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Micron Technology DRAM 1,751

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MTA18ASF1G72PDZ-2G1A1 by Micron Technology

MTA18ASF1G72PDZ-2G1A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.2;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA36ASF2G72LZ-2G1A1 by Micron Technology

MTA36ASF2G72LZ-2G1A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 72;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MT41J128M16JT-093J:K by Micron Technology

MT41J128M16JT-093J:K

Micron Technology

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 134217728 words; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

128MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT46H128M16LFB7-6IT:B by Micron Technology

MT46H128M16LFB7-6IT:B

Micron Technology

Micron Technology's MT46H128M16LFB7-6IT:B is a DDR1 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B60

e1

10 mm

2147483648 bit

DDR1 DRAM

16

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT42L384M32D3LP-18WT:A by Micron Technology

MT42L384M32D3LP-18WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Terminal Pitch: .4 mm; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

12884901888 bit

LPDDR2 DRAM

32

1

1

216

402653184 words

384M

SYNCHRONOUS

384MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.82 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L384M32D3LP-25WT:A by Micron Technology

MT42L384M32D3LP-25WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 384MX32; No. of Words Code: 384M;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

12884901888 bit

LPDDR2 DRAM

32

1

1

216

402653184 words

384M

SYNCHRONOUS

384MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.82 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT8KTF25664HZ-1G6M1 by Micron Technology

MT8KTF25664HZ-1G6M1

Micron Technology

Micron Technology's MT8KTF25664HZ-1G6M1 is a 256MX64 DDR DRAM MODULE with 800 MHz clock frequency. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed memory performance in commercial temperature environments.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

800 MHz

COMMON

R-XZMA-N204

e4

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

1760 mA

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT46H128M16LFDD-48AIT:C by Micron Technology

MT46H128M16LFDD-48AIT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

4.8 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

R-PBGA-B60

9 mm

2147483648 bit

LPDDR1 DRAM

16

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

AEC-Q100

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M32B2B5-6AIT:L by Micron Technology

MT48LC4M32B2B5-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2B5-6AIT:L is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz clock frequency. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in industrial environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41K256M16HA-125IT:ETR by Micron Technology

MT41K256M16HA-125IT:ETR

Micron Technology

Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT48LC8M16A2B4-6AAAT:L by Micron Technology

MT48LC8M16A2B4-6AAAT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H128M8CF-3AAT:H by Micron Technology

MT47H128M8CF-3AAT:H

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

R-PBGA-B60

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT47H128M8SH-187E:M by Micron Technology

MT47H128M8SH-187E:M

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H256M4SH-25E:M by Micron Technology

MT47H256M4SH-25E:M

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

4

1

1

60

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H64M16NF-187E:M by Micron Technology

MT47H64M16NF-187E:M

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT36HTF51272PZ-80EH1 by Micron Technology

MT36HTF51272PZ-80EH1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

400 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

4 mm

YES

.252 Amp

Other Memory ICs

6150 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

30.175 mm

MT36HVS51272PZ-80EH1 by Micron Technology

MT36HVS51272PZ-80EH1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

400 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

4 mm

YES

.252 Amp

DRAMs

6246 mA

1.9 V

1.7 V

1.8

NO

CMOS

OTHER

GOLD

NO LEAD

1 mm

DUAL

17.9 mm

MT18HVS25672PKZ-80EH1 by Micron Technology

MT18HVS25672PKZ-80EH1

Micron Technology

Micron Technology's MT18HVS25672PKZ-80EH1 is a 256MX72 DDR2 DRAM MODULE with 19327352832-bit memory density. Operating at 1.8V, it features synchronous mode and dual bank page burst access for commercial applications. The rectangular microelectronic assembly has a temperature range of 0-70°C, making it suitable for various memory-intensive tasks.

DUAL BANK PAGE BURST

AUTO REFRESH

R-XDMA-N244

e4

82 mm

19327352832 bit

DDR2 DRAM MODULE

72

1

1

244

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

3.8 mm

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

18.2 mm

MT16JSF51264HZ-1G4D1 by Micron Technology

MT16JSF51264HZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

R-XDMA-N204

67.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

3.8 mm

YES

.192 Amp

DRAMs

3016 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

30 mm

MT47H128M4SH-25E:H by Micron Technology

MT47H128M4SH-25E:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

536870912 bit

DDR2 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.01 Amp

DRAMs

150 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H32M16NF-187E:H by Micron Technology

MT47H32M16NF-187E:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.01 Amp

DRAMs

225 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H64M8SH-25EIT:H by Micron Technology

MT47H64M8SH-25EIT:H

Micron Technology

Micron Technology's MT47H64M8SH-25EIT:H is a DDR2 DRAM with 64MX8 organization, operating at 400 MHz. It features a 60-terminal grid array package, suitable for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.01 Amp

DRAMs

150 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT18HVS25672PKZ-80EM1 by Micron Technology

MT18HVS25672PKZ-80EM1

Micron Technology

DDR2 DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Package Shape: RECTANGULAR; Organization: 256MX72;

DUAL BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XDMA-N244

82 mm

19327352832 bit

DDR2 DRAM MODULE

72

1

1

244

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.3 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

3.8 mm

MT47H1G4WTR-25E:C by Micron Technology

MT47H1G4WTR-25E:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B63

11.5 mm

4294967296 bit

DDR2 DRAM

4

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT47H512M8WTR-25E:C by Micron Technology

MT47H512M8WTR-25E:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B63

11.5 mm

4294967296 bit

DDR2 DRAM

8

1

1

63

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT48LC16M16A2B4-6AAAT:G by Micron Technology

MT48LC16M16A2B4-6AAAT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-6AAAT:G is a 16MX16 DRAM with 16777216 words, operating at 3.3V. It features synchronous operation, industrial temperature grade, and very thin profile package style. Ideal for applications requiring fast access time and high memory density in automotive electronics or industrial systems.

FOUR BANK PAGE BURST

5.4 ns

AUTO REFRESH

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT48LC16M16A2B4-6AAIT:G by Micron Technology

MT48LC16M16A2B4-6AAIT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-6AAIT:G is a 16MX16 DRAM with 3.3V supply voltage, operating in synchronous mode. It features a grid array package style, very thin profile, and fine pitch terminals. Ideal for industrial applications requiring fast access time and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M16A2P-6AAIT:G by Micron Technology

MT48LC16M16A2P-6AAIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-6AAIT:G is a 16MX16 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access times and high memory density in a compact small outline package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MT48LC16M16A2P-6AL:G by Micron Technology

MT48LC16M16A2P-6AL:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC32M8A2BB-6A:G by Micron Technology

MT48LC32M8A2BB-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B60

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC32M8A2BB-7E:G by Micron Technology

MT48LC32M8A2BB-7E:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B60

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC32M8A2P-6A:G by Micron Technology

MT48LC32M8A2P-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

54

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC64M4A2BB-6A:G by Micron Technology

MT48LC64M4A2BB-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: SQUARE; Memory Density: 268435456 bit;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B60

16 mm

268435456 bit

SYNCHRONOUS DRAM

4

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX4

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC64M4A2P-6A:G by Micron Technology

MT48LC64M4A2P-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

4

1

1

54

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX4

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT41K256M8DA-125AAT:K by Micron Technology

MT41K256M8DA-125AAT:K

Micron Technology

Micron Technology's MT41K256M8DA-125AAT:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and is designed for automotive applications due to its AEC-Q100 screening level. The memory IC offers a memory density of 2147483648 bits and supports multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

8

1

1

78

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

AEC-Q100

1.2 mm

YES

8

.012 Amp

DRAMs

195 mA

1.45 V

1.283 V

1.35

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT47H128M8SH-25EAAT:M by Micron Technology

MT47H128M8SH-25EAAT:M

Micron Technology

Micron Technology's MT47H128M8SH-25EAAT:M is a DDR2 DRAM with 128MX8 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed performance. Ideal for applications requiring fast memory access in automotive electronics or industrial control systems.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

128MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT47H128M8SH-25EAIT:M by Micron Technology

MT47H128M8SH-25EAIT:M

Micron Technology

Micron Technology's MT47H128M8SH-25EAIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as automotive electronics or industrial control systems.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.2 mm

YES

4,8

.01 Amp

210 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT42L16M32D1LG-25AAT:A by Micron Technology

MT42L16M32D1LG-25AAT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: .8 mm; Terminal Form: BALL;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

S-PBGA-B168

e1

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT8HTF6464HDY-667D3 by Micron Technology

MT8HTF6464HDY-667D3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

R-XDMA-N200

e4

67.6 mm

4294967296 bit

DDR DRAM MODULE

64

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

3.8 mm

YES

.056 Amp

DRAMs

1480 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

DUAL

30.5 mm

MT4HTF3264AY-53ED3 by Micron Technology

MT4HTF3264AY-53ED3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.5 ns

267 MHz

COMMON

R-PDMA-N240

2147483648 bit

DDR DRAM MODULE

64

240

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

DRAMs

1360 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT8HTF6464HDY-53ED3 by Micron Technology

MT8HTF6464HDY-53ED3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.5 ns

266 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.056 Amp

DRAMs

1380 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT16HTF6464AY-40EB2 by Micron Technology

MT16HTF6464AY-40EB2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.6 ns

200 MHz

COMMON

R-PDMA-N240

4294967296 bit

DDR DRAM MODULE

64

240

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.08 Amp

DRAMs

1880 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT4HTF3264HY-53ED3 by Micron Technology

MT4HTF3264HY-53ED3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.5 ns

267 MHz

COMMON

R-PDMA-N200

2147483648 bit

DDR DRAM MODULE

64

200

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.028 Amp

DRAMs

1360 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT16HTF12864AY-53ED4 by Micron Technology

MT16HTF12864AY-53ED4

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.5 ns

266 MHz

COMMON

R-PDMA-N240

8589934592 bit

DDR DRAM MODULE

64

240

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.112 Amp

DRAMs

1856 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT16VDDF12864HG-335D2 by Micron Technology

MT16VDDF12864HG-335D2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

R-XDMA-N200

e0

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

YES

.08 Amp

DRAMs

3280 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

TIN LEAD

NO LEAD

.6 mm

DUAL

MT18HTF12872AY-667D4 by Micron Technology

MT18HTF12872AY-667D4

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

333 MHz

COMMON

R-XDMA-N240

e4

9663676416 bit

DDR DRAM MODULE

72

1

1

240

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

YES

DRAMs

3240 mA

1.9 V

1.7 V

1.8

NO

CMOS

OTHER

GOLD

NO LEAD

1 mm

DUAL

MT16LSDT6464AY-13ED2 by Micron Technology

MT16LSDT6464AY-13ED2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Shape: RECTANGULAR; Terminal Position: DUAL; No. of Words Code: 64M;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-XDMA-N168

e4

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

1

1

168

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

MT36HTF25672PY-667D1 by Micron Technology

MT36HTF25672PY-667D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; JESD-609 Code: e4;

DUAL BANK PAGE BURST

45 ns

AUTO/SELF REFRESH

R-XDMA-N240

e4

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

YES

1.9 V

1.7 V

1.8

NO

CMOS

OTHER

GOLD

NO LEAD

DUAL