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SINGLE Bridge Rectifier Diodes 117

Bridge Rectifier Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
NTE5391 by Nte Electronics

NTE5391

Nte Electronics

NTE5391 by Nte Electronics is a BRIDGE RECTIFIER DIODE with 4 elements, 400V reverse test voltage, and 35A max output current. Ideal for applications requiring high power rectification in electronic circuits. Operates b/w -55°C to 150°C temperature range efficiently.

400 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-XSIP-T4

300 A

4

1

4

150 Cel

-55 Cel

35 A

UNSPECIFIED

RECTANGULAR

IN-LINE

400 V

5 uA

400 V

NO

THROUGH-HOLE

SINGLE

NTE5392 by Nte Electronics

NTE5392

Nte Electronics

NTE5392 by Nte Electronics is a BRIDGE RECTIFIER DIODE with 4 elements, capable of handling 35A output current and 600V reverse voltage. Ideal for applications requiring high power rectification in industrial electronics, automation systems, and power supplies.

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-XSIP-T4

300 A

4

1

4

150 Cel

-55 Cel

35 A

UNSPECIFIED

RECTANGULAR

IN-LINE

600 V

5 uA

600 V

NO

THROUGH-HOLE

SINGLE

NTE5393 by Nte Electronics

NTE5393

Nte Electronics

NTE5393 by Nte Electronics is a BRIDGE RECTIFIER DIODE with 4 elements, 800V reverse test voltage, and 35A max output current. Ideal for applications requiring high voltage rectification such as power supplies and industrial equipment due to its robust design and wide operating temperature range from -55°C to 150°C.

800 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-XSIP-T4

300 A

4

1

4

150 Cel

-55 Cel

35 A

UNSPECIFIED

RECTANGULAR

IN-LINE

800 V

5 uA

800 V

NO

THROUGH-HOLE

SINGLE

NTE5394 by Nte Electronics

NTE5394

Nte Electronics

NTE5394 by Nte Electronics is a BRIDGE RECTIFIER DIODE with 4 elements, capable of handling up to 35A output current and 1000V reverse voltage. Ideal for applications requiring high power rectification in industrial electronics, automation systems, and power supplies.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-XSIP-T4

300 A

4

1

4

150 Cel

-55 Cel

35 A

UNSPECIFIED

RECTANGULAR

IN-LINE

1000 V

5 uA

1000 V

NO

THROUGH-HOLE

SINGLE

TS6P07G by Taiwan Semiconductor

TS6P07G

Taiwan Semiconductor

TS6P07G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, max output current of 6A, and max repetitive peak reverse voltage of 1000V. It is used in applications requiring high voltage rectification such as power supplies and battery chargers.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PSFM-T4

e3

1

150 A

4

1

4

150 Cel

-55 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

1000 V

10 uA

Bridge Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

GSIB2520N-M3/45 by Vishay Intertechnology

GSIB2520N-M3/45

Vishay Intertechnology

GSIB2520N-M3/45 by Vishay Intertechnology is a bridge rectifier diode with 4 elements, max output current of 3.5A, and max repetitive peak reverse voltage of 200V. It is used in applications requiring high efficiency power conversion and operates within a temperature range of -55 to 150°C. The package style is flange mount with through-hole terminals for easy installation.

200 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

350 A

4

1

4

150 Cel

-55 Cel

3.5 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

UL RECOGNIZED

200 V

Bridge Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GBL02-M3/51 by Vishay Intertechnology

GBL02-M3/51

Vishay Intertechnology

Vishay Intertechnology's GBL02-M3/51 is a bridge rectifier diode with 4 elements, max output current of 3A, and max repetitive peak reverse voltage of 200V. Ideal for applications requiring high efficiency AC to DC conversion in electronic circuits. Operates within -55°C to 150°C temperature range.

200 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSIP-T4

e3

150 A

4

1

4

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

UL RECOGNIZED

200 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBU601D2G by Taiwan Semiconductor

GBU601D2G

Taiwan Semiconductor

GBU601D2G by Taiwan Semiconductor is a Bridge Rectifier Diode with 4 elements, capable of handling up to 6A output current. It operates b/w -55°C to 150°C and has a max breakdown voltage of 50V. Ideal for applications requiring rectification in electronic circuits.

50 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

e3

175 A

4

1

4

150 Cel

-55 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

AEC-Q101; UL RECOGNIZED

50 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

GBU1006F by Hy Electronic

GBU1006F

Hy Electronic

Hy Electronic GBU1006F is a bridge rectifier diode with 4 elements, max output current of 3A, and max repetitive peak reverse voltage of 600V. It operates b/w -55°C to 150°C, making it suitable for applications requiring high voltage rectification in various electronic circuits.

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

220 A

4

1

4

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

600 V

NO

THROUGH-HOLE

SINGLE

VS-2KBB100R by Vishay Intertechnology

VS-2KBB100R

Vishay Intertechnology

VS-2KBB100R by Vishay Intertechnology is a bridge rectifier diode with 4 elements, max output current of 1.9A, and max reverse voltage of 1000V. Ideal for applications requiring rectification of AC to DC power sources in electronic circuits.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSIP-W4

52 A

4

1

4

150 Cel

-40 Cel

1.9 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

1000 V

NO

WIRE

SINGLE

NOT SPECIFIED

VS-2KBB60R by Vishay Intertechnology

VS-2KBB60R

Vishay Intertechnology

VS-2KBB60R by Vishay Intertechnology is a bridge rectifier diode with 4 elements. It has a max output current of 1.9A and can handle a max repetitive peak reverse voltage of 600V. This diode is commonly used in applications requiring rectification of AC to DC power.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSIP-W4

52 A

4

1

4

150 Cel

-40 Cel

1.9 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

600 V

NO

WIRE

SINGLE

NOT SPECIFIED

VS-2KBP04 by Vishay Intertechnology

VS-2KBP04

Vishay Intertechnology

VS-2KBP04 by Vishay Intertechnology is a bridge rectifier diode with 4 elements, capable of handling a max output current of 2A and a max repetitive peak reverse voltage of 400V. Its package body material is plastic/epoxy, making it suitable for applications requiring reliable rectification in electronic circuits. With an operating temperature range from -40°C to 150°C, this diode is ideal for various industrial and consumer electronics applications.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSIP-W4

63 A

4

1

4

150 Cel

-40 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

400 V

NO

WIRE

SINGLE

NOT SPECIFIED

KBU807GT0G by Taiwan Semiconductor

KBU807GT0G

Taiwan Semiconductor

KBU807GT0G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, capable of handling up to 8A output current and 1000V reverse voltage. It features a plastic/epoxy package body material and matte tin terminal finish, suitable for applications requiring high voltage rectification in temperature range from -55°C to 150°C.

1000 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PSFM-W4

e3

200 A

4

1

4

150 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

1000 V

5 uA

1000 V

NO

MATTE TIN

WIRE

SINGLE

TS15P05GC2G by Taiwan Semiconductor

TS15P05GC2G

Taiwan Semiconductor

TS15P05GC2G by Taiwan Semiconductor is a 4-element bridge rectifier diode with max output current of 15A and max repetitive peak reverse voltage of 600V. It operates b/w -55°C to 150°C, making it suitable for applications requiring high voltage rectification in various electronic circuits. The package style is flange mount with matte tin terminal finish, conforming to UL standards.

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

e3

240 A

4

1

4

150 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

250

UL RECOGNIZED

600 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

KBU406GT0G by Taiwan Semiconductor

KBU406GT0G

Taiwan Semiconductor

KBU406GT0G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, capable of handling up to 4A output current and 800V breakdown voltage. It features a plastic/epoxy package body material, matte tin terminal finish, and operates b/w -55°C to 150°C. Ideal for applications requiring reliable rectification in electronic circuits.

800 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-W4

e3

150 A

4

1

4

150 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

800 V

NO

MATTE TIN

WIRE

SINGLE

FBE22-06N1 by IXYS Corporation

FBE22-06N1

IXYS Corporation

FBE22-06N1 by IXYS Corporation is a bridge rectifier diode with 4 elements, capable of handling up to 20A output current and 600V peak reverse voltage. It operates b/w -55°C to 150°C, making it suitable for various power supply applications due to its high power dissipation of 35W and avalanche technology.

HIGH RELIABILITY

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

2.2 V

R-PSIP-T5

e1

40 A

4

1

5

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

35 W

Not Qualified

600 V

Bridge Rectifier Diodes

NO

AVALANCHE

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

GBU6J-E3/51 by Vishay Intertechnology

GBU6J-E3/51

Vishay Intertechnology

Vishay Intertechnology GBU6J-E3/51 is a bridge rectifier diode with 4 elements, 600V reverse test voltage, and 3.8A max output current. Ideal for applications requiring high voltage rectification in electronic circuits. Operates b/w -55°C to 150°C temperature range with UL recognized reference standard.

600 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

e3

175 A

4

1

4

150 Cel

-55 Cel

3.8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

UL RECOGNIZED

600 V

5 uA

600 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

FUS45-0045B by IXYS Corporation

FUS45-0045B

IXYS Corporation

IXYS Corporation's FUS45-0045B is a 6-element bridge rectifier diode with a max output current of 20A and max repetitive peak reverse voltage of 45V. It operates b/w -55°C to 150°C, making it suitable for applications requiring high power dissipation up to 40W in various electronic circuits.

HIGH RELIABILITY

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.65 V

R-PSIP-T5

e1

150 A

6

3

5

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

40 W

Not Qualified

UL RECOGNIZED

45 V

Bridge Rectifier Diodes

NO

SCHOTTKY

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

3N259-E4/72 by Vishay Intertechnology

3N259-E4/72

Vishay Intertechnology

Vishay Intertechnology's 3N259-E4/72 is a bridge rectifier diode with 4 elements, capable of handling up to 2A output current and 1000V peak reverse voltage. It operates b/w -55°C to 165°C, making it suitable for industrial power supply applications requiring high voltage rectification in harsh environments.

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSIP-W4

e4

60 A

4

1

4

165 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Not Qualified

UL RECOGNIZED

1000 V

NO

SILVER

WIRE

SINGLE

GUO40-16NO1 by IXYS Corporation

GUO40-16NO1

IXYS Corporation

IXYS Corporation's GUO40-16NO1 is a bridge rectifier diode with 6 elements, capable of handling up to 1600V and 6A. It operates b/w -40°C to 175°C, ideal for applications requiring high voltage and current rectification in industrial settings. The package style is flange mount with isolated case connection, meeting UL standards for reliability.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PSFM-T5

340 A

6

3

5

175 Cel

-40 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

35 W

Not Qualified

UL RECOGNIZED

1600 V

Bridge Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GBU4K-M3/51 by Vishay Intertechnology

GBU4K-M3/51

Vishay Intertechnology

Vishay Intertechnology's GBU4K-M3/51 is a bridge rectifier diode with 800V breakdown voltage and 3A output current. It operates b/w -55°C to 150°C, making it suitable for various applications requiring high voltage rectification in industrial settings. The diode features a plastic/epoxy package body material and is UL recognized for quality assurance.

800 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

150 A

4

1

4

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

800 V

Bridge Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

GBU4M-M3/45 by Vishay Intertechnology

GBU4M-M3/45

Vishay Intertechnology

Vishay Intertechnology's GBU4M-M3/45 is a bridge rectifier diode with 4 elements, capable of handling up to 3A output current and 1000V breakdown voltage. It operates b/w -55°C to 150°C, making it suitable for applications requiring high voltage rectification in various electronic circuits.

1000 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

150 A

4

1

4

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

1000 V

Bridge Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

GBU4M-M3/51 by Vishay Intertechnology

GBU4M-M3/51

Vishay Intertechnology

Vishay Intertechnology's GBU4M-M3/51 is a bridge rectifier diode with 4 elements, capable of handling up to 3A output current and 1000V breakdown voltage. Ideal for applications requiring high efficiency power conversion in temperatures ranging from -55°C to 150°C.

1000 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

150 A

4

1

4

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

1000 V

Bridge Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

KBP204GC2 by Taiwan Semiconductor

KBP204GC2

Taiwan Semiconductor

KBP204GC2 by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, max output current of 2A, and max repetitive peak reverse voltage of 400V. It is used in applications requiring reliable rectification such as power supplies and battery chargers due to its UL recognized reference standard and operating temperature range from -55°C to 150°C.

400 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

e3

60 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

400 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

KBP207GC2 by Taiwan Semiconductor

KBP207GC2

Taiwan Semiconductor

KBP207GC2 by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, capable of handling up to 2A output current and 1000V peak reverse voltage. It is designed for applications requiring high reliability in a wide temperature range (-55°C to 150°C), such as power supplies, industrial controls, and automation systems.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

e3

60 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

1000 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBU10K-BP by Micro Commercial Components

GBU10K-BP

Micro Commercial Components

GBU10K-BP by Micro Commercial Components is a bridge rectifier diode with 4 elements, max output current of 10A, and min breakdown voltage of 800V. It is ideal for applications requiring high efficiency power conversion in electronic circuits. With a package style of flange mount and UL recognized reference standard, it ensures reliable performance at temperatures up to 150°C.

800 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

e3

1

200 A

4

1

4

150 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

800 V

5 uA

Bridge Rectifier Diodes

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GBJ1010-BP by Micro Commercial Components

GBJ1010-BP

Micro Commercial Components

GBJ1010-BP by Micro Commercial Components is a bridge rectifier diode with 4 elements, max output current of 10A, and max repetitive peak reverse voltage of 1000V. It is used in applications requiring high voltage rectification such as power supplies and industrial equipment due to its max operating temperature of 150°C.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

1000 V

10 uA

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

GBJ2510-BP by Micro Commercial Components

GBJ2510-BP

Micro Commercial Components

GBJ2510-BP by Micro Commercial Components is a bridge rectifier diode with 4 elements, capable of handling up to 25A output current and 1000V repetitive peak reverse voltage. It features a max operating temperature of 150°C and matte tin terminal finish. Ideal for applications requiring high voltage rectification in electronic circuits.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

e3

1

350 A

4

1

4

150 Cel

25 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

1000 V

10 uA

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

KBP306G-BP by Micro Commercial Components

KBP306G-BP

Micro Commercial Components

KBP306G-BP by Micro Commercial Components is a bridge rectifier diode with 4 elements, capable of handling up to 3A output current and 600V repetitive peak reverse voltage. It features a max forward voltage of 1.1V and operates at temperatures up to 150°C. Ideal for applications requiring reliable rectification in electronic circuits.

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PSIP-T4

e3

1

80 A

4

1

4

150 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

Not Qualified

UL RECOGNIZED

600 V

10 uA

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

GBJ10005-F by Diodes Incorporated

GBJ10005-F

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

50 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ1001-F by Diodes Incorporated

GBJ1001-F

Diodes Incorporated

GBJ1001-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 10A, and max repetitive peak reverse voltage of 100V. It is used in applications requiring rectification of AC to DC power such as power supplies and motor drives. Operating temp range: -65°C to 150°C.

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

100 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ1002-F by Diodes Incorporated

GBJ1002-F

Diodes Incorporated

GBJ1002-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 10A, and max repetitive peak reverse voltage of 200V. Ideal for applications requiring high efficiency AC to DC conversion in electronic circuits. Operates b/w -65°C to 150°C temperature range.

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

200 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ1004-F by Diodes Incorporated

GBJ1004-F

Diodes Incorporated

GBJ1004-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 10A, and max repetitive peak reverse voltage of 400V. It is used in applications requiring rectification of AC to DC power sources, such as power supplies and motor drives.

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

400 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ1008-F by Diodes Incorporated

GBJ1008-F

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

800 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ1010-F by Diodes Incorporated

GBJ1010-F

Diodes Incorporated

GBJ1010-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 10A, and max repetitive peak reverse voltage of 1000V. It is used in applications requiring high voltage rectification such as power supplies and industrial equipment due to its UL recognized standard and isolated case connection.

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

1000 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ20005-F by Diodes Incorporated

GBJ20005-F

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

50 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

240 A

4

1

4

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

50 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ2002-F by Diodes Incorporated

GBJ2002-F

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

200 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

240 A

4

1

4

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

200 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ2004-F by Diodes Incorporated

GBJ2004-F

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

400 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

240 A

4

1

4

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

400 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ2008-F by Diodes Incorporated

GBJ2008-F

Diodes Incorporated

GBJ2008-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 20A, and max repetitive peak reverse voltage of 800V. It is used in applications requiring high voltage rectification such as power supplies and motor drives due to its UL recognized standard and isolated case connection.

800 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

240 A

4

1

4

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

800 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ2010-F by Diodes Incorporated

GBJ2010-F

Diodes Incorporated

GBJ2010-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 20A, and max repetitive peak reverse voltage of 1000V. It is used in applications requiring high voltage rectification such as power supplies and motor drives due to its UL recognized standard and isolated case connection. Operating temperature ranges from -55°C to 150°C making it suitable for various industrial environments.

1000 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.05 V

R-PSFM-T4

e3

1

240 A

4

1

4

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

1000 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ6005-F by Diodes Incorporated

GBJ6005-F

Diodes Incorporated

GBJ6005-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 6A, and max repetitive peak reverse voltage of 50V. It is used in applications requiring AC to DC conversion such as power supplies and motor drives due to its high efficiency and UL recognition.

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

50 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ601-F by Diodes Incorporated

GBJ601-F

Diodes Incorporated

GBJ601-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 6A, and max repetitive peak reverse voltage of 100V. It is used in applications requiring rectification of AC to DC power sources in electronic circuits.

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

100 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ602-F by Diodes Incorporated

GBJ602-F

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

200 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ604-F by Diodes Incorporated

GBJ604-F

Diodes Incorporated

GBJ604-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 6A, and max repetitive peak reverse voltage of 400V. It is used in applications requiring rectification of AC to DC power sources, such as power supplies and motor drives. Operating temperature ranges from -65°C to 150°C make it suitable for various environments.

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

400 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ608-F by Diodes Incorporated

GBJ608-F

Diodes Incorporated

GBJ608-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 6A, and max repetitive peak reverse voltage of 800V. It is used in applications requiring rectification of AC to DC power sources, such as power supplies and motor drives. With a package style of flange mount and operating temperature range from -65°C to 150°C, it offers reliable performance in various electronic systems.

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

800 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBJ610-F by Diodes Incorporated

GBJ610-F

Diodes Incorporated

GBJ610-F by Diodes Inc. is a bridge rectifier diode with 4 elements, capable of handling up to 6A output current and 1000V peak repetitive reverse voltage. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high voltage rectification in electronic circuits.

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

e3

1

170 A

4

1

4

150 Cel

-65 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

1000 V

Bridge Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GBO25-12NO1 by IXYS Corporation

GBO25-12NO1

IXYS Corporation

GBO25-12NO1 by IXYS Corp is a bridge rectifier diode with 4 elements, max output current of 5A, and max repetitive peak reverse voltage of 1200V. It is used in applications requiring high power dissipation up to 16W at temperatures up to 175°C. The diode's silicon material and flange mount package make it suitable for industrial electronics.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.92 V

R-PSFM-T4

340 A

4

1

4

175 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

16 W

Not Qualified

1200 V

Bridge Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GBO25-16NO1 by IXYS Corporation

GBO25-16NO1

IXYS Corporation

GBO25-16NO1 by IXYS Corporation is a bridge rectifier diode with 4 elements, max output current of 5A, and max repetitive peak reverse voltage of 1600V. It is used in applications requiring high power dissipation up to 16W, such as industrial power supplies and motor drives due to its silicon diode element material.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.92 V

R-PSFM-T4

340 A

4

1

4

175 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

16 W

Not Qualified

1600 V

Bridge Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED