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GBU4M-M3/45

Vishay Intertechnology

GBU4M-M3/45 by Vishay Intertechnology

Vishay Intertechnology's GBU4M-M3/45 is a bridge rectifier diode with 4 elements, capable of handling up to 3A output current and 1000V breakdown voltage. It operates b/w -55°C to 150°C, making it suitable for applications requiring high voltage rectification in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,680

-

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 658 parts In-Stock

1+ parts

$12.158

100+ parts

-

1k+ parts

-

10k+ parts

-

658

$12.158

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-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

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Overview

Enhance your electronic designs with the GBU4M-M3/45 bridge rectifier diode from Vishay Intertechnology. Known for their top-quality components, Vishay Intertechnology offers reliable and efficient solutions for a wide range of applications. Whether you're working on power supplies, motor controls, or battery chargers, this bridge rectifier diode provides exceptional performance and durability. Trust Vishay Intertechnology to deliver the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the diode lightweight and durable, ideal for a variety of applications.

No. of Terminals: 4

Having 4 terminals allows for easy connectivity and installation in circuitry.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand heat and perform reliably in challenging conditions.

Minimum Breakdown Voltage: 1000 V

The high minimum breakdown voltage ensures the diode can handle high voltage applications without failure.

Diode Type: BRIDGE RECTIFIER DIODE

As a bridge rectifier diode, this product is designed to efficiently convert AC voltage to DC voltage, making it suitable for power supply circuits.

Maximum Output Current: 3 A

With a maximum output current of 3 A, this diode is capable of handling moderate power loads effectively.

Maximum Non Repetitive Peak Forward Current: 150 A

The high maximum non-repetitive peak forward current rating indicates the diode's ability to handle short-duration power surges without damage.

Technical Specifications

Bridge Rectifier Diodes GBU4M-M3/45 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Vishay Intertechnology

Specs

Minimum Breakdown Voltage:

1000 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T4

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

GBU4M-M3/45 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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