Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Additional Features: AUTO REFRESH;
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DRAM MT49H16M18CFM-25:B attributes and parameters. Explore more DRAM devices from Micron Technology
Access Mode:
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MT49H16M18CFM-25:B Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.28
SB
8542.32.00.15
PCN Assembly/Origin - Tray Pkg Label Chgs 8/Oct/2020
PCN Packaging - Memory 24-May-2022 Tray 05-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
BSS123LT1G
Onsemi
BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.
1N4148WS
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
AH180-WG-7
Diodes Incorporated
AH180-WG-7 by Diodes Inc. is a magnetic field sensor with 1.5mT hysteresis, 0.30V output range, and 9mA max operating current. Ideal for applications requiring non-inverting analog voltage output in a compact rectangular package suitable for surface mount installations.
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM107H
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;
LM358MX
Texas Instruments
LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.
IRLML6402TRPBF
Infineon Technologies
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
Surge Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
STMicroelectronics
BAV99
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
LL4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LAN8720AI-CP-TR
Microchip Technology
LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
CRCW04020000Z0ED
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.
ULN2803A
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;
LM107H/883C
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;
MT40A1G8WE-075EAIT:B
Micron Technology
Micron Technology's MT40A1G8WE-075EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at 1333 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type. With self-refresh capability and wide temperature range (-40 to 95 °C), it offers reliable performance in demanding environments.
MT42L256M32D4KP-25IT:A
Micron Technology's MT42L256M32D4KP-25IT:A is a LPDDR2 DRAM with 256MX32 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
S27KL0642DPBHB020
Infineon's S27KL0642DPBHB020 is a 8MX8 DRAM with 67108864 bit memory density. It operates synchronously at up to 200 MHz, featuring self-refresh and 3-STATE output characteristics. Ideal for automotive applications due to AEC-Q100 screening level and low profile grid array package style.
S27KL0642DPBHI020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Memory Density: 67108864 bit;
MT41K256M16HA-125AAT
Micron Technology's MT41K256M16HA-125AAT is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile memory module is suitable for applications requiring high-speed data processing in compact devices.
MT40A4G8NEA-062E:F
MT40A4G8NEA-062E:F by Micron Technology is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package, common I/O type, and self-refresh capability. Ideal for applications requiring high-speed synchronous memory with a density of 34 Gb and low power consumption.
HYB25D512160BE-6
HYB25D512160BE-6 by Infineon Technologies is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates at a max clock frequency of 166 MHz and has a memory density of 536870912 bits. This memory module is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
MT40A1G16RC-062E:B
Micron Technology's MT40A1G16RC-062E:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in thin-profile devices.
M393A2G40EB2-CTD
Samsung
Samsung's M393A2G40EB2-CTD is a 288-terminal DDR DRAM module with 72-bit memory width and 2GX72 organization. Operating at 1.2V, it offers synchronous mode and self-refresh capability, making it ideal for high-performance computing applications requiring fast data access and reliable memory operations.
H5TQ4G63MFR-H9C
Sk Hynix
Sk Hynix's H5TQ4G63MFR-H9C is a 256MX16 DDR3 DRAM with 667 MHz clock frequency. It features 256M words, operates at 1.5V, and has a thin profile grid array package. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC16M16A2P-6AIT:G
Micron Technology's MT48LC16M16A2P-6AIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 3.3V supply voltage, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high-speed memory access with a compact form factor and low power consumption.
MT48LC32M16A2TG-75:CTR
Micron Technology's MT48LC32M16A2TG-75:CTR is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at 0-70°C. It features 33554432 words, 16-bit memory width, and 536870912 bit memory density. Ideal for applications requiring fast access time and synchronous operation.
MT40A256M16LY-062EAAT:FTR
Micron Technology's MT40A256M16LY-062EAAT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
IS43R16320D-6BL
Integrated Silicon Solution
IS43R16320D-6BL by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with a max clock frequency of 166 MHz. It operates synchronously and has a memory density of 536870912 bit. It is commonly used in applications requiring high-speed data storage and retrieval.
MT46H64M16LFBF-5IT:B
Micron Technology's MT46H64M16LFBF-5IT:B is a DDR1 DRAM with 64MX16 organization, operating at 200 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring fast memory access and low power consumption.
M386A8K40BM1-CRC
Samsung's M386A8K40BM1-CRC is a DDR DRAM MODULE with 8GX72 organization, 72 memory width, and 618475290624 bit memory density. It operates synchronously at 1.2V, featuring self-refresh capability for various applications requiring high-speed data processing in microelectronic assemblies.
MT46H128M32L2MC-6WT:B
Micron Technology's MT46H128M32L2MC-6WT:B is a 128MX32 DDR1 DRAM with 240 terminals and operates at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring fast access times and high memory density.
KM44C256BZ-8
Samsung's KM44C256BZ-8 is a 256Kx4 DRAM with 80ns access time, operating at 5V. It features a common I/O type, 3-state output characteristics, and fast page access mode. Ideal for commercial applications requiring high-speed memory with a memory density of 1048576 bits.
MT47H64M16HR-3IT:H
Micron Technology's MT47H64M16HR-3IT:H is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
AS4C8M16SA-6TINTR
Alliance Memory
Alliance Memory's AS4C8M16SA-6TINTR is a 8MX16 Synchronous DRAM with 166 MHz clock frequency, operating at -40 to 85 °C. Ideal for industrial applications, it features common I/O type, self-refresh mode, and small outline package style.
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MT49H8M36BM-25E:B
DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1; Package Style (Meter): GRID ARRAY, THIN PROFILE;
MT49H16M16BM-5
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;
MT49H16M16HT-5IT
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;
MT49H16M16FM-4IT
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Words Code: 16M;
MT49H16M16HT-4IT
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
MT49H16M16FM-33IT
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE;
MT49H16M16HU-33
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;
MT49H16M16BM-33IT
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Ports: 1;
MT49H16M16BM-5IT
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; Sequential Burst Length: 2,4;
MT49H16M16FM-5
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Width: 16;
MT49H16M16FM-5IT
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS;
MT49H16M16HT-4
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
MT49H16M16FM-3.3
DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 610 mA; Surface Mount: YES;
MT49H16M16HT-5
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 519 mA;
MT49H16M16BM-4IT
MT49H16M16HT-33
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
MT49H16M16FM-4
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Seated Height: .93 mm;
MT49H16M16BM-33
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B144;
MT49H16M16BM-4
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Words: 16777216 words;
MT49H16M16FM-33
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;
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