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DF01S1

Onsemi

DF01S1 by Onsemi

DF01S1 by Onsemi is a bridge rectifier diode with 4 elements, max output current of 1A, and max repetitive peak reverse voltage of 100V. It operates b/w -55 to 150°C and is ideal for applications requiring rectification in small outline packages.

Median Price

$0.224

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,000 parts In-Stock

1+ parts

$0.125

100+ parts

-

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3,000

$0.125

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Adafruit Industries

USA . 38 parts In-Stock

1+ parts

$0.273

100+ parts

$0.251

1k+ parts

$0.235

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-

38

$0.273

$0.251

$0.235

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Mouser Electronics

USA . 2,359 parts In-Stock

1+ parts

$0.640

100+ parts

$0.350

1k+ parts

-

10k+ parts

$0.165

2,359

$0.640

$0.350

-

$0.165

Rochester

USA . 9,202 parts In-Stock

1+ parts

-

100+ parts

$0.224

1k+ parts

$0.186

10k+ parts

$0.166

9,202

-

$0.224

$0.186

$0.166

Verical

USA . 5,312 parts In-Stock

1+ parts

-

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$0.207

5,312

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$0.207

DigiKey

USA . 2,112 parts In-Stock

1+ parts

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$0.280

2,112

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$0.280

Chip1Stop

Japan . 467 parts In-Stock

1+ parts

-

100+ parts

$0.188

1k+ parts

$0.177

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467

-

$0.188

$0.177

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,699 parts In-Stock

1+ parts

$0.175

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2,699

$0.175

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.217

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50

$0.217

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Vyrian

USA . 3,199 parts In-Stock

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3,199

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Goldney Electronics S.L.

Spain . 46 parts In-Stock

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46

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,061 parts In-Stock

1+ parts

$0.012

100+ parts

-

1k+ parts

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10k+ parts

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2,061

$0.012

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Semicontronic

India . 3,470 parts In-Stock

1+ parts

$0.133

100+ parts

$0.130

1k+ parts

$0.129

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-

3,470

$0.133

$0.130

$0.129

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Ampacity Inc.

Singapore . 3,152 parts In-Stock

1+ parts

$0.156

100+ parts

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3,152

$0.156

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Corphita

USA . 1,080 parts In-Stock

1+ parts

$0.166

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1,080

$0.166

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Corohmni

South Africa . 198 parts In-Stock

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$0.170

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198

$0.170

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Argo Parts USA

USA . 3,865 parts In-Stock

1+ parts

$0.214

100+ parts

-

1k+ parts

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$0.207

3,865

$0.214

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-

$0.207

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.217

100+ parts

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100

$0.217

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Advanced Electronics

New Zealand . 38 parts In-Stock

1+ parts

$0.273

100+ parts

$0.251

1k+ parts

$0.235

10k+ parts

-

38

$0.273

$0.251

$0.235

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Metaverse IC Inc.

Canada . 36,800 parts In-Stock

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36,800

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QUARKTWIN TECHNOLOGY LTD

USA . 12,996 parts In-Stock

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12,996

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Continental Prestige Electronics

USA . 10,502 parts In-Stock

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$0.221

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10,502

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$0.221

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Kulean Microsystems

USA . 7,096 parts In-Stock

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Problanco Electronics

Mexico . 6,121 parts In-Stock

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SupplyDigital Components

Austria . 5,959 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 1,500 parts In-Stock

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Supply Digital

USA . 1,245 parts In-Stock

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TANS Electronics

Latvia . 860 parts In-Stock

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860

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UHIMA Technologies

Türkiye . 33 parts In-Stock

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33

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Overview

Experience the next level of performance with the DF01S1 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in every product they produce. The DF01S1 belongs to the Bridge Rectifier Diodes category, making it perfect for a wide range of applications. Offering a maximum output current of 1A and a maximum repetitive peak reverse voltage of 100V, this diode is designed to provide unparalleled efficiency and durability. Say goodbye to frequent replacements and hello to long-lasting functionality with the DF01S1. Elevate your projects with this exceptional product today!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material ensures durability and reliability in various operating conditions.

Config:

BRIDGE, 4 ELEMENTS - Provides a complete bridge rectifier solution in a single component.

Surface Mount:

YES - Allows for easy installation on PCBs, saving space and reducing assembly time.

Package Shape:

RECTANGULAR - Provides a compact and efficient design for use in tight spaces.

No. of Terminals:

4 - Simplifies the connection process and reduces chances of error during installation.

Package Style (Meter):

SMALL OUTLINE - Suitable for applications where space is limited without compromising performance.

Maximum Operating Temperature:

150 °C - Ensures stable operation even in high-temperature environments.

Minimum Operating Temperature:

55 °C - Can function reliably in extreme cold conditions.

Terminal Finish:

Matte Tin (Sn) - annealed - Provides a secure connection and prevents corrosion over time.

Terminal Position:

DUAL - Offers more flexibility in routing and connecting the component in circuits.

Minimum Breakdown Voltage:

100 V - Provides a high safety margin for voltage fluctuations and surges.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures proper soldering without damaging the component during assembly.

Peak Reflow Temperature °C:

260 - Withstands high-temperature soldering processes without degradation.

Diode Type:

BRIDGE RECTIFIER DIODE - Specifically designed for rectifying AC to DC in bridge configurations.

Maximum Output Current:

1 A - Capable of handling moderate current loads in various applications.

Terminal Form:

GULL WING - Facilitates easy mounting and soldering on PCBs for efficient assembly.

No. of Elements:

4 - Provides redundancy and reliability in rectifying AC power.

Maximum Repetitive Peak Reverse Voltage:

100 V - Offers protection against reverse voltage spikes in circuits.

Maximum Non Repetitive Peak Forward Current:

35 A - Can withstand short-duration high currents without damage.

Diode Element Material:

SILICON - Ensures efficient rectification and high performance in the component.

Technical Specifications

Bridge Rectifier Diodes DF01S1 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

100 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DF01S1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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