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GBJ2008-F

Diodes Incorporated

GBJ2008-F by Diodes Incorporated

GBJ2008-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 20A, and max repetitive peak reverse voltage of 800V. It is used in applications requiring high voltage rectification such as power supplies and motor drives due to its UL recognized standard and isolated case connection.

Median Price

$2.760

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 12 parts In-Stock

1+ parts

$2.760

100+ parts

$1.400

1k+ parts

$1.100

10k+ parts

-

12

$2.760

$1.400

$1.100

-

DigiKey

USA . 3 parts In-Stock

1+ parts

$2.760

100+ parts

$1.665

1k+ parts

$1.072

10k+ parts

$0.853

3

$2.760

$1.665

$1.072

$0.853

Verical

USA . 6,525 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.853

10k+ parts

-

6,525

-

-

$0.853

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 1,412 parts In-Stock

1+ parts

$1.950

100+ parts

-

1k+ parts

$0.820

10k+ parts

-

1,412

$1.950

-

$0.820

-

Microchip USA

USA . 6,508 parts In-Stock

1+ parts

$13.070

100+ parts

$12.980

1k+ parts

$12.940

10k+ parts

$12.900

6,508

$13.070

$12.980

$12.940

$12.900

QUARKTWIN TECHNOLOGY LTD

USA . 21,559 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,559

-

-

-

-

Lixinc

USA . 7,095 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,095

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Native Components

USA . 821 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

821

-

-

-

-

Northwest PG Solutions

USA . 486 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

486

-

-

-

-

Overview

Unlock the power of reliable and efficient electrical solutions with the GBJ2008-F by Diodes Incorporated. As a trusted manufacturer in the industry, Diodes Incorporated delivers top-quality bridge rectifier diodes that are essential for various applications. The GBJ2008-F offers customers value, benefits, and advantages such as high performance, durability, and ease of installation. Upgrade your electronic projects with this versatile and dependable product, ensuring smooth operation and peace of mind. Trust Diodes Incorporated for all your bridge rectifier diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent protection for the diodes and ensures durability.

No. of Terminals: 4

Simplifies the installation process and reduces the chance of errors.

Maximum Operating Temperature: 150 °C

Suitable for high-temperature applications, ensuring reliable performance.

Minimum Breakdown Voltage: 800 V

High breakdown voltage ensures the diodes can handle high voltages safely.

Maximum Output Current: 20 A

Capable of handling high current loads, making it versatile for various applications.

Diode Element Material: SILICON

Silicon diodes are known for their reliability and efficiency, making this product a reliable choice.

Technical Specifications

Bridge Rectifier Diodes GBJ2008-F attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

800 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

240 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBJ2008-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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