Loading...

GBU4M-M3/51

Vishay Intertechnology

GBU4M-M3/51 by Vishay Intertechnology

Vishay Intertechnology's GBU4M-M3/51 is a bridge rectifier diode with 4 elements, capable of handling up to 3A output current and 1000V breakdown voltage. Ideal for applications requiring high efficiency power conversion in temperatures ranging from -55°C to 150°C.

Median Price

$1.092

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$1.092

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$1.092

-

-

-

Vyrian

USA . 5,825 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,825

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 100 parts In-Stock

1+ parts

$1.070

100+ parts

-

1k+ parts

$1.027

10k+ parts

-

100

$1.070

-

$1.027

-

Ampacity Inc.

Singapore . 1,363 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

-

10k+ parts

-

1,363

$2.010

-

-

-

AZTECH Wire

Italy . 452 parts In-Stock

1+ parts

$12.460

100+ parts

-

1k+ parts

-

10k+ parts

-

452

$12.460

-

-

-

Overview

Upgrade your electronic applications with the GBU4M-M3/51 by Vishay Intertechnology. As a leading manufacturer in the industry, Vishay Intertechnology ensures top-quality components for reliable performance. The GBU4M-M3/51 bridge rectifier diode offers unparalleled value with its efficient design and high durability. Whether you're working on power supplies, industrial controls, or lighting systems, this product provides the perfect solution for your needs. Trust Vishay Intertechnology to deliver the best-in-class components for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Configuration: BRIDGE, 4 ELEMENTS

Efficiently rectifies AC input to DC output with 4 diode elements in a bridge configuration.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a variety of environments.

Minimum Breakdown Voltage: 1000 V

Provides a high level of protection against voltage spikes and surges.

Maximum Output Current: 3 A

Capable of handling a decent amount of current, suitable for many applications.

Diode Element Material: SILICON

Silicon diodes are known for their reliability and consistent performance.

Technical Specifications

Bridge Rectifier Diodes GBU4M-M3/51 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Vishay Intertechnology

Specs

Minimum Breakdown Voltage:

1000 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T4

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

GBU4M-M3/51 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20