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3N259

International Semiconductor

3N259 by International Semiconductor

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: WIRE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

Median Price

$0.674

Lifecycle Status

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8

In-Stock Inventory

1k+

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Rochester

USA . 244 parts In-Stock

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$0.674

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$0.559

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$0.498

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$0.674

$0.559

$0.498

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Digiode

USA . 2,689 parts In-Stock

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$0.524

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Elite Semiconductor

USA . 9,450 parts In-Stock

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Vyrian

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Resion

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Electronic Expediters

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J & M Industries LLC

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Fibra_Brandt Electronic GMBH

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Corphita

USA . 3,176 parts In-Stock

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$0.497

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Corohmni

South Africa . 50 parts In-Stock

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$0.552

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QUARKTWIN TECHNOLOGY LTD

USA . 26,460 parts In-Stock

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Metaverse IC Inc.

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Problanco Electronics

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SupplyDigital Components

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Supply Digital

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Glotronic Ltd.

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Northwest PG Solutions

USA . 1,758 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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UHIMA Technologies

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Native Components

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Assy Fe

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Technical Specifications

Bridge Rectifier Diodes 3N259 attributes and parameters. Explore more Bridge Rectifier Diodes devices from International Semiconductor

Specs

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PSIP-W4

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

165 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

3N259 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

3010-01-013-6168, 3010010136168

NIIN

010136168

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