Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON; No. of Terminals: 3;
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Insulated Gate Bipolar Transistors (IGBT) MG75N1AS1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Toshiba
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MG75N1AS1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
PIC18F4550-I/PT
Microchip Technology
PIC18F4550-I/PT by Microchip: 8-bit microcontroller with 44 terminals, 48 MHz clock frequency, and USB connectivity. Ideal for industrial applications requiring low power mode and 10-bit ADC channels.
M85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
SMBJ18CA
Alpha & Omega Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Semtech
1N4148
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
Hy Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
FDLL4148
National Semiconductor
MURS160T3G
Onsemi
MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.
Littelfuse
BAV99
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
KSZ9031RNXIC
KSZ9031RNXIC by Microchip Technology is a network interface chip with 1 transceiver. It operates at a data rate of 1000 Mbps and has a nominal voltage of 1.2V. This chip is commonly used in industrial applications requiring Ethernet connectivity.
1N4148WS
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Leshan Radio
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
MBRS3200T3G
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
LM358MX
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Vishay Intertechnology
Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.
2N7002
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
FS75R07W2E3B11ABOMA1
Infineon Technologies
Infineon Technologies' FS75R07W2E3B11ABOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 95A, and max. collector-emitter voltage of 650V. Ideal for power control applications due to its complex configuration and fast turn on/off times (44ns/258ns). Package style: Flange mount with isolated case connection.
IRG4PC30UDPBF
IRG4PC30UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 23A. It is designed for POWER CONTROL applications, featuring a single configuration with built-in diode and a package style of FLANGE MOUNT. Operating temperature ranges from -55 to 150 °C.
IXXX160N65C4
IXYS Corporation
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 290 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 175 Cel;
HGTG30N60A4D
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Maximum Gate-Emitter Threshold Voltage: 7 V;
AFGY100T65SPD
AFGY100T65SPD by Onsemi is an N-CHANNEL IGBT with 650V VCEsat and 120A IC, ideal for POWER CONTROL applications. It features a max power dissipation of 882W, operating temperature range of -55 to 175°C, and built-in diode configuration.
APT100GN60B2G
Microchip Technology's APT100GN60B2G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it has a built-in diode, 435ns turn-off time, and 96ns turn-on time. Package style: IN-LINE, package shape: RECTANGULAR, terminal form: THROUGH-HOLE.
FF600R12IP4BOSA1
FF600R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It is designed for POWER CONTROL applications with a max voltage of 1200V and operating temperature of 175°C. Featuring a turn-off time of 1050ns and turn-on time of 370ns, this rectangular package transistor is ideal for high-power systems.
APTGLQ100DA120T1G
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 170 A; Maximum Gate-Emitter Voltage: 20 V;
FS150R12KT4PBPSA1
Infineon FS150R12KT4PBPSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn off time of 605ns. Ideal for applications requiring high power efficiency in industrial systems operating up to 150°C.
FGH40N60SFDTU_F085
FGH40N60SFDTU_F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 54ns fall time, and -55 to 150°C operating temperature range.
IXGH60N60C3D1
IXGH60N60C3D1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector current (IC) of 75A. It is commonly used in power control applications due to its high power dissipation of 380W and max operating temperature of 150°C.
FGA25N120ANTDTU
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 25 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Voltage: 20 V;
IRG7PH42UD2-EP
IRG7PH42UD2-EP by Infineon Technologies is an N-channel IGBT with a max collector-emitter voltage of 1200V and a collector current of 60A. It has a nominal turn-off time of 470ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and a built-in diode for efficient performance.
HGTG30N60C3D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Transistor Element Material: SILICON;
FP35R12KT4B15BOSA1
FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).
IXGA20N120A3-TRL
IXGA20N120A3-TRL by IXYS Corp is a N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and Pmax of 180W. Ideal for POWER CONTROL applications due to its fast ton of 66ns and high VCE rating of 1200V. This surface mount device operates b/w -55 to +150 °C for efficient power management.
RGTV60TS65DGC11
ROHM
ROHM's RGTV60TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and fast turn-off time of 201ns. Suitable for use in various electronic devices requiring efficient power management.
CM500HA-34A
Powerex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Case Connection: ISOLATED; Terminal Position: UPPER;
FS50R12KE3BOSA1
FS50R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 610 ns and ton of 140 ns, suitable for high-power applications. With a Vce of 1200V and IC of 75A, it operates at up to 150°C making it ideal for industrial power systems.
IGD06N60TATMA1
Infineon's IGD06N60TATMA1 is an N-CHANNEL IGBT with 600V VCE, 6A IC, and 17ns ton. It is a surface-mount device in a plastic package suitable for high-speed switching applications.
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MG75Q1BS11
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MG75Q2YS40
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 560 W; Maximum Collector Current (IC): 75 A; Case Connection: ISOLATED;
MG75N2YS40
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON; No. of Elements: 2; Qualification: Not Qualified;
MG75J2YS40
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Fall Time (tf): 350 ns;
MG75J2YS45
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; JESD-30 Code: R-PUFM-X7; Package Body Material: PLASTIC/EPOXY;
MG75N1BS1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Terminal Form: UNSPECIFIED; JESD-30 Code: R-PUFM-X3;
MG75N2YS1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 75 A; No. of Terminals: 7;
MG75J2YS50
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 75 A; Transistor Application: MOTOR CONTROL;
MG75H2YS1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 800 ns;
MG75J1ZS40
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 600 V; Terminal Position: UPPER;
MG75J2YS9
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V; No. of Elements: 2;
MG75J2YS91
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 75 A; No. of Elements: 2; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 600 V;
MG75J1SB11
N-CHANNEL; Configuration: SINGLE; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 600 V; Transistor Element Material: SILICON;
MG75J1ZS50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN CONFIGURABLE DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 75 A; Maximum Turn On Time (ton): 160 ns;
MG75J6ES1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 600 V; Terminal Position: UPPER;
MG75J6ES40
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Transistor Element Material: SILICON;
MG75H1BS1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Additional Features: HIGH SPEED SWITCHING; Package Style (Meter): FLANGE MOUNT;
MG75J1BS11
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MG75J2YS1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; No. of Elements: 2;
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