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DDR4 DRAM MODULE DRAM 47

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MTA9ASF51272AZ-2G1A1 by Micron Technology

MTA9ASF51272AZ-2G1A1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 284; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words: 536870912 words;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N284

133.35 mm

38654705664 bit

DDR4 DRAM MODULE

72

1

1

284

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.38 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.61 mm

MTA18ADF2G72PDZ-3G2E1 by Micron Technology

MTA18ADF2G72PDZ-3G2E1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

COMMON

8

R-XDMA-N288

133.25 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

DIMM288,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

NO LEAD

.6 mm

DUAL

3.9 mm

MTA36ASF2G72PZ-2G6F1 by Micron Technology

MTA36ASF2G72PZ-2G6F1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1333 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

DIMM288,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

8

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA16ATF2G64AZ-3G2J1 by Micron Technology

MTA16ATF2G64AZ-3G2J1

Micron Technology

Micron Technology's MTA16ATF2G64AZ-3G2J1 is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1612 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in microelectronic assemblies.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1612 MHz

COMMON

8

R-XDMA-N288

133.35 mm

137438953472 bit

DDR4 DRAM MODULE

64

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

31.4 mm

YES

8

1.14 V

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

NOT SPECIFIED

3.9 mm

MTA16ATF2G64HZ-3G2J1 by Micron Technology

MTA16ATF2G64HZ-3G2J1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N260

69.6 mm

137438953472 bit

DDR4 DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.7 mm

MTA4ATF51264AZ-3G2J1 by Micron Technology

MTA4ATF51264AZ-3G2J1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Interleaved Burst Length: 4,8;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1612.903 MHz

COMMON

4,8

R-XDMA-N288

133.35 mm

34359738368 bit

DDR4 DRAM MODULE

64

1

1

288

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

DIMM288,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

31.4 mm

YES

4,8

1.14 V

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.6 mm

DUAL

NOT SPECIFIED

2.7 mm

MTA9ASF2G72PZ-3G2B1 by Micron Technology

MTA9ASF2G72PZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PZ-3G2J3 by Micron Technology

MTA18ASF2G72PZ-3G2J3

Micron Technology

Micron Technology's MTA18ASF2G72PZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, operating at up to 1600 MHz clock frequency. It features a memory density of 154618822656 bits and is suitable for applications requiring high-speed synchronous memory access in servers or data centers.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA16ATF4G64AZ-3G2B1 by Micron Technology

MTA16ATF4G64AZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

R-XDMA-N288

274877906944 bit

DDR4 DRAM MODULE

64

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

OTHER

NO LEAD

DUAL

MTA4ATF1G64AZ-3G2B1 by Micron Technology

MTA4ATF1G64AZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words: 1073741824 words;

SINGLE BANK PAGE BURST

R-XDMA-N288

68719476736 bit

DDR4 DRAM MODULE

64

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

OTHER

NO LEAD

DUAL

MTA9ASF1G72PZ-2G6B1 by Micron Technology

MTA9ASF1G72PZ-2G6B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 95 Cel;

SINGLE BANK PAGE BURST

1333 MHz

COMMON

8

R-XDMA-N288

133.35 mm

77309411328 bit

DDR4 DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PZ-2G6D1 by Micron Technology

MTA18ASF2G72PZ-2G6D1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Output Characteristics: OPEN-DRAIN;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1333 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

8

.45 Amp

3600 mA

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PKTZ-2G6B1 by Micron Technology

MTA18ASF2G72PKTZ-2G6B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

80 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

4 mm

MTA18ASF2G72PDZ-3G2E1 by Micron Technology

MTA18ASF2G72PDZ-3G2E1

Micron Technology

MTA18ASF2G72PDZ-3G2E1 by Micron Technology is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1600 MHz. It features a memory density of 154618822656 bits and supports DUAL BANK PAGE BURST access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72XF1Z-2G6V21AB by Micron Technology

MTA18ASF2G72XF1Z-2G6V21AB

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

NOT SPECIFIED

5.8 mm

MTA36ASF8G72PZ-3G2B2 by Micron Technology

MTA36ASF8G72PZ-3G2B2

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

618475290624 bit

DDR4 DRAM MODULE

72

1

1

288

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA4ATF1G64HZ-3G2B1 by Micron Technology

MTA4ATF1G64HZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; JESD-30 Code: R-XDMA-N260;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

R-XDMA-N260

68719476736 bit

DDR4 DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

NO

CMOS

OTHER

NO LEAD

DUAL

MTA9ASF1G72PZ-3G2E2 by Micron Technology

MTA9ASF1G72PZ-3G2E2

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 72;

SINGLE BANK PAGE BURST

1612 MHz

COMMON

8

R-XDMA-N288

133.35 mm

77309411328 bit

DDR4 DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

.198 Amp

1710 mA

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA8ATF2G64HZ-3G2E1 by Micron Technology

MTA8ATF2G64HZ-3G2E1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N260

137438953472 bit

DDR4 DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

NO

CMOS

OTHER

NO LEAD

DUAL

MTA18ASF2G72PDZ-3G2J3 by Micron Technology

MTA18ASF2G72PDZ-3G2J3

Micron Technology

Micron Technology's MTA18ASF2G72PDZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, 1600 MHz clock frequency, and 154618822656 bit memory density. It operates synchronously at 1.2V and is ideal for high-performance computing applications requiring fast data processing.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA72ASS16G72PSZ-3S2B1 by Micron Technology

MTA72ASS16G72PSZ-3S2B1

Micron Technology

Micron Technology's MTA72ASS16G72PSZ-3S2B1 is a DDR4 DRAM MODULE with 16GX72 organization, 1600 MHz clock frequency, and 1236950581248 bit memory density. It operates synchronously at 1.2V, suitable for high-performance computing applications requiring fast data processing and storage capabilities.

DUAL BANK PAGE BURST

1600 MHz

COMMON

R-XDMA-N288

1236950581248 bit

DDR4 DRAM MODULE

72

1

288

17179869184 words

16G

SYNCHRONOUS

95 Cel

0 Cel

16GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.2

YES

CMOS

NO LEAD

DUAL

MTA18ASF2G72HBZ-3G2E1 by Micron Technology

MTA18ASF2G72HBZ-3G2E1

Micron Technology

DDR4 DRAM MODULE; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1; Maximum Operating Temperature: 105 Cel;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

R-XZMA-N260

69.6 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

260

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

.468 Amp

1989 mA

1.2

NO

CMOS

NO LEAD

ZIG-ZAG

3.7 mm

MTA4ATF1G64HZ-3G2E1 by Micron Technology

MTA4ATF1G64HZ-3G2E1

Micron Technology

Micron Technology's MTA4ATF1G64HZ-3G2E1 is a DDR4 DRAM MODULE with 1GX64 organization, operating at up to 1600 MHz. It features self-refresh capability and synchronous operation, making it ideal for high-performance computing applications.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

R-XDMA-N260

68719476736 bit

DDR4 DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

YES

NO

CMOS

OTHER

NO LEAD

DUAL

30

MTA16ATF4G64HZ-3G2E1 by Micron Technology

MTA16ATF4G64HZ-3G2E1

Micron Technology

DDR4 DRAM MODULE; No. of Terminals: 260; Package Code: DIMM; JESD-30 Code: R-XDMA-N260; Memory Density: 274877906944 bit; Terminal Position: DUAL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

R-XDMA-N260

274877906944 bit

DDR4 DRAM MODULE

64

1

1

260

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX64

UNSPECIFIED

DIMM

MICROELECTRONIC ASSEMBLY

YES

.608 Amp

1808 mA

1.2

NO

CMOS

NO LEAD

DUAL

MTA36ASF8G72LZ-3G2B1 by Micron Technology

MTA36ASF8G72LZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 1600 MHz; JESD-30 Code: R-XDMA-N288;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

R-XDMA-N288

618475290624 bit

DDR4 DRAM MODULE

72

1

1

288

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

1.548 Amp

5058 mA

1.2

NO

CMOS

NO LEAD

DUAL

MTA18ASF2G72HZ-2G6E1 by Micron Technology

MTA18ASF2G72HZ-2G6E1

Micron Technology

Micron Technology's MTA18ASF2G72HZ-2G6E1 is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1333 MHz. It features a memory density of 154618822656 bit and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with self-refresh capability.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1333 MHz

