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GBO25-12NO1

IXYS Corporation

GBO25-12NO1 by IXYS Corporation

GBO25-12NO1 by IXYS Corp is a bridge rectifier diode with 4 elements, max output current of 5A, and max repetitive peak reverse voltage of 1200V. It is used in applications requiring high power dissipation up to 16W at temperatures up to 175°C. The diode's silicon material and flange mount package make it suitable for industrial electronics.

Median Price

$12.250

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Arrow

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$2.668

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Mouser Electronics

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$11.320

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$7.550

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DigiKey

USA . 21 parts In-Stock

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$13.180

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$8.646

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$6.600

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Chip1Stop

Japan . 6 parts In-Stock

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Verical

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TME

Poland . 63 parts In-Stock

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$8.430

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Vyrian

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Nova Conductors

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IBS Electronics

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Ampacity Inc.

Singapore . 7 parts In-Stock

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$9.520

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Microchip USA

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$31.060

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Andel Nordic

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Continental Prestige Electronics

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Argo Parts USA

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iodParts Technologies Inc.

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Overview

Enhance your electronic projects with the GBO25-12NO1 Bridge Rectifier Diode by IXYS Corporation. Crafted from high-quality materials, this product offers exceptional performance and reliability. Perfect for a variety of applications, this bridge rectifier diode is a versatile component that provides efficient power conversion. Experience the value and benefits of this product as you create innovative designs with ease. Trust IXYS Corporation to deliver top-of-the-line components that exceed expectations. Elevate your projects with the GBO25-12NO1 and see the difference it can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to external elements, making the product suitable for a variety of applications.

Configuration: BRIDGE, 4 ELEMENTS

The bridge configuration with 4 elements allows for efficient rectification of AC signals, making it ideal for converting alternating current to direct current.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175°C, this bridge rectifier diode can withstand intense heat conditions without compromising performance.

Maximum Power Dissipation: 16 W

The high power dissipation capability of 16W ensures reliable operation under heavy load conditions without overheating.

Maximum Forward Voltage (VF): 0.92 V

With a low maximum forward voltage of 0.92V, this diode minimizes power losses and improves efficiency in voltage rectification applications.

Maximum Output Current: 5 A

The high maximum output current of 5A allows for the handling of large electrical loads, making it suitable for high-power applications.

Maximum Repetitive Peak Reverse Voltage: 1200 V

The high peak reverse voltage rating of 1200V ensures reliable performance in applications where reverse voltage spikes may occur.

Maximum Non-Repetitive Peak Forward Current: 340 A

The high non-repetitive peak forward current rating of 340A enables the diode to handle short-duration high-current surges, enhancing its overall robustness.

Technical Specifications

Bridge Rectifier Diodes GBO25-12NO1 attributes and parameters. Explore more Bridge Rectifier Diodes devices from IXYS Corporation

Specs

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.92 V

JESD-30 Code:

R-PSFM-T4

Maximum Non Repetitive Peak Forward Current:

340 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

16 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

GBO25-12NO1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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