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GBJ1002-F

Diodes Incorporated

GBJ1002-F by Diodes Incorporated

GBJ1002-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 10A, and max repetitive peak reverse voltage of 200V. Ideal for applications requiring high efficiency AC to DC conversion in electronic circuits. Operates b/w -65°C to 150°C temperature range.

Median Price

$1.928

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 6 parts In-Stock

1+ parts

$1.845

100+ parts

$1.033

1k+ parts

$0.915

10k+ parts

$0.893

6

$1.845

$1.033

$0.915

$0.893

Farnell

UK . 6 parts In-Stock

1+ parts

$2.012

100+ parts

$0.991

1k+ parts

$0.874

10k+ parts

$0.857

6

$2.012

$0.991

$0.874

$0.857

Newark

USA . 5 parts In-Stock

1+ parts

$2.280

100+ parts

-

1k+ parts

$1.070

10k+ parts

$0.749

5

$2.280

-

$1.070

$0.749

Verical

USA . 2,355 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.735

10k+ parts

-

2,355

-

-

$0.735

-

Avnet

USA . 15 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 18 parts In-Stock

1+ parts

$1.330

100+ parts

$1.040

1k+ parts

$0.714

10k+ parts

-

18

$1.330

$1.040

$0.714

-

Microchip USA

USA . 5,205 parts In-Stock

1+ parts

$11.250

100+ parts

$11.180

1k+ parts

$11.140

10k+ parts

$11.110

5,205

$11.250

$11.180

$11.140

$11.110

Native Components

USA . 551 parts In-Stock

1+ parts

$74.760

100+ parts

-

1k+ parts

-

10k+ parts

$71.770

551

$74.760

-

-

$71.770

Northwest PG Solutions

USA . 2,118 parts In-Stock

1+ parts

$82.236

100+ parts

-

1k+ parts

-

10k+ parts

-

2,118

$82.236

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 22,688 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22,688

-

-

-

-

Perfect Parts

USA . 818 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

818

-

-

-

-

Eastek

USA . 15 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15

-

-

-

-

Overview

Upgrade your electronic devices with the GBJ1002-F Bridge Rectifier Diode by Diodes Incorporated. Known for their top-quality manufacturing, Diodes Incorporated delivers reliable components that exceed industry standards. This versatile diode is perfect for a wide range of applications, offering smooth and efficient rectification of AC to DC power. With its robust design and high-performance capabilities, the GBJ1002-F ensures long-lasting durability and stable operation. Trust Diodes Incorporated to provide you with the best-in-class solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for a variety of applications.

Maximum Output Current: 10 A

Capable of handling high current loads, making it reliable for heavy-duty applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

Can handle high reverse voltages, providing protection to the circuit and components.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and low leakage current, making this bridge rectifier a reliable choice.

Technical Specifications

Bridge Rectifier Diodes GBJ1002-F attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

170 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBJ1002-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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