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KBU406GT0G

Taiwan Semiconductor

KBU406GT0G by Taiwan Semiconductor

KBU406GT0G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, capable of handling up to 4A output current and 800V breakdown voltage. It features a plastic/epoxy package body material, matte tin terminal finish, and operates b/w -55°C to 150°C. Ideal for applications requiring reliable rectification in electronic circuits.

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Nova Conductors

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AZTECH Wire

Italy . 870 parts In-Stock

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870

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QUARKTWIN TECHNOLOGY LTD

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Continental Prestige Electronics

USA . 2,726 parts In-Stock

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Argo Parts USA

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Overview

Unleash the power of reliable and high-quality electronics with the KBU406GT0G Bridge Rectifier Diode by Taiwan Semiconductor. With a robust construction and UL recognized standards, this product is designed to deliver exceptional performance in a wide range of applications. From industrial machinery to consumer electronics, this diode offers maximum output current of 4A and a minimum breakdown voltage of 800V, ensuring smooth and efficient operation. Trust in Taiwan Semiconductor's expertise and choose the KBU406GT0G for superior quality and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan and reliability.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a variety of environments and applications.

Minimum Breakdown Voltage: 800 V

High breakdown voltage ensures the diode can handle higher voltages without breaking down, increasing safety and reliability.

Maximum Output Current: 4 A

Capable of handling relatively high currents, making it suitable for a wide range of power applications.

Maximum Repetitive Peak Reverse Voltage: 800 V

High reverse voltage capability protects the diode from damage in case of voltage spikes or reversals.

Technical Specifications

Bridge Rectifier Diodes KBU406GT0G attributes and parameters. Explore more Bridge Rectifier Diodes devices from Taiwan Semiconductor

Specs

Minimum Breakdown Voltage:

800 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PSFM-W4

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

800 V

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

KBU406GT0G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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