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XMS430FR2311IRGYR

Texas Instruments

XMS430FR2311IRGYR by Texas Instruments

XMS430FR2311IRGYR by Texas Instruments is a 16-bit microcontroller with 3840 ROM words, 1024 RAM bytes, and 8-Ch 10-Bit ADC channels. Ideal for industrial applications, it offers peripherals like PWM, RTC, TIMER(2), and connectivity options such as I2C, IRDA, SPI, UART at a max clock frequency of 16 MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,321 parts In-Stock

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Digiode

USA . 2,363 parts In-Stock

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2,363

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Distributors (Availability)

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One Stop Electronics

USA . 1,309 parts In-Stock

1+ parts

$9.000

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1,309

$9.000

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Parana Technologies

USA . 1,654 parts In-Stock

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$17.175

100+ parts

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$17.391

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1,654

$17.175

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$17.391

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AZTECH Wire

Italy . 720 parts In-Stock

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$17.598

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720

$17.598

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DigiPath Technology Company

USA . 1,988 parts In-Stock

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$18.912

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1,988

$18.912

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ChromeModa Solutions

Germany . 3,297 parts In-Stock

1+ parts

$19.298

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$15.824

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3,297

$19.298

$15.824

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IDEA Electronic Components Group

UK . 2,143 parts In-Stock

1+ parts

$19.298

100+ parts

$18.333

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$17.368

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2,143

$19.298

$18.333

$17.368

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Corphita

USA . 125 parts In-Stock

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Overview

Discover the cutting-edge XMS430FR2311IRGYR microcontroller by Texas Instruments, a game-changer in the industry. With its high-quality design and advanced technology, this product offers unparalleled performance and efficiency. Ideal for a wide range of applications, this microcontroller provides customers with unmatched value and benefits. From industrial automation to IoT devices, the XMS430FR2311IRGYR delivers top-notch performance, making it the perfect choice for your next project. Experience the difference with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring it can withstand various environmental conditions.

Maximum Supply Voltage: 3.6 V

Allows flexibility in power supply options and compatibility with a wide range of applications.

Bit Size: 16

Offers a good balance between computational power and efficiency for a microcontroller.

No. of Terminals: 16

Provides enough I/O options for connecting peripheral devices and sensors to the microcontroller.

Minimum Operating Temperature: -40 °C

Ensures reliable operation in low-temperature environments, making it suitable for industrial applications.

ADC Channels: YES

Allows for analog signals to be converted to digital, enabling the microcontroller to interface with a wide range of sensors.

ROM Words: 3840

Offers sufficient memory capacity for storing program instructions and data.

Peripherals: PWM, RTC, TIMER(2)

Includes essential peripherals like PWM for precise control, RTC for accurate timekeeping, and timers for scheduling tasks.

Maximum Clock Frequency: