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

DRAMs

1620 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT16KSF51264HZ-1G4D1 by Micron Technology

MT16KSF51264HZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N204

34359738368 bit

DDR DRAM MODULE

64

204

536870912 words

512M

70 Cel

0 Cel

512MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

DRAMs

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT48H8M32LFB5-75AT:H by Micron Technology

MT48H8M32LFB5-75AT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: FBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

268435456 bit

SYNCHRONOUS DRAM

32

90

8388608 words

8M

105 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

FBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8

Not Qualified

4096

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

MT8VDDT6464HY-335J1 by Micron Technology

MT8VDDT6464HY-335J1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.04 Amp

DRAMs

3240 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT18VDDT12872AY-40BJ1 by Micron Technology

MT18VDDT12872AY-40BJ1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N184

9663676416 bit

DDR DRAM MODULE

72

184

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

DRAMs

4095 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT46V64M8CY-5BAIT:J by Micron Technology

MT46V64M8CY-5BAIT:J

Micron Technology

DDR1 DRAM; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH; TERM PITCH-MAX

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

8192

AEC-Q100

1.2 mm

YES

2,4,8

2.7 V

2.5 V

2.6

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

8 mm

MT8KTF25664AZ-1G6K1 by Micron Technology

MT8KTF25664AZ-1G6K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.225 ns

800 MHz

COMMON

R-PDMA-N240

17179869184 bit

DDR DRAM MODULE

64

240

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

.096 Amp

DRAMs

1248 mA

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT8KTF51264AZ-1G6E1 by Micron Technology

MT8KTF51264AZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.225 ns

800 MHz

COMMON

R-PDMA-N240

34359738368 bit

DDR DRAM MODULE

64

240

536870912 words

512M

70 Cel

0 Cel

512MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

.144 Amp

DRAMs

1760 mA

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT8KTF12864HZ-1G4G1 by Micron Technology

MT8KTF12864HZ-1G4G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N204

8589934592 bit

DDR DRAM MODULE

64

204

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

.096 Amp

DRAMs

1960 mA

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT8KTF51264HZ-1G6E1 by Micron Technology

MT8KTF51264HZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

800 MHz

COMMON

R-PDMA-N204

34359738368 bit

DDR DRAM MODULE

64

204

536870912 words

512M

70 Cel

0 Cel

512MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

.144 Amp

DRAMs

1760 mA

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT8KTF51264HZ-1G9E5 by Micron Technology

MT8KTF51264HZ-1G9E5

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

933 MHz

COMMON

R-PDMA-N204

34359738368 bit

DDR DRAM MODULE

64

204

536870912 words

512M

70 Cel

0 Cel

512MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

.144 Amp

DRAMs

2008 mA

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT42L64M32D1LF-18IT:C by Micron Technology

MT42L64M32D1LF-18IT:C

Micron Technology

Micron Technology's MT42L64M32D1LF-18IT:C is a LPDDR2 DRAM with 168 terminals, operating at 533 MHz. It has a memory density of 2147483648 bits and supports sequential burst lengths of 4, 8, and 16. Ideal for industrial applications requiring high-speed data processing in temperatures ranging from -40 to 85°C.

5.5 ns

533 MHz

COMMON

4,8,16

S-PBGA-B168

2147483648 bit

LPDDR2 DRAM

168

85 Cel

-40 Cel

3-STATE

PLASTIC/EPOXY

FBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, FINE PITCH

1.2,1.8

Not Qualified

8192

4,8,16

.000025 Amp

DRAMs

220 mA

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MT48H16M16LFBF-75IT:H by Micron Technology

MT48H16M16LFBF-75IT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B54

e1

9 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H128M16LFCK-5IT:A by Micron Technology

MT46H128M16LFCK-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

11.5 mm

2147483648 bit

LPDDR1 DRAM

16

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

130 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT46H128M16LFCK-6IT:A by Micron Technology

MT46H128M16LFCK-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

11.5 mm

2147483648 bit

LPDDR1 DRAM

16

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

115 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT46H128M32L2KQ-5IT:A by Micron Technology

MT46H128M32L2KQ-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

.75 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

MT46H128M32L2MC-5IT:A by Micron Technology

MT46H128M32L2MC-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 240; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

S-PBGA-B240

e1

14 mm

4294967296 bit

LPDDR1 DRAM

32

1

1

240

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA240,27X27,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.8 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

14 mm

MT46H256M32L4JV-5IT:A by Micron Technology

MT46H256M32L4JV-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

8589934592 bit

LPDDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

MT46H256M32L4JV-6IT:A by Micron Technology

MT46H256M32L4JV-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

8589934592 bit

LPDDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H64M32LFCM-5IT:A by Micron Technology

MT46H64M32LFCM-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.01 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT46H64M32LFCM-6IT:A by Micron Technology

MT46H64M32LFCM-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.01 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT46H64M32LFMA-5IT:A by Micron Technology

MT46H64M32LFMA-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Memory Density: 2147483648 bit;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

.7 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H64M32LFMA-6IT:A by Micron Technology

MT46H64M32LFMA-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.7 mm

YES

2,4,8,16

.01 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT47R128M8CF-3:H by Micron Technology

MT47R128M8CF-3:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

450 ns

SELF CONTAINED REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

1.55

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47R256M4CF-3:H by Micron Technology

MT47R256M4CF-3:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

450 ns

SELF CONTAINED REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

4

1

1

60

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

1.55

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm