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Micron Technology DRAM 1,751

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MTA18ASF2G72PDZ-2G3A1 by Micron Technology

MTA18ASF2G72PDZ-2G3A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.85 mm

DUAL

NOT SPECIFIED

3.9 mm

MTA36ADS4G72PZ-2G3A1 by Micron Technology

MTA36ADS4G72PZ-2G3A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

309237645312 bit

DDR DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

85 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.85 mm

DUAL

3.9 mm

MTA36ASF4G72LZ-2G3A1 by Micron Technology

MTA36ASF4G72LZ-2G3A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

309237645312 bit

DDR DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

85 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.85 mm

DUAL

3.9 mm

MTA8ATF1G64HZ-2G3A1 by Micron Technology

MTA8ATF1G64HZ-2G3A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.5 mm

ZIG-ZAG

3.7 mm

MT49H16M18CFM-25:B by Micron Technology

MT49H16M18CFM-25:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18CBM-25:B by Micron Technology

MT49H16M18CBM-25:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

11 mm

MT40A1G8PM-083E:A by Micron Technology

MT40A1G8PM-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A2G4PM-083E:A by Micron Technology

MT40A2G4PM-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8RKB-107:N by Micron Technology

MT41K1G8RKB-107:N

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: DUAL BANK PAGE BURST; Self Refresh: YES;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

10.5 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K2G4RKB-107:N by Micron Technology

MT41K2G4RKB-107:N

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

10.5 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K512M16HA-125AIT:A by Micron Technology

MT41K512M16HA-125AIT:A

Micron Technology

Micron Technology's MT41K512M16HA-125AIT:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT48LC32M8A2P-7E:G by Micron Technology

MT48LC32M8A2P-7E:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

54

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT49H16M18CSJ-25:B by Micron Technology

MT49H16M18CSJ-25:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18CSJ-25IT:B by Micron Technology

MT49H16M18CSJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M18SJ-25:B by Micron Technology

MT49H16M18SJ-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Width: 11 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H16M18SJ-25IT:B by Micron Technology

MT49H16M18SJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M36SJ-18IT:B by Micron Technology

MT49H16M36SJ-18IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

11 mm

MT49H16M36SJ-25:B by Micron Technology

MT49H16M36SJ-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 11 mm; No. of Functions: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

30

11 mm

MT49H16M36SJ-25IT:B by Micron Technology

MT49H16M36SJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CSJ-18:B by Micron Technology

MT49H32M18CSJ-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 11 mm; No. of Functions: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H32M18CSJ-25E:B by Micron Technology

MT49H32M18CSJ-25E:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8; Maximum Supply Voltage (Vsup): 1.9 V;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CSJ-25EIT:B by Micron Technology

MT49H32M18CSJ-25EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H32M18SJ-18:B by Micron Technology

MT49H32M18SJ-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M18SJ-25:B by Micron Technology

MT49H32M18SJ-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 33554432 words; Width: 11 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H64M9SJ-25E:B by Micron Technology

MT49H64M9SJ-25E:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

9

1

1

144

67108864 words

64M

SYNCHRONOUS

64MX9

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT9KSF51272AZ-1G6P1 by Micron Technology

MT9KSF51272AZ-1G6P1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Functions: 1;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

EDY4016AABG-DR-F-D by Micron Technology

EDY4016AABG-DR-F-D

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 256M;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

EDY4016AABG-JD-F-D by Micron Technology

EDY4016AABG-JD-F-D

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

MT18KSF1G72HZ-1G6P1 by Micron Technology

MT18KSF1G72HZ-1G6P1

Micron Technology

DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XZMA-N204

67.6 mm

77309411328 bit

DDR3L DRAM MODULE

72

1

1

204

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT18KSF1G72PZ-1G6P1 by Micron Technology

MT18KSF1G72PZ-1G6P1

Micron Technology

DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

77309411328 bit

DDR3L DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT46V32M16P-5BXIT:J by Micron Technology

MT46V32M16P-5BXIT:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT9KSF51272HZ-1G6P1 by Micron Technology

MT9KSF51272HZ-1G6P1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XZMA-N204

67.6 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT44K32M36RB-083F:A by Micron Technology

MT44K32M36RB-083F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Ports: 1; Nominal Supply Voltage / Vsup (V): 1.35;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M36RB-093E:A by Micron Technology

MT44K32M36RB-093E:A

Micron Technology

Micron Technology's MT44K32M36RB-093E:A is a DDR DRAM with 32MX36 organization, operating at 1.35V. It features synchronous mode, multi-bank page burst access, and thin profile grid array package style. Ideal for high-density memory applications requiring fast data processing and low power consumption.

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M36RB-093F:A by Micron Technology

MT44K32M36RB-093F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.35; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M36RB-107E:A by Micron Technology

MT44K32M36RB-107E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Terminal Form: BALL; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K64M18RB-083F:A by Micron Technology

MT44K64M18RB-083F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Words: 67108864 words; Minimum Supply Voltage (Vsup): 1.28 V;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K64M18RB-093E:A by Micron Technology

MT44K64M18RB-093E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Nominal Supply Voltage / Vsup (V): 1.35;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K64M18RB-093F:A by Micron Technology

MT44K64M18RB-093F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B168; No. of Words: 67108864 words;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K64M18RB-107E:A by Micron Technology

MT44K64M18RB-107E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; JESD-609 Code: e1;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT8KTF51264AZ-1G9P1 by Micron Technology

MT8KTF51264AZ-1G9P1

Micron Technology

Micron Technology's MT8KTF51264AZ-1G9P1 is a 512MX64 DDR3 DRAM with 64-bit memory width. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular package has 240 terminals and supports single bank page burst access mode.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

34359738368 bit

DDR3 DRAM

64

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MTA72ASS8G72LZ-2G3A1 by Micron Technology

MTA72ASS8G72LZ-2G3A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

309237645312 bit

DDR DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

85 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MT48LC16M16A2P-6AAAT:G by Micron Technology

MT48LC16M16A2P-6AAAT:G

Micron Technology

MT48LC16M16A2P-6AAAT:G by Micron Technology is a 16MX16 Synchronous DRAM with 268MB memory density. It operates at 3.3V, has a max access time of 5.4ns, and is suitable for industrial applications requiring fast and reliable memory performance.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

AEC-Q100

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

EDB5432BEBH-1DAAT-F-D by Micron Technology

EDB5432BEBH-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; Organization: 16MX32;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

10 mm

EDB5432BEBH-1DAUT-F-D by Micron Technology

EDB5432BEBH-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB5432BEBH-1DIT-F-D by Micron Technology

EDB5432BEBH-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB5432BEPA-1DAAT-F-D by Micron Technology

EDB5432BEPA-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Pitch: .5 mm; Minimum Supply Voltage (Vsup): 1.14 V;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

EDB5432BEPA-1DIT-F-D by Micron Technology

EDB5432BEPA-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm