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Micron Technology DRAM 1,751

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT48LC4M32B2P-6AAAT:LTR by Micron Technology

MT48LC4M32B2P-6AAAT:LTR

Micron Technology

SYNCHRONOUS DRAM; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR; Organization: 4MX32;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

TSOP2

TSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

4096

AEC-Q100

1.2 mm

YES

1,2,4,8,FP

.045 Amp

120 mA

3.6 V

3 V

3.3

YES

CMOS

MATTE TIN

GULL WING

.5 mm

DUAL

30

10.16 mm

MT53E256M32D2DS-053AIT:BTR by Micron Technology

MT53E256M32D2DS-053AIT:BTR

Micron Technology

LPDDR4X DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit; Interleaved Burst Length: 16,32;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

e1

14.5 mm

8589934592 bit

LPDDR4X DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

10 mm

MT61K512M32KPA-14:BTR by Micron Technology

MT61K512M32KPA-14:BTR

Micron Technology

GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH, IT ALSO REQUIRES 1.25V SUPPLY

COMMON

R-PBGA-B180

14 mm

17179869184 bit

GDDR6 DRAM

32

1

1

180

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.3905 V

1.3095 V

1.35

YES

CMOS

BALL

.75 mm

BOTTOM

NOT SPECIFIED

12 mm

MT61K512M32KPA-16:BTR by Micron Technology

MT61K512M32KPA-16:BTR

Micron Technology

Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH, IT ALSO REQUIRES 1.25V SUPPLY

COMMON

R-PBGA-B180

14 mm

17179869184 bit

GDDR6 DRAM

32

1

1

180

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.3905 V

1.3095 V

1.35

YES

CMOS

BALL

.75 mm

BOTTOM

NOT SPECIFIED

12 mm

MT40A1G16KNR-075:ETR by Micron Technology

MT40A1G16KNR-075:ETR

Micron Technology

MT40A1G16KNR-075:ETR by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at a max clock frequency of 1333 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.

SINGLE BANK PAGE BURST

1333 MHz

COMMON

R-PBGA-B96

13.5 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

.036 Amp

360 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A1G8SA-062EAAT:ETR by Micron Technology

MT40A1G8SA-062EAAT:ETR

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A1G8WE-075EAIT:BTR by Micron Technology

MT40A1G8WE-075EAIT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333.33 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

149 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-075E:BTR by Micron Technology

MT40A1G8WE-075E:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075E:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package and common I/O type, suitable for applications requiring high memory density and fast data processing in devices like servers and PCs.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333.33 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

.046 Amp

63 mA

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-083EAAT:BTR by Micron Technology

MT40A1G8WE-083EAAT:BTR

Micron Technology

MT40A1G8WE-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 1GX8 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

138 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-083EAIT:BTR by Micron Technology

MT40A1G8WE-083EAIT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

138 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-083EAUT:BTR by Micron Technology

MT40A1G8WE-083EAUT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAUT:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory in automotive electronics and other industrial environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

138 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-083E:BTR by Micron Technology

MT40A1G8WE-083E:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083E:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.48 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices with a max temperature of 95°C.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.48 MHz

COMMON

8

R-PBGA-B78

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.034 Amp

175 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT40A256M16GE-075EAIT:BTR by Micron Technology

MT40A256M16GE-075EAIT:BTR

Micron Technology

DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 1333.33 MHz; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333.33 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A256M16GE-083EAIT:BTR by Micron Technology

MT40A256M16GE-083EAIT:BTR

Micron Technology

Micron Technology's MT40A256M16GE-083EAIT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A256M16GE-083EAUT:BTR by Micron Technology

MT40A256M16GE-083EAUT:BTR

Micron Technology

Micron Technology's MT40A256M16GE-083EAUT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features common I/O type, self-refresh mode, and operates in synchronous mode. Ideal for applications requiring high-speed memory access and low power consumption in automotive electronics.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A256M16LY-062EAAT:FTR by Micron Technology

MT40A256M16LY-062EAAT:FTR

Micron Technology

Micron Technology's MT40A256M16LY-062EAAT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A256M16LY-062EAIT:FTR by Micron Technology

MT40A256M16LY-062EAIT:FTR

Micron Technology

Micron Technology's MT40A256M16LY-062EAIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics due to AEC-Q100 screening level.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A256M16LY-062EAUT:FTR by Micron Technology

MT40A256M16LY-062EAUT:FTR

Micron Technology

Micron Technology's MT40A256M16LY-062EAUT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A512M16JY-075E:BTR by Micron Technology

MT40A512M16JY-075E:BTR

Micron Technology

Micron Technology's MT40A512M16JY-075E:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1333.33 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333.33 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,6X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

.05 Amp

105 mA

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT40A512M16JY-083EAAT:BTR by Micron Technology

MT40A512M16JY-083EAAT:BTR

Micron Technology

MT40A512M16JY-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

255 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A512M16JY-083EAIT:BTR by Micron Technology

MT40A512M16JY-083EAIT:BTR

Micron Technology

Micron Technology's MT40A512M16JY-083EAIT:BTR is a DDR4 DRAM with 512MX16 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

255 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A512M16JY-083EAUT:BTR by Micron Technology

MT40A512M16JY-083EAUT:BTR

Micron Technology

DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Operating Temperature: 125 Cel;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

255 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A512M16LY-062EAUT:ETR by Micron Technology

MT40A512M16LY-062EAUT:ETR

Micron Technology

MT40A512M16LY-062EAUT:ETR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1600 MHz. It is commonly used in applications requiring high-speed and synchronous memory access, such as servers, workstations, and high-performance computing systems.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13.5 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

.025 Amp

279 mA

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8RH-075EAAT:BTR by Micron Technology

MT40A512M8RH-075EAAT:BTR

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 105 Cel; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333.33 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A512M8RH-083EAIT:BTR by Micron Technology

MT40A512M8RH-083EAIT:BTR

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Screening Level: AEC-Q100; Minimum Supply Voltage (Vsup): 1.14 V;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A512M8SA-062EAAT:FTR by Micron Technology

MT40A512M8SA-062EAAT:FTR

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8SA-062EAIT:FTR by Micron Technology

MT40A512M8SA-062EAIT:FTR

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8SA-062EAUT:FTR by Micron Technology

MT40A512M8SA-062EAUT:FTR

Micron Technology

Micron Technology's MT40A512M8SA-062EAUT:FTR is a DDR4 DRAM with 512MX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for automotive applications, meeting AEC-Q100 standards. With self-refresh capability and common I/O type, it offers reliable performance in harsh environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A256M16LY-062EIT:FTR by Micron Technology

MT40A256M16LY-062EIT:FTR

Micron Technology

Micron Technology's MT40A256M16LY-062EIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13.5 mm

4294967296 bit

DDR4 DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

.022 Amp

270 mA

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A256M16LY-075:FTR by Micron Technology

MT40A256M16LY-075:FTR

Micron Technology

DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT40A512M8SA-062EIT:FTR by Micron Technology

MT40A512M8SA-062EIT:FTR

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.16 ns

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A1G16KD-062E:E by Micron Technology

MT40A1G16KD-062E:E

Micron Technology

Micron Technology's MT40A1G16KD-062E:E is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package, synchronous operation, and self-refresh capability. Ideal for applications requiring high-speed memory performance in compact form factors.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.14 V

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT53E128M32D2FW-046AIT:A by Micron Technology

MT53E128M32D2FW-046AIT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.1 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M32D2DS-046AAT:A by Micron Technology

MT53E128M32D2DS-046AAT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046AAT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast clock frequency.

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M32D2FW-046AUT:A by Micron Technology

MT53E128M32D2FW-046AUT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.1 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M32D2DS-046AUT:A by Micron Technology

MT53E128M32D2DS-046AUT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It has a very thin profile, fine pitch package style suitable for automotive applications. Features include synchronous operation, self-refresh capability, and common I/O type.

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M16D1DS-053AAT:A by Micron Technology

MT53E128M16D1DS-053AAT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

MT53B128M32D1DS-062AIT:A by Micron Technology

MT53B128M32D1DS-062AIT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1600 MHz

COMMON

R-PBGA-B200

e1

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

10 mm

MT53E128M16D1FW-046AIT:A by Micron Technology

MT53E128M16D1FW-046AIT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.1 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E256M32D2FW-046AUT:B by Micron Technology

MT53E256M32D2FW-046AUT:B

Micron Technology

Micron Technology's MT53E256M32D2FW-046AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

e1

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

10 mm

MT53E128M16D1DS-046AIT:A by Micron Technology

MT53E128M16D1DS-046AIT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M16D1DS-053AIT:A by Micron Technology

MT53E128M16D1DS-053AIT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M16D1DS-046AAT:A by Micron Technology

MT53E128M16D1DS-046AAT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M32D2DS-053AUT:A by Micron Technology

MT53E128M32D2DS-053AUT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-053AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level for automotive applications. The package style is grid array with very thin profile and fine pitch, suitable for single bank page burst access mode in automotive systems.

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT40A1G4HX-083E:A by Micron Technology

MT40A1G4HX-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 9 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A1G4HX-093E:A by Micron Technology

MT40A1G4HX-093E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A512M8HX-083E:A by Micron Technology

MT40A512M8HX-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A512M8HX-093E:A by Micron Technology

MT40A512M8HX-093E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 9 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm