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3N259

General Semiconductor

3N259 by General Semiconductor

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: WIRE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

Median Price

$0.674

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Rochester

USA . 244 parts In-Stock

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$0.674

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$0.559

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$0.498

244

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$0.674

$0.559

$0.498

Distributors (In-Stock)

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Digiode

USA . 2,689 parts In-Stock

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$0.524

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Elite Semiconductor

USA . 9,450 parts In-Stock

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Vyrian

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Resion

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Electronic Expediters

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J & M Industries LLC

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Fibra_Brandt Electronic GMBH

Germany . 30 parts In-Stock

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Corphita

USA . 3,176 parts In-Stock

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$0.497

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Corohmni

South Africa . 50 parts In-Stock

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$0.552

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QUARKTWIN TECHNOLOGY LTD

USA . 26,460 parts In-Stock

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Metaverse IC Inc.

Canada . 10,607 parts In-Stock

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Problanco Electronics

Mexico . 5,588 parts In-Stock

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SupplyDigital Components

Austria . 5,469 parts In-Stock

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Supply Digital

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Glotronic Ltd.

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Northwest PG Solutions

USA . 1,758 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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UHIMA Technologies

Türkiye . 795 parts In-Stock

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Native Components

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Assy Fe

Spain . 170 parts In-Stock

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Technical Specifications

Bridge Rectifier Diodes 3N259 attributes and parameters. Explore more Bridge Rectifier Diodes devices from General Semiconductor

Specs

Minimum Breakdown Voltage:

1000 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PSIP-W4

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

165 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Trade Compliance

3N259 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

3010-01-013-6168, 3010010136168

NIIN

010136168

Manufacturer Highlights

General Semiconductor

Vishay General Semiconductor traces its origins to the founding of the Semiconductor Components Division of General Instrument, in Hicksville, New York in 1960. In 1997, the power semiconductor business of General Instrument became an independent, publicly traded company, General Semiconductor. The same year, General Semiconductor acquired the small signal diode business of ITT Industries. Inc. With the acquisition of General Semiconductor in 2001, Vishay Intertechnology joined the top ranks of discrete semiconductor manufacturers and became a market and technology leader in power rectifiers and TVS avalanche breakdown diodes. Today, Vishay General Semiconductor serves a very wide range of customers with devices that can be used as rectifiers, signal limiters, voltage regulators, switches, signal modulators, signal mixers, signal demodulators, and oscillators. Vishay General Semiconductor customers include leading manufacturers of consumer electronics, lighting, telecommunications equipment, computers, and automotive products.

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