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GBJ608-F

Diodes Incorporated

GBJ608-F by Diodes Incorporated

GBJ608-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 6A, and max repetitive peak reverse voltage of 800V. It is used in applications requiring rectification of AC to DC power sources, such as power supplies and motor drives. With a package style of flange mount and operating temperature range from -65°C to 150°C, it offers reliable performance in various electronic systems.

Median Price

$0.630

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$0.219

100+ parts

$0.199

1k+ parts

$0.180

10k+ parts

-

2,000

$0.219

$0.199

$0.180

-

Mouser Electronics

USA . 3 parts In-Stock

1+ parts

$3.040

100+ parts

-

1k+ parts

$1.250

10k+ parts

$1.130

3

$3.040

-

$1.250

$1.130

Verical

USA . 510 parts In-Stock

1+ parts

-

100+ parts

$0.630

1k+ parts

-

10k+ parts

-

510

-

$0.630

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semtec, LLC

USA . 15 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.219

100+ parts

$0.199

1k+ parts

$0.180

10k+ parts

-

2,000

$0.219

$0.199

$0.180

-

Component Stockers USA

USA . 7 parts In-Stock

1+ parts

$2.110

100+ parts

-

1k+ parts

-

10k+ parts

-

7

$2.110

-

-

-

Northwest PG Solutions

USA . 1,463 parts In-Stock

1+ parts

$3.536

100+ parts

-

1k+ parts

-

10k+ parts

-

1,463

$3.536

-

-

-

Microchip USA

USA . 2,680 parts In-Stock

1+ parts

$8.680

100+ parts

-

1k+ parts

-

10k+ parts

-

2,680

$8.680

-

-

-

Metaverse IC Inc.

Canada . 70,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

70,000

-

-

-

-

Native Components

USA . 553 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.118

10k+ parts

-

553

-

-

$3.118

-

Overview

Experience superior performance and reliability with the GBJ608-F bridge rectifier diode from Diodes Incorporated. As a trusted manufacturer in the industry, Diodes Incorporated ensures top-quality products that exceed expectations. The GBJ608-F is perfect for applications requiring efficient conversion of AC to DC power, offering a hassle-free solution for various electronic projects. With its durable construction and impressive specifications, this diode provides excellent value and benefits, making it the ideal choice for customers looking for a reliable and cost-effective solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various operating conditions.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance in demanding environments.

Maximum Output Current: 6 A

Capable of handling a relatively high current, making it suitable for a wide range of applications.

Maximum Repetitive Peak Reverse Voltage: 800 V

Can handle high voltages, making it suitable for use in power supply circuits.

Diode Element Material: SILICON

Silicon diodes offer good performance and reliability, making them a popular choice for electronic applications.

Technical Specifications

Bridge Rectifier Diodes GBJ608-F attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

170 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBJ608-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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