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GBJ610-F

Diodes Incorporated

GBJ610-F by Diodes Incorporated

GBJ610-F by Diodes Inc. is a bridge rectifier diode with 4 elements, capable of handling up to 6A output current and 1000V peak repetitive reverse voltage. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high voltage rectification in electronic circuits.

Median Price

$1.993

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 15 parts In-Stock

1+ parts

$1.602

100+ parts

$1.125

1k+ parts

$1.102

10k+ parts

$1.088

15

$1.602

$1.125

$1.102

$1.088

Farnell

UK . 15 parts In-Stock

1+ parts

$1.776

100+ parts

$1.093

1k+ parts

$1.072

10k+ parts

$1.050

15

$1.776

$1.093

$1.072

$1.050

Mouser Electronics

USA . 294 parts In-Stock

1+ parts

$2.210

100+ parts

-

1k+ parts

$1.170

10k+ parts

$1.100

294

$2.210

-

$1.170

$1.100

DigiKey

USA . 2 parts In-Stock

1+ parts

$2.210

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-

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2

$2.210

-

-

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Newark

USA . 5 parts In-Stock

1+ parts

$2.440

100+ parts

-

1k+ parts

$1.810

10k+ parts

$1.510

5

$2.440

-

$1.810

$1.510

Verical

USA . 660 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.672

10k+ parts

-

660

-

-

$0.672

-

Distributors (In-Stock)

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LIBRA Elektronik GmbH

Germany . 390 parts In-Stock

1+ parts

-

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390

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LWI Electronics Inc

India . 30 parts In-Stock

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30

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Distributors (Availability)

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Continental Prestige Electronics

USA . 12 parts In-Stock

1+ parts

$1.220

100+ parts

$0.890

1k+ parts

$0.612

10k+ parts

-

12

$1.220

$0.890

$0.612

-

Andel Nordic

Denmark . 1,200 parts In-Stock

1+ parts

$5.355

100+ parts

-

1k+ parts

$5.141

10k+ parts

$5.141

1,200

$5.355

-

$5.141

$5.141

Microchip USA

USA . 5,096 parts In-Stock

1+ parts

$9.685

100+ parts

-

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5,096

$9.685

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Native Components

USA . 191 parts In-Stock

1+ parts

$12.421

100+ parts

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191

$12.421

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Northwest PG Solutions

USA . 830 parts In-Stock

1+ parts

$13.663

100+ parts

$12.297

1k+ parts

-

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830

$13.663

$12.297

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Kepictronics

USA . 9,000 parts In-Stock

1+ parts

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9,000

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iodParts Technologies Inc.

India . 1,405 parts In-Stock

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1,405

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Perfect Parts

USA . 828 parts In-Stock

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828

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Eastek

USA . 15 parts In-Stock

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15

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Overview

Enhance your electronic projects with the GBJ610-F Bridge Rectifier Diode by Diodes Incorporated. Manufactured with top-quality materials and designed for optimal performance, this rectangular package with four elements offers a reliable solution for various applications. With a maximum output current of 6A and a maximum repetitive peak reverse voltage of 1000V, this diode ensures efficiency and durability. Trust in Diodes Incorporated's reputation for excellence and choose the GBJ610-F for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the diodes, ensuring durability and safety.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various industrial applications.

Minimum Operating Temperature: -65 °C

Wide operating temperature range allows for use in diverse environments.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop results in high efficiency and less power loss.

Maximum Output Current: 6 A

Capable of handling relatively high current, making it suitable for medium power applications.

Maximum Repetitive Peak Reverse Voltage: 1000 V

Can handle high reverse voltages, providing protection against voltage spikes.

Technical Specifications

Bridge Rectifier Diodes GBJ610-F attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

170 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBJ610-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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