Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V; No. of Elements: 2;
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Insulated Gate Bipolar Transistors (IGBT) MG75J2YS9 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Toshiba
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MG75J2YS9 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
BAV99
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32F405RGT6
STMicroelectronics
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
2N7002
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
2N2222A
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
STM32H743XIH6
STM32H743XIH6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 36-Ch 16-Bit ADC, and 2-Ch 12-Bit DAC. It operates at up to 48 MHz, has 1085440 bytes of RAM, and offers connectivity options like CAN, I2C, USB. Ideal for industrial applications requiring high-performance processing and extensive peripheral support.
NE555D
Texas Instruments
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
LM358N
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LL4148
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
1N4148WS
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
National Semiconductor
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
BSS138
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
Philips Semiconductors
SS495ASP
Micro Switch
The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.
SMBJ18CA
Bourns
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317AEMP/NOPB
LM317AEMP/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and a max output current of 1.5A. It operates in temperatures ranging from -40°C to 125°C, making it suitable for various applications requiring precise voltage regulation in a compact package.
Loras Industries
NXP Semiconductors
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
IXGH24N170
Littelfuse
IXGH24N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 50A max collector current, and 250W max power dissipation. Ideal for power control applications, it has a single configuration and operates at up to 150°C.
RGTV60TS65DGC11
ROHM
ROHM's RGTV60TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and fast turn-off time of 201ns. Suitable for use in various electronic devices requiring efficient power management.
7MBR50VB120-50
Fuji Electric
Fuji Electric's 7MBR50VB120-50 IGBT features N-CHANNEL polarity, 1200V VCEsat, and 50A IC. Ideal for power control applications with a max operating temperature of 175°C.
FGH40N65UFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;
FGL60N100BNTDTU
Onsemi
FGL60N100BNTDTU by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1000V and a Max Collector Current of 60A. It has a Nominal Turn Off Time of 760ns and Nominal Turn On Time of 460ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and THROUGH-HOLE terminals.
FS200R12KT4RBOSA1
Infineon Technologies
Infineon's FS200R12KT4RBOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and operating temperature up to 175°C.
FP15R12KE3GBOSA1
Infineon Technologies' FP15R12KE3GBOSA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 25A. It has a toff of 610ns and ton of 135ns, suitable for high-power applications like motor drives and inverters due to its complex configuration and isolated case connection.
IRG4PH20KPBF
IRG4PH20KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 1200V and Max Power Dissipation of 24W. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 720ns and Max Fall Time of 400ns. Ideal for high-power systems requiring efficient switching capabilities.
IXBK55N300
IXBK55N300 by Littelfuse is an N-CHANNEL IGBT with 3.2V VCEsat, 130A IC, and 625W power dissipation. Ideal for POWER CONTROL applications, it features a 3000V VCE max and -55 to 150°C operating temp range in a RECTANGULAR package with THROUGH-HOLE terminals.
APT30GP60BDQ1G
Microchip Technology
Microchip Technology's APT30GP60BDQ1G is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 100A. It is designed for power control applications, offering a nominal turn-off time of 165ns and a nominal turn-on time of 31ns.
IRGR4045DPBF
IRGR4045DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 77W. It has a single configuration with built-in diode, ideal for power control applications requiring fast switching times (tr: 15ns, tf: 22ns). This surface-mount transistor operates at temperatures up to 175°C.
IKW25N120H3
IKW25N120H3 by Infineon Technologies is a N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and max collector current of 50A. It is used for power control applications, offering a nominal turn-off time of 397ns and max power dissipation of 326W.
FF450R12ME4BOSA1
FF450R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 675A. This rectangular package IGBT is suitable for applications requiring high power switching capabilities at temperatures up to 150°C.
MIXA30W1200TED
The Littelfuse MIXA30W1200TED is an N-CHANNEL IGBT bridge with 6 elements, built-in diode, and thermistor. Ideal for power control applications, it has a max VCEsat of 2.1V and can handle up to 43A collector current. With a package style of flange mount and operating temperature up to 150°C, it offers reliable performance in various industrial settings.
FGP10N60UNDF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 139 W; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-PSFM-T3;
FB30R06W1E3BOMA1
Infineon Technologies' FB30R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector-emitter voltage of 600V, and max. collector current of 39A. It has a nominal turn-off time of 245ns and turn-on time of 42ns, suitable for applications requiring high power switching like motor drives and inverters at up to 175°C operating temperature.
APT150GN120JDQ4
Microchip Technology's APT150GN120JDQ4 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 215A, and Ptot of 625W. Ideal for power control applications due to its fast turn-off time (toff) of 955ns and high collector-emitter voltage rating of 1200V. Package style is flange mount with isolated case connection.
IRG4PH50UDPBF
IRG4PH50UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a collector current of 45A. It has a nominal turn-off time of 570ns and turn-on time of 73ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals and built-in diode, suitable for flange mount installations.
FS50R07W1E3B11ABOMA1
Infineon's FS50R07W1E3B11ABOMA1 is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 250ns toff. Ideal for power control applications, this complex transistor has 6 elements in a rectangular package with flange mount style.
IXBX75N170A
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1040 W; Maximum Collector Current (IC): 110 A; No. of Elements: 1;
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MG75Q1BS11
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MG75Q2YS40
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 560 W; Maximum Collector Current (IC): 75 A; Case Connection: ISOLATED;
MG75N2YS40
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON; No. of Elements: 2; Qualification: Not Qualified;
MG75J2YS40
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Fall Time (tf): 350 ns;
MG75J2YS45
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; JESD-30 Code: R-PUFM-X7; Package Body Material: PLASTIC/EPOXY;
MG75N1BS1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Terminal Form: UNSPECIFIED; JESD-30 Code: R-PUFM-X3;
MG75N2YS1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 75 A; No. of Terminals: 7;
MG75J2YS50
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 75 A; Transistor Application: MOTOR CONTROL;
MG75H2YS1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 800 ns;
MG75J1ZS40
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 600 V; Terminal Position: UPPER;
MG75N1AS1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON; No. of Terminals: 3;
MG75J2YS91
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 75 A; No. of Elements: 2; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 600 V;
MG75J1SB11
N-CHANNEL; Configuration: SINGLE; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 600 V; Transistor Element Material: SILICON;
MG75J1ZS50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN CONFIGURABLE DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 75 A; Maximum Turn On Time (ton): 160 ns;
MG75J6ES1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 600 V; Terminal Position: UPPER;
MG75J6ES40
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Transistor Element Material: SILICON;
MG75H1BS1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Additional Features: HIGH SPEED SWITCHING; Package Style (Meter): FLANGE MOUNT;
MG75J1BS11
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MG75J2YS1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; No. of Elements: 2;
MG75HF12TLC1
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 530 W; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER;
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