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RECTANGULAR DRAM 1,707

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT36HTF1G72PZ-80EC1 by Micron Technology

MT36HTF1G72PZ-80EC1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.4 ns

SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XDMA-N240

e3

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

Other Memory ICs

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

4 mm

MT36HTF25672PZ-667G1 by Micron Technology

MT36HTF25672PZ-667G1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

e3

19327352832 bit

72

1

240

268435456 words

256M

70 Cel

0 Cel

256MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

Other Memory ICs

2646 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT36JSZF1G72PZ-1G4D1 by Micron Technology

MT36JSZF1G72PZ-1G4D1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N240

e4

77309411328 bit

72

240

1073741824 words

1G

70 Cel

0 Cel

1GX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.432 Amp

Other Memory ICs

7200 mA

1.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

MT4HTF3264HZ-667G1 by Micron Technology

MT4HTF3264HZ-667G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

e3

2147483648 bit

DDR DRAM MODULE

64

1

200

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.028 Amp

DRAMs

1400 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT4HTF3264HZ-800G1 by Micron Technology

MT4HTF3264HZ-800G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

R-PDMA-N200

e3

67.6 mm

536870912 bit

DDR DRAM MODULE

16

1

1

1

200

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.028 Amp

DRAMs

1480 mA

3.6 V

1.7 V

1.8

NO

CMOS

OTHER

MATTE TIN

NO LEAD

.6 mm

DUAL

2.45 mm

MT4HTF6464HZ-800H1 by Micron Technology

MT4HTF6464HZ-800H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

4294967296 bit

DDR DRAM MODULE

64

1

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.028 Amp

DRAMs

1760 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

2.45 mm

MT72JSS2G72PZ-1G1D1 by Micron Technology

MT72JSS2G72PZ-1G1D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.3 ns

533 MHz

COMMON

R-PDMA-N240

e3

154618822656 bit

DDR DRAM MODULE

72

1

240

2147483648 words

2G

70 Cel

0 Cel

2GX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.864 Amp

DRAMs

7130 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT8HTF12864HZ-667H1 by Micron Technology

MT8HTF12864HZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

333 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.056 Amp

DRAMs

2240 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT8HTF12864HZ-800H1 by Micron Technology

MT8HTF12864HZ-800H1

Micron Technology

Micron Technology's MT8HTF12864HZ-800H1 is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. Operating at 1.8V, it offers 8192 refresh cycles and has a memory density of 8589934592 bits. Ideal for applications requiring high-speed synchronous memory access in commercial temperature environments.

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.056 Amp

DRAMs

2680 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT8JSF25664HZ-1G1D1 by Micron Technology

MT8JSF25664HZ-1G1D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

533 MHz

COMMON

R-XZMA-N204

e3

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

2560 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT8JSF25664HZ-1G4D1 by Micron Technology

MT8JSF25664HZ-1G4D1

Micron Technology

Micron Technology's MT8JSF25664HZ-1G4D1 is a 256MX64 DDR DRAM MODULE with 667 MHz clock frequency. Operating at 1.5V, it offers 8192 refresh cycles and features a single bank page burst access mode. Ideal for commercial applications requiring high-speed memory performance in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

R-PDMA-N204

e3

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

2920 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

30 mm

MT9HTF12872AZ-667H1 by Micron Technology

MT9HTF12872AZ-667H1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

e3

9663676416 bit

72

1

240

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

2520 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT9HTF12872AZ-80EH1 by Micron Technology

MT9HTF12872AZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N240

e3

9663676416 bit

72

1

240

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

2250 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT9HTF6472PKZ-667G1 by Micron Technology

MT9HTF6472PKZ-667G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N244

e3

4831838208 bit

DDR DRAM MODULE

72

1

244

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM244,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

DRAMs

1260 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT9HVF12872PZ-80EH1 by Micron Technology

MT9HVF12872PZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N240

e3

9663676416 bit

72

1

240

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

1890 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT9HVF6472PZ-667G1 by Micron Technology

MT9HVF6472PZ-667G1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

e3

4831838208 bit

72

1

240

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT9JSF25672AZ-1G4D1 by Micron Technology

MT9JSF25672AZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.255 ns

SELF REFRESH; WD-MAX

667 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

30.5 mm

YES

.108 Amp

Other Memory ICs

3285 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

2.7 mm

MT16JTF25664HZ-1G4G1 by Micron Technology

MT16JTF25664HZ-1G4G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N204

e3

17179869184 bit

DDR DRAM MODULE

64

1

204

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.192 Amp

DRAMs

4016 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT16JTF25664HZ-1G6G1 by Micron Technology

MT16JTF25664HZ-1G6G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

800 MHz

COMMON

R-PDMA-N204

e3

17179869184 bit

DDR DRAM MODULE

64

1

204

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.192 Amp

DRAMs

4896 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT47H512M8WTR-3:C by Micron Technology

MT47H512M8WTR-3:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

COMMON

R-PBGA-B63

e3

4294967296 bit

DDR2 DRAM

8

1

63

536870912 words

512M

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

FBGA

BGA63,9X11,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8

Not Qualified

8192

DRAMs

1.8

YES

CMOS

OTHER

MATTE TIN

BALL

.8 mm

BOTTOM

MT8JTF12864HZ-1G4G1 by Micron Technology

MT8JTF12864HZ-1G4G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.255 ns

667 MHz

COMMON

R-PDMA-N204

e3

8589934592 bit

DDR DRAM MODULE

64

1

204

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.096 Amp

DRAMs

3920 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT8JTF12864HZ-1G6G1 by Micron Technology

MT8JTF12864HZ-1G6G1

Micron Technology

Micron Technology's MT8JTF12864HZ-1G6G1 is a 128MX64 DDR DRAM MODULE with 204 terminals, operating at 800 MHz. It has a memory density of 8589934592 bits and supports a max clock frequency of 800 MHz. Ideal for commercial applications requiring high-speed data processing and storage capabilities.

.225 ns

800 MHz

COMMON

R-PDMA-N204

e3

8589934592 bit

DDR DRAM MODULE

64

1

204

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.096 Amp

DRAMs

4800 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

IS42S16320D-7BLI-TR by Integrated Silicon Solution

IS42S16320D-7BLI-TR

Integrated Silicon Solution

IS42S16320D-7BLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation, self-refresh capability, and common I/O type. It features a max clock frequency of 143 MHz and is ideal for industrial applications requiring high-speed memory access in thin profile packages.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B54

e1

13 mm

536870912 bit

CACHE DRAM MODULE

16

3

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

IS42S32160D-7BLI-TR by Integrated Silicon Solution

IS42S32160D-7BLI-TR

Integrated Silicon Solution

IS42S32160D-7BLI-TR by Integrated Silicon Solution is a 16MX32 DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type for efficient data processing.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e3

13 mm

536870912 bit

CACHE DRAM MODULE

32

1

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

300 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.8 mm

BOTTOM

8 mm

MT41K1G8THE-15E:D by Micron Technology

MT41K1G8THE-15E:D

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

12 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

10.5 mm

MT41K1G8TRF-125:E by Micron Technology

MT41K1G8TRF-125:E

Micron Technology

MT41K1G8TRF-125:E by Micron Technology is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and consumes up to 243 mA of current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

DUAL BANK PAGE BURST

.225 ns

SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e0

11.5 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.036 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

9.5 mm

MT41K2G4TRF-125:E by Micron Technology

MT41K2G4TRF-125:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.225 ns

SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

11.5 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.036 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9.5 mm

IS43DR16160A-3DBLI-TR by Integrated Silicon Solution

IS43DR16160A-3DBLI-TR

Integrated Silicon Solution

IS43DR16160A-3DBLI-TR by Integrated Silicon Solution is a 16MX16 DDR2 DRAM with 333 MHz clock frequency. Operating at 1.8V, it offers 16M words and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times.

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

268435456 bit

DDR2 DRAM

16

1

1

84

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.005 Amp

DRAMs

330 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M16A2P-75:GTR by Micron Technology

MT48LC4M16A2P-75:GTR

Micron Technology

Micron Technology's MT48LC4M16A2P-75:GTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at 70°C max temp. It features self-refresh mode, small outline package, and dual terminal position. Ideal for commercial applications requiring fast access time and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

3

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

W9725G6KB25I by Winbond Electronics

W9725G6KB25I

Winbond Electronics

Winbond Electronics' W9725G6KB25I is a DDR2 DRAM with 16Mx16 organization, operating at 400MHz. It features a 1.8V supply voltage, 84 terminals in a thin profile grid array package, and supports synchronous operation. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

268435456 bit

DDR2 DRAM

16

1

1

84

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.006 Amp

DRAMs

135 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT48H8M32LFB5-75IT:H by Micron Technology

MT48H8M32LFB5-75IT:H

Micron Technology

Micron Technology's MT48H8M32LFB5-75IT:H is a 8MX32 DRAM with 133 MHz clock frequency, 85 mA supply current, and 85°C max operating temp. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT16LSDF6464HY-13EG1 by Micron Technology

MT16LSDF6464HY-13EG1

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 67.585 mm;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N144

e4

67.585 mm

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

67108864 words

64M

SYNCHRONOUS

65 Cel

0 Cel

64MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

31.88 mm

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

.8 mm

ZIG-ZAG

30

3.8 mm

TMS4030JL by Texas Instruments

TMS4030JL

Texas Instruments

TMS4030JL by Texas Instruments is a 4Kx1 DRAM with 4096-bit memory density, 300ns max access time, and 64 refresh cycles. It has separate I/O type and operates in commercial temperature range. Ideal for applications requiring low-power memory solutions in industrial electronics.

300 ns

SEPARATE

R-XDIP-T22

4096 bit

1

22

4096 words

4K

70 Cel

0 Cel

4KX1

3-STATE

CERAMIC

DIP

DIP22,.4

RECTANGULAR

IN-LINE

NOT SPECIFIED

Not Qualified

64

Other Memory ICs

60 mA

NO

MOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

TMS45169-70DZ by Texas Instruments

TMS45169-70DZ

Texas Instruments

TMS45169-70DZ by Texas Instruments is a 256Kx16 EDO DRAM with 70ns access time, 512 refresh cycles, and 3-STATE output. It operates at a voltage of 5V and has a max standby current of 0.001A. Commonly used in commercial applications requiring high-speed memory solutions.

70 ns

COMMON

R-PDSO-J40

4194304 bit

EDO DRAM

16

40

262144 words

256K

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

512

YES

.001 Amp

DRAMs

160 mA

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

MT16HTF51264HZ-800C1 by Micron Technology

MT16HTF51264HZ-800C1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

200

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

DRAMs

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

IS42S16800F-5TLI by Integrated Silicon Solution

IS42S16800F-5TLI

Integrated Silicon Solution

IS42S16800F-5TLI by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at up to 200 MHz clock frequency. Ideal for industrial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

130 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

IS42S16800F-6TL by Integrated Silicon Solution

IS42S16800F-6TL

Integrated Silicon Solution

IS42S16800F-6TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 4096 refresh cycles, and supports common I/O type. Ideal for commercial applications requiring fast memory access and low standby current consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

120 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

MT16HTF25664HIZ-667H1 by Micron Technology

MT16HTF25664HIZ-667H1

Micron Technology

Micron Technology's MT16HTF25664HIZ-667H1 is a 256MX64 DDR DRAM MODULE with 333 MHz clock frequency. It operates synchronously at 1.8V, featuring self-refresh capability and dual bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

333 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

200

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.112 Amp

DRAMs

3440 mA

1.9 V

1.7 V

1.8

NO

CMOS

INDUSTRIAL

Gold (Au)

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT41K512M8RH-125:E by Micron Technology

MT41K512M8RH-125:E

Micron Technology

Micron Technology's MT41K512M8RH-125:E is a DDR3L DRAM with 512MX8 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like smartphones and tablets.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

8

3

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

9 mm

MT41K256M16HA-125:E by Micron Technology

MT41K256M16HA-125:E

Micron Technology

Micron Technology's MT41K256M16HA-125:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and a low supply voltage of 1.35V. Ideal for applications requiring high-speed memory access in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

9 mm

MT18VDDT12872AY-40BF1 by Micron Technology

MT18VDDT12872AY-40BF1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

200 MHz

COMMON

R-XDMA-N184

e4

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

184

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

3-STATE

UNSPECIFIED

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

31.9 mm

YES

DRAMs

4095 mA

2.7 V

2.5 V

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1.27 mm

DUAL

4 mm

MT4JTF25664AZ-1G6E1 by Micron Technology

MT4JTF25664AZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

UPD48288209AFF-E24-DW1-A by Renesas Electronics

UPD48288209AFF-E24-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 400 MHz; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

COMMON

2,4,8

R-PBGA-B144

e6

18.5 mm

301989888 bit

DDR1 DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

TIN BISMUTH

BALL

.8 mm

BOTTOM

11 mm

UPD48288236AFF-E18-DW1-A by Renesas Electronics

UPD48288236AFF-E18-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 533 MHz; Memory Width: 36;

533 MHz

COMMON

R-PBGA-B144

e6

301989888 bit

DDR1 DRAM

36

144

8388608 words

8M

8MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

2,4,8

DRAMs

YES

CMOS

TIN BISMUTH

BALL

.8 mm

BOTTOM

UPD48288236AFF-E33-DW1 by Renesas Electronics

UPD48288236AFF-E33-DW1

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Memory Width: 36; JESD-30 Code: R-PBGA-B144;

300 MHz

COMMON

R-PBGA-B144

301989888 bit

DDR1 DRAM

36

144

8388608 words

8M

8MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

2,4,8

DRAMs

YES

CMOS

BALL

.8 mm

BOTTOM

MT18JSF51272PKZ-1G4K1 by Micron Technology

MT18JSF51272PKZ-1G4K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 82 mm;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

82 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

3.8 mm

MT47R128M8CF-25:H by Micron Technology

MT47R128M8CF-25:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT47R256M4CF-25E:H by Micron Technology

MT47R256M4CF-25E:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

10 mm

1073741824 bit

DDR2 DRAM

4

1

1

60

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm