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DDR DRAM MODULE DRAM 285

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MTA72ASS8G72LZ-2G6B2 by Micron Technology

MTA72ASS8G72LZ-2G6B2

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

618475290624 bit

DDR DRAM MODULE

72

1

1

288

8589934592 words

8G

SYNCHRONOUS

85 Cel

0 Cel

8GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.6 mm

DUAL

3.9 mm

MTA9ASF1G72PZ-2G6D1 by Micron Technology

MTA9ASF1G72PZ-2G6D1

Micron Technology

Micron Technology's MTA9ASF1G72PZ-2G6D1 is a 1GX72 DDR DRAM MODULE with 1073741824 words, operating at 1.2V. It features SYNCHRONOUS mode, SELF REFRESH capability, and SINGLE BANK PAGE BURST access. Ideal for high-density memory applications requiring reliable performance in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.6 mm

DUAL

NOT SPECIFIED

3.9 mm

MTA18ASF2G72PF1Z-2G6V21AB by Micron Technology

MTA18ASF2G72PF1Z-2G6V21AB

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 72;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

NOT SPECIFIED

5.8 mm

MTA9ADF1G72AZ-2G6B1 by Micron Technology

MTA9ADF1G72AZ-2G6B1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Pitch: .6 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.6 mm

DUAL

2.7 mm

MT18KSF1G72AZ-1G6E1 by Micron Technology

MT18KSF1G72AZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Position: DUAL;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX

R-XDMA-N240

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

4 mm

MTA9ASF51272PZ-2G1A2 by Micron Technology

MTA9ASF51272PZ-2G1A2

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

288

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA16ATF1G64AZ-2G6B1 by Micron Technology

MTA16ATF1G64AZ-2G6B1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA144ASQ16G72PSZ-2S6G1 by Micron Technology

MTA144ASQ16G72PSZ-2S6G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

1236950581248 bit

DDR DRAM MODULE

72

1

1

288

17179869184 words

16G

SYNCHRONOUS

85 Cel

0 Cel

16GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA36ASF2G72PZ-2G1A2 by Micron Technology

MTA36ASF2G72PZ-2G1A2

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Position: DUAL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA36ASF2G72PZ-2G1B1 by Micron Technology

MTA36ASF2G72PZ-2G1B1

Micron Technology

Micron Technology's MTA36ASF2G72PZ-2G1B1 is a DDR DRAM MODULE with 2GX72 organization and 72-bit memory width. Operating at 1.2V, it offers 154618822656 bits of memory density. Ideal for applications requiring synchronous operation and self-refresh capabilities in microelectronic assemblies.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA36ASF2G72PZ-2G3A3 by Micron Technology

MTA36ASF2G72PZ-2G3A3

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Self Refresh: YES;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA36ASF2G72PZ-2G3B1 by Micron Technology

MTA36ASF2G72PZ-2G3B1

Micron Technology

Micron Technology's MTA36ASF2G72PZ-2G3B1 is a DDR DRAM MODULE with 2GX72 organization, 72-bit memory width, and 154.6 Gb density. Operating in synchronous mode at 1.2V, it suits applications requiring high-speed data processing and storage in servers or workstations.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA72ASS8G72PSZ-2S6G1 by Micron Technology

MTA72ASS8G72PSZ-2S6G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.26 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

618475290624 bit

DDR DRAM MODULE

72

1

1

288

8589934592 words

8G

SYNCHRONOUS

85 Cel

0 Cel

8GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MT8KTF25664HZ-1G6K1 by Micron Technology

MT8KTF25664HZ-1G6K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX

800 MHz

COMMON

R-XZMA-N204

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

1248 mA

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT18KSF1G72HZ-1G6E2 by Micron Technology

MT18KSF1G72HZ-1G6E2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XZMA-N204

e4

67.6 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

204

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

ZIG-ZAG

3.8 mm

MTA16ATF2G64AZ-3G2E1 by Micron Technology

MTA16ATF2G64AZ-3G2E1

Micron Technology

Micron Technology's MTA16ATF2G64AZ-3G2E1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA16ATF2G64HZ-3G2E1 by Micron Technology

MTA16ATF2G64HZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA18ADF2G72AZ-3G2E1 by Micron Technology

MTA18ADF2G72AZ-3G2E1

Micron Technology

Micron's MTA18ADF2G72AZ-3G2E1 DDR DRAM Module features 2GX72 organization, 154618822656-bit memory density, and operates at 1.2V. Ideal for applications requiring high-speed synchronous memory with dual bank page burst access mode in microelectronic assemblies.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PZ-3G2E1 by Micron Technology

MTA18ASF2G72PZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA4ATF51264AZ-3G2E1 by Micron Technology

MTA4ATF51264AZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

288

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.7 mm

MTA4ATF51264HZ-3G2E1 by Micron Technology

MTA4ATF51264HZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

SINGLE BANK PAGE BURST

WD-MAX

R-XZMA-N260

69.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

260

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.13 mm

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

NOT SPECIFIED

2.5 mm

MTA8ATF1G64HZ-3G2E1 by Micron Technology

MTA8ATF1G64HZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

NOT SPECIFIED

3.7 mm

MTA9ADF1G72PZ-2G6D1 by Micron Technology

MTA9ADF1G72PZ-2G6D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA9ASF1G72PKIZ-3G2E1 by Micron Technology

MTA9ASF1G72PKIZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

80 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

INDUSTRIAL

NO LEAD

DUAL

4 mm

MTA9ASF1G72PZ-3G2E1 by Micron Technology

MTA9ASF1G72PZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MT18KSF51272HZ-1G6K2 by Micron Technology

MT18KSF51272HZ-1G6K2

Micron Technology

Micron Technology's MT18KSF51272HZ-1G6K2 is a 512MX72 DDR DRAM MODULE with 38654705664 bit memory density. It operates synchronously at 1.35V, featuring self-refresh capability and dual bank page burst access mode. Ideal for commercial applications requiring high-speed and reliable memory performance.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MTA9ADF1G72PZ-3G2E1 by Micron Technology

MTA9ADF1G72PZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.26 V;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA9ADF1G72AZ-3G2E1 by Micron Technology

MTA9ADF1G72AZ-3G2E1

Micron Technology

Micron Technology's MTA9ADF1G72AZ-3G2E1 is a 1GX72 DDR DRAM MODULE with 1073741824 words and 77309411328 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.7 mm

MT36KSF2G72PZ-1G6E1 by Micron Technology

MT36KSF2G72PZ-1G6E1

Micron Technology

Micron Technology's MT36KSF2G72PZ-1G6E1 is a 2GX72 DDR DRAM MODULE with 154618822656 bit memory density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

8

R-XDMA-N240

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

OTHER

NO LEAD

1 mm

DUAL

NOT SPECIFIED

4 mm

MT16HTF25664HIZ-667M1 by Micron Technology

MT16HTF25664HIZ-667M1

Micron Technology

Micron Technology's MT16HTF25664HIZ-667M1 is a 256MX64 DDR DRAM MODULE with 17179869184 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring reliable, high-speed memory performance in a compact MICROELECTRONIC ASSEMBLY package.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

200

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

INDUSTRIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT36KSF2G72PZ-1G6N1 by Micron Technology

MT36KSF2G72PZ-1G6N1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX

R-XDMA-N240

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

4 mm

MTA36ASF4G72PZ-2G3A1 by Micron Technology

MTA36ASF4G72PZ-2G3A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Access Mode: DUAL BANK PAGE BURST;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

309237645312 bit

DDR DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA36ASF4G72PZ-2G3B1 by Micron Technology

MTA36ASF4G72PZ-2G3B1

Micron Technology

Micron Technology's MTA36ASF4G72PZ-2G3B1 is a 4GX72 DDR DRAM MODULE with 309.2 Gb memory density and operates at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for high-performance computing applications requiring reliable and fast memory solutions.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

309237645312 bit

DDR DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MT16KTF1G64HZ-1G9E1 by Micron Technology

MT16KTF1G64HZ-1G9E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

204

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT16KTF1G64HZ-1G9P1 by Micron Technology

MT16KTF1G64HZ-1G9P1

Micron Technology

MT16KTF1G64HZ-1G9P1 by Micron Technology is a 1GX64 DDR DRAM MODULE with 64-bit memory width and 68719476736-bit memory density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

204

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

30

3.8 mm

MT16KTF2G64HZ-1G6A1 by Micron Technology

MT16KTF2G64HZ-1G6A1

Micron Technology

Micron Technology's MT16KTF2G64HZ-1G6A1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

204

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

30

3.8 mm

MT18KSF2G72HZ-1G6A2 by Micron Technology

MT18KSF2G72HZ-1G6A2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.45 V;

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

204

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MTA18ADF2G72PZ-3G2E1 by Micron Technology

MTA18ADF2G72PZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.26 V;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

NOT SPECIFIED

3.9 mm

MTA4ATF51264HZ-2G6E1 by Micron Technology

MTA4ATF51264HZ-2G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

WD-MAX

R-XZMA-N260

69.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

260

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

2.5 mm

MT4VDDT1664HY-335K1 by Micron Technology

MT4VDDT1664HY-335K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

167 MHz

COMMON

R-XDMA-N200

67.6 mm

1073741824 bit

DDR DRAM MODULE

64

1

1

200

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

2.5

Not Qualified

8192

31.9 mm

YES

DRAMs

1080 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

NOT SPECIFIED

2.45 mm

AS4C512M16D3LA-10BCNTR by Alliance Memory

AS4C512M16D3LA-10BCNTR

Alliance Memory

Alliance Memory's AS4C512M16D3LA-10BCNTR is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from 0 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13.5 mm

8589934592 bit

DDR DRAM MODULE

16

3

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.425 V

1.275 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LA-10BCN by Alliance Memory

AS4C512M16D3LA-10BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13.5 mm

8589934592 bit

DDR DRAM MODULE

16

3

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.425 V

1.275 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MTA8ATF2G64HZ-3G2B1 by Micron Technology

MTA8ATF2G64HZ-3G2B1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA16ATF2G64HZ-2G1B1 by Micron Technology

MTA16ATF2G64HZ-2G1B1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Shape: RECTANGULAR; No. of Functions: 1; Maximum Operating Temperature: 95 Cel;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA16ATF2G64HZ-2G6E1 by Micron Technology

MTA16ATF2G64HZ-2G6E1

Micron Technology

Micron Technology's MTA16ATF2G64HZ-2G6E1 is a DDR DRAM MODULE with 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact systems.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm