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3N259-E4/72

Vishay Intertechnology

3N259-E4/72 by Vishay Intertechnology

Vishay Intertechnology's 3N259-E4/72 is a bridge rectifier diode with 4 elements, capable of handling up to 2A output current and 1000V peak reverse voltage. It operates b/w -55°C to 165°C, making it suitable for industrial power supply applications requiring high voltage rectification in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 6,762 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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6,762

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Vyrian

USA . 2,204 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,204

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-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 834 parts In-Stock

1+ parts

$10.244

100+ parts

-

1k+ parts

-

10k+ parts

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834

$10.244

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Bastille Electronics

Australia . 900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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900

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Overview

Enhance your electronic designs with the 3N259-E4/72 Bridge Rectifier Diode by Vishay Intertechnology. Known for their superior quality and reliability, Vishay products are trusted by professionals worldwide. This versatile diode is perfect for a variety of applications, offering customers the value of efficient power conversion and exceptional performance. Upgrade your projects with the 3N259-E4/72 and experience the benefits of Vishay Intertechnology's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the bridge rectifier diodes.

Maximum Output Current: 2 A

Capable of handling a maximum output current of 2A, making it suitable for a variety of electronic applications.

Maximum Repetitive Peak Reverse Voltage: 1000 V

With a high maximum reverse voltage, this bridge rectifier diode can withstand voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 60 A

Capable of handling high peak forward currents for short durations, making it reliable in high-power applications.

Technical Specifications

Bridge Rectifier Diodes 3N259-E4/72 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Vishay Intertechnology

Specs

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PSIP-W4

JESD-609 Code:

e4

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

165 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Surface Mount:

NO

Terminal Finish:

SILVER

Terminal Form:

Terminal Position:

Trade Compliance

3N259-E4/72 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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