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3N259

Onsemi

3N259 by Onsemi

3N259 by Onsemi is a Bridge Rectifier Diode with 4 elements, max reverse current of 5uA, and max output current of 2A. Ideal for applications requiring a diode element material of silicon, such as power supplies and rectification circuits. Operating temp ranges from -55 to 150 °C.

Median Price

$0.674

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 244 parts In-Stock

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$0.674

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$0.559

10k+ parts

$0.498

244

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$0.674

$0.559

$0.498

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Digiode

USA . 2,689 parts In-Stock

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$0.524

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$0.524

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Elite Semiconductor

USA . 9,450 parts In-Stock

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Vyrian

USA . 7,280 parts In-Stock

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Resion

USA . 436 parts In-Stock

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Electronic Expediters

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J & M Industries LLC

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Fibra_Brandt Electronic GMBH

Germany . 30 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 3,176 parts In-Stock

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$0.497

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Corohmni

South Africa . 50 parts In-Stock

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$0.552

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QUARKTWIN TECHNOLOGY LTD

USA . 26,460 parts In-Stock

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Metaverse IC Inc.

Canada . 10,607 parts In-Stock

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Problanco Electronics

Mexico . 5,588 parts In-Stock

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SupplyDigital Components

Austria . 5,469 parts In-Stock

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Supply Digital

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Glotronic Ltd.

UK . 2,300 parts In-Stock

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Northwest PG Solutions

USA . 1,758 parts In-Stock

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$4.361

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Kulean Microsystems

USA . 1,394 parts In-Stock

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TANS Electronics

Latvia . 968 parts In-Stock

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UHIMA Technologies

Türkiye . 795 parts In-Stock

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Native Components

USA . 218 parts In-Stock

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Assy Fe

Spain . 170 parts In-Stock

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Overview

Elevate your electronic projects with the 3N259 Bridge Rectifier Diode by Onsemi. Crafted with precision and quality in mind, this diode offers unparalleled performance and reliability for a wide range of applications. From power supplies to industrial equipment, this diode provides efficient rectification with minimal power loss. Experience peace of mind knowing that this UL Certified product meets the highest industry standards, while its durable construction ensures long-lasting functionality. Upgrade your projects today with the 3N259 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diodes, ensuring durability and reliability.

Maximum Reverse Current: 5 uA

Low reverse current helps in reducing power loss and improving efficiency.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without any issues, making it suitable for various applications.

Maximum Power Dissipation: 4.7 W

Can handle high power dissipation, making it suitable for demanding applications.

Reference Standard: UL CERTIFIED

Being UL certified ensures the product meets safety and quality standards.

Maximum Output Current: 2 A

Can handle high output currents, making it suitable for applications requiring higher current levels.

Maximum Non Repetitive Peak Forward Current: 60 A

Capable of handling high peak forward currents, providing reliability and protection against surges.

Technical Specifications

Bridge Rectifier Diodes 3N259 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

1000 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PSIP-T4

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Power Dissipation:

4.7 W

Reference Standard:

UL CERTIFIED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

1000 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

3N259 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

3010-01-013-6168, 3010010136168

NIIN

010136168

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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