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GBJ2010-F

Diodes Incorporated

GBJ2010-F by Diodes Incorporated

GBJ2010-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 20A, and max repetitive peak reverse voltage of 1000V. It is used in applications requiring high voltage rectification such as power supplies and motor drives due to its UL recognized standard and isolated case connection. Operating temperature ranges from -55°C to 150°C making it suitable for various industrial environments.

Median Price

$1.950

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 22 parts In-Stock

1+ parts

$2.920

100+ parts

-

1k+ parts

$1.110

10k+ parts

-

22

$2.920

-

$1.110

-

DigiKey

USA . 15 parts In-Stock

1+ parts

$2.920

100+ parts

$1.763

1k+ parts

$1.055

10k+ parts

$0.919

15

$2.920

$1.763

$1.055

$0.919

Verical

USA . 21,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.980

10k+ parts

-

21,690

-

-

$0.980

-

Arrow

USA . 1,783 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.802

10k+ parts

$0.744

1,783

-

-

$0.802

$0.744

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,133 parts In-Stock

1+ parts

-

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5,133

-

-

-

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NAC Semi

USA . 150 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.220

10k+ parts

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150

-

-

$1.220

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Bristol Electronics

USA . 1 parts In-Stock

1+ parts

-

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-

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1

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 50 parts In-Stock

1+ parts

$2.956

100+ parts

-

1k+ parts

$2.838

10k+ parts

$2.838

50

$2.956

-

$2.838

$2.838

Microchip USA

USA . 3,274 parts In-Stock

1+ parts

$14.110

100+ parts

$14.020

1k+ parts

$13.970

10k+ parts

$13.930

3,274

$14.110

$14.020

$13.970

$13.930

Metaverse IC Inc.

Canada . 99,000 parts In-Stock

1+ parts

-

100+ parts

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99,000

-

-

-

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Lixinc

USA . 13,287 parts In-Stock

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13,287

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-

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 4,918 parts In-Stock

1+ parts

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4,918

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Glotronic Ltd.

UK . 3,790 parts In-Stock

1+ parts

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100+ parts

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3,790

-

-

-

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Northwest PG Solutions

USA . 1,472 parts In-Stock

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1,472

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Perfect Parts

USA . 626 parts In-Stock

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626

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Native Components

USA . 241 parts In-Stock

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241

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Overview

Enhance your electronic designs with the GBJ2010-F bridge rectifier diode from Diodes Incorporated. With a reputation for high-quality components, Diodes Incorporated delivers a reliable product that is suitable for a variety of applications. Whether you're working on power supplies, motor drives, or battery chargers, this bridge rectifier diode offers exceptional value with its efficient performance and durable construction. Trust in Diodes Incorporated to provide you with the tools you need to bring your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material ensures durability and protection for the diodes, making them suitable for a variety of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, these bridge rectifier diodes can handle tough and demanding environments without compromising performance.

Minimum Breakdown Voltage: 1000 V

The high breakdown voltage provides reliable insulation and protection, ensuring the safety and longevity of the diodes.

Maximum Output Current: 20 A

A high maximum output current allows these diodes to handle heavy loads and provide efficient power conversion.

Maximum Repetitive Peak Reverse Voltage: 1000 V

The high repetitive peak reverse voltage rating ensures that these diodes can withstand reverse polarity and voltage spikes without damage.

Technical Specifications

Bridge Rectifier Diodes GBJ2010-F attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

1000 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

240 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBJ2010-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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