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GBU601D2G

Taiwan Semiconductor

GBU601D2G by Taiwan Semiconductor

GBU601D2G by Taiwan Semiconductor is a Bridge Rectifier Diode with 4 elements, capable of handling up to 6A output current. It operates b/w -55°C to 150°C and has a max breakdown voltage of 50V. Ideal for applications requiring rectification in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,020 parts In-Stock

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4,020

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Aztec Data Supply Inc.

USA . 90 parts In-Stock

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$0.114

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90

$0.114

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Semicontronic

India . 716 parts In-Stock

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$2.010

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$1.960

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$1.950

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716

$2.010

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$1.950

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AZTECH Wire

Italy . 309 parts In-Stock

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$17.545

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309

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Continental Prestige Electronics

USA . 4,088 parts In-Stock

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Argo Parts USA

USA . 3,325 parts In-Stock

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Bastille Electronics

Australia . 33 parts In-Stock

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Overview

Experience superior quality and reliability with the GBU601D2G Bridge Rectifier Diode by Taiwan Semiconductor. Known for their exceptional craftsmanship, Taiwan Semiconductor offers a wide range of applications for this product category, ensuring optimal performance in any project. With its durable construction and high operating temperature range, the GBU601D2G provides unmatched value and efficiency for customers seeking a reliable solution for their electrical needs. Upgrade to Taiwan Semiconductor today and experience the benefits firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Ensures durability and protection for the diodes, making the product reliable for long-term use.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

Operates effectively even in low temperature environments, providing versatility in usage.

Maximum Output Current: 6 A

Capable of handling high current loads, making it suitable for various applications requiring high power.

Maximum Repetitive Peak Reverse Voltage: 50 V

Suitable for applications where reverse voltage protection is necessary.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and reliability, ensuring stable performance.

Technical Specifications

Bridge Rectifier Diodes GBU601D2G attributes and parameters. Explore more Bridge Rectifier Diodes devices from Taiwan Semiconductor

Specs

Minimum Breakdown Voltage:

50 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

175 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

50 V

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

GBU601D2G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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