COMMON

4,8

R-XDMA-N260

69.6 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

3-STATE

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

4,8

.45 Amp

1881 mA

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.7 mm

MTA8ATF2G64HZ-3G2E2 by Micron Technology

MTA8ATF2G64HZ-3G2E2

Micron Technology

Micron Technology's MTA8ATF2G64HZ-3G2E2 is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in microelectronic assemblies.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

COMMON

R-XDMA-N260

69.6 mm

137438953472 bit

DDR4 DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

DIMM260,20

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

.304 Amp

1480 mA

1.2

NO

CMOS

OTHER

NO LEAD

.5 mm

DUAL

3.7 mm

MTA36ASF4G72PZ-2G6B2 by Micron Technology

MTA36ASF4G72PZ-2G6B2

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Sequential Burst Length: 8;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1333 MHz

COMMON

8

R-XDMA-N288

133.35 mm

309237645312 bit

DDR4 DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

.792 Amp

3996 mA

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA9ASF1G72PZ-2G9E1 by Micron Technology

MTA9ASF1G72PZ-2G9E1

Micron Technology

Micron Technology's MTA9ASF1G72PZ-2G9E1 is a DDR4 DRAM MODULE with 1GX72 organization, operating at up to 1466 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in servers or data centers.

SINGLE BANK PAGE BURST

1466 MHz

COMMON

8

R-XDMA-N288

133.35 mm

77309411328 bit

DDR4 DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

.198 Amp

1665 mA

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PZ-2G9E1 by Micron Technology

MTA18ASF2G72PZ-2G9E1

Micron Technology

Micron Technology's MTA18ASF2G72PZ-2G9E1 is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1466 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in servers or data centers.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1466 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

8

.396 Amp

3870 mA

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA36ASF4G72PZ-3G2E7 by Micron Technology

MTA36ASF4G72PZ-3G2E7

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1612 MHz

COMMON

8

R-XDMA-N288

133.35 mm

309237645312 bit

DDR4 DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

.792 Amp

4536 mA

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA8ATF1G64AZ-2G3A1 by Micron Technology

MTA8ATF1G64AZ-2G3A1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.2;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1204 MHz

COMMON

8

R-XDMA-N288

133.35 mm

68719476736 bit

DDR4 DRAM MODULE

64

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.7 mm

MTA8ATF1G64AZ-2G6E1 by Micron Technology

MTA8ATF1G64AZ-2G6E1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Width: 2.7 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1333 MHz

COMMON

8

R-XDMA-N288

133.35 mm

68719476736 bit

DDR4 DRAM MODULE

64

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.7 mm

MTA8ATF1G64AZ-3G2E1 by Micron Technology

MTA8ATF1G64AZ-3G2E1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1612 MHz

COMMON

8

R-XDMA-N288

133.35 mm

68719476736 bit

DDR4 DRAM MODULE

64

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.7 mm

MTA18ASF2G72PDZ-2G6E1 by Micron Technology

MTA18ASF2G72PDZ-2G6E1

Micron Technology

Micron's MTA18ASF2G72PDZ-2G6E1 DDR4 DRAM module features 2GX72 organization, 1333 MHz clock frequency, and 154618822656-bit memory density. Ideal for servers, data centers, and high-performance computing applications requiring synchronous operation and self-refresh capabilities.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1333 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PDZ-2G9E1 by Micron Technology

MTA18ASF2G72PDZ-2G9E1

Micron Technology

Micron Technology's MTA18ASF2G72PDZ-2G9E1 is a DDR4 DRAM MODULE with 2GX72 organization, 1466 MHz clock frequency, and 154618822656-bit memory density. It operates synchronously at 1.2V, featuring dual-bank page burst access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1466 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PZ-3G2E2 by Micron Technology

MTA18ASF2G72PZ-3G2E2

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

8

.396 Amp

4140 mA

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PDZ-2G3D1 by Micron Technology

MTA18ASF2G72PDZ-2G3D1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1204 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA36ASF4G72PZ-2G3D1 by Micron Technology

MTA36ASF4G72PZ-2G3D1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; JESD-30 Code: R-XDMA-N288;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1204 MHz

COMMON

8

R-XDMA-N288

133.35 mm

309237645312 bit

DDR4 DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA36ASF4G72PZ-2G9E2 by Micron Technology

MTA36ASF4G72PZ-2G9E2

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1466 MHz

COMMON

8

R-XDMA-N288

133.35 mm

309237645312 bit

DDR4 DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

.792 Amp

4266 mA

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ADF2G72AZ-3G2R1 by Micron Technology

MTA18ADF2G72AZ-3G2R1

Micron Technology

DDR4 DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD; Maximum Supply Current: 1737 mA;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1612.9 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

8

.54 Amp

1737 mA

1.26 V

1.14 V

1.2

NO

CMOS

NO LEAD

DUAL

3.9 mm

MTA8ATF2G64AZ-3G2F1 by Micron Technology

MTA8ATF2G64AZ-3G2F1

Micron Technology

MTA8ATF2G64AZ-3G2F1 by Micron Technology is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1600 MHz. It features a memory width of 64 bits and density of 137.44 Gb, suitable for applications requiring high-speed synchronous memory like servers and workstations.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

R-XDMA-N288

133.35 mm

137438953472 bit

DDR4 DRAM MODULE

64

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.25 mm

YES

.304 Amp

1336 mA

1.2

NO

CMOS

NO LEAD

DUAL

MTA18ASF4G72AZ-3G2F1 by Micron Technology

MTA18ASF4G72AZ-3G2F1

Micron Technology

DDR4 DRAM MODULE; No. of Terminals: 288; Terminal Form: NO LEAD; No. of Words: 4294967296 words; Organization: 4GX72; Package Body Material: UNSPECIFIED;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

R-XDMA-N288

309237645312 bit

DDR4 DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

UNSPECIFIED

YES

NO

CMOS

NO LEAD

DUAL

MTA18ADF4G72PZ-3G2F1 by Micron Technology

MTA18ADF4G72PZ-3G2F1

Micron Technology

DDR4 DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 95 Cel; Additional Features: AUTO/SELF REFRESH;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

R-XDMA-N288

309237645312 bit

DDR4 DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

.756 Amp

1845 mA

1.2

NO

CMOS

NO LEAD

DUAL

MTA18ASF4G72HZ-3G2F1 by Micron Technology

MTA18ASF4G72HZ-3G2F1

Micron Technology

Micron Technology's MTA18ASF4G72HZ-3G2F1 is a DDR4 DRAM module with 4GX72 organization, operating at 1612.9 MHz. It features synchronous operation, self-refresh capability, and a common I/O type. Ideal for high-performance computing applications requiring fast data processing and storage.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1612.9 MHz

COMMON

R-XZMA-N260

69.6 mm

309237645312 bit

DDR4 DRAM MODULE

72

1

1

260

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

.684 Amp

1845 mA

1.2

NO

CMOS

NO LEAD

ZIG-ZAG

3.7 mm

MTA16ATF4G64HZ-3G2F1 by Micron Technology

MTA16ATF4G64HZ-3G2F1

Micron Technology

Micron's MTA16ATF4G64HZ-3G2F1 is a DDR4 DRAM module with 4GX64 organization, 64-bit memory width, and 274877906944 bit memory density. It operates synchronously with self-refresh capability and dual bank page burst access mode. Ideal for applications requiring high-speed data processing in compact systems.

DUAL BANK PAGE BURST

AUTO REFRESH AND SELF REFRESH; WIDTH MAX

R-XDMA-N260

69.6 mm

274877906944 bit

DDR4 DRAM MODULE

64

1

1

260

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX64

UNSPECIFIED

DIMM

DIMM260,20

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

NO

CMOS

NO LEAD

.5 mm

DUAL

3.7 mm

MTA36ASF4G72PBZ-3G2E1 by Micron Technology

MTA36ASF4G72PBZ-3G2E1

Micron Technology

DDR4 DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Width: 72;

DUAL BANK PAGE BURST

1600 MHz

COMMON

R-XDMA-N288

309237645312 bit

DDR4 DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

105 Cel

-40 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

8192

YES

.72 Amp

4698 mA

1.26 V

1.14 V

1.2

NO

CMOS

DUAL