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GBJ606L

Diodes Incorporated

GBJ606L by Diodes Incorporated

GBJ606L by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 2.8A, and max repetitive peak reverse voltage of 600V. It is used in applications requiring rectification of AC to DC power sources, such as power supplies and motor drives. Operating temp range: -55°C to 150°C.

Median Price

$0.957

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 330 parts In-Stock

1+ parts

$0.435

100+ parts

-

1k+ parts

$0.435

10k+ parts

$0.435

330

$0.435

-

$0.435

$0.435

Farnell

UK . 125 parts In-Stock

1+ parts

$1.479

100+ parts

$0.843

1k+ parts

$0.421

10k+ parts

$0.369

125

$1.479

$0.843

$0.421

$0.369

Element14

Singapore . 125 parts In-Stock

1+ parts

$102.100

100+ parts

$58.190

1k+ parts

$29.040

10k+ parts

$27.910

125

$102.100

$58.190

$29.040

$27.910

Verical

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.339

10k+ parts

-

400

-

-

$0.339

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 126 parts In-Stock

1+ parts

$1.160

100+ parts

$0.661

1k+ parts

$0.330

10k+ parts

-

126

$1.160

$0.661

$0.330

-

Metaverse IC Inc.

Canada . 75,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

75,000

-

-

-

-

Northwest PG Solutions

USA . 1,644 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.827

10k+ parts

-

1,644

-

-

$3.827

-

Native Components

USA . 554 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.788

10k+ parts

-

554

-

-

$3.788

-

Overview

Experience the superior quality and reliability of the GBJ606L bridge rectifier diode from Diodes Incorporated. With a package body material made of durable plastic/epoxy, this component is designed for optimal performance in a variety of applications. Whether you're working on power supplies, industrial automation, or consumer electronics, the GBJ606L offers unmatched value and efficiency. Trust Diodes Incorporated for all your semiconductor needs and discover the advantages of top-notch engineering and innovation in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for a wide range of applications.

Configuration: BRIDGE, 4 ELEMENTS

Bridge configuration with four elements ensures efficient rectification of AC to DC current.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Minimum Breakdown Voltage: 600 V

High breakdown voltage ensures reliable and safe operation.

Maximum Output Current: 2.8 A

Can handle moderate current loads efficiently.

Technical Specifications

Bridge Rectifier Diodes GBJ606L attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

600 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSFM-T4

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2.8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

255

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

GBJ606L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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