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MDB10SV

Onsemi

MDB10SV by Onsemi

The Onsemi MDB10SV is a bridge rectifier diode with 4 elements, operating temperature range of -55 to 150°C. It has a max output current of 1.2A and breakdown voltage of 1000V, suitable for applications requiring high voltage rectification in compact spaces.

Median Price

$1.000

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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$1.000

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1,000

$1.000

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Vyrian

USA . 6,363 parts In-Stock

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6,363

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Greenchips

USA . 3,733 parts In-Stock

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Chip Stock

USA . 3,200 parts In-Stock

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Digiode

USA . 931 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,503 parts In-Stock

1+ parts

$0.037

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4,503

$0.037

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Argo Parts USA

USA . 1,157 parts In-Stock

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$0.139

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$0.135

1,157

$0.139

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$0.135

Corohmni

South Africa . 324 parts In-Stock

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$0.980

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324

$0.980

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Netroflash

USA . 500 parts In-Stock

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$1.000

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$0.980

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500

$1.000

$0.980

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Ampacity Inc.

Singapore . 50 parts In-Stock

1+ parts

$3.010

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50

$3.010

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Semicontronic

India . 50 parts In-Stock

1+ parts

$3.010

100+ parts

$2.935

1k+ parts

$2.920

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50

$3.010

$2.935

$2.920

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AZTECH Wire

Italy . 280 parts In-Stock

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$15.014

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280

$15.014

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Perfect Parts

USA . 9,213 parts In-Stock

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Legend Electronics Inc. (Excess)

USA . 9,021 parts In-Stock

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Kulean Microsystems

USA . 7,612 parts In-Stock

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TANS Electronics

Latvia . 7,172 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,968 parts In-Stock

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Problanco Electronics

Mexico . 3,843 parts In-Stock

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SupplyDigital Components

Austria . 3,605 parts In-Stock

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Supply Digital

USA . 2,003 parts In-Stock

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Corphita

USA . 1,403 parts In-Stock

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UHIMA Technologies

Türkiye . 231 parts In-Stock

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231

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Overview

Experience superior quality and reliability with the MDB10SV bridge rectifier diode by Onsemi. Manufactured by a trusted industry leader, this product offers exceptional performance and durability for a wide range of applications. Whether you're looking to improve efficiency in power supplies or enhance circuit designs, this small outline package with gull wing terminals provides a versatile solution. With a maximum operating temperature of 150°C and a minimum breakdown voltage of 1000V, the MDB10SV delivers outstanding value and benefits that meet your specific needs. Unlock new possibilities with this high-quality diode from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protects the diodes from external elements, making them suitable for various environments and applications.

Minimum Breakdown Voltage: 1000 V

The high minimum breakdown voltage ensures reliable operation and protection against voltage spikes, making it a safe choice for electronic circuits.

Maximum Output Current: 1.2 A

With a maximum output current of 1.2 A, this bridge rectifier diode can handle moderate to high power requirements in circuits, making it versatile for different applications.

Maximum Repetitive Peak Reverse Voltage: 1000 V

The high repetitive peak reverse voltage rating ensures the diode can handle reverse voltage without damage, making it ideal for rectifying AC currents in circuits.

Diode Element Material: SILICON

Silicon diodes are known for their efficiency and reliability in electronic circuits, ensuring consistent performance and longevity of the bridge rectifier diode.

Technical Specifications

Bridge Rectifier Diodes MDB10SV attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

1000 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.02 V

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MDB10SV Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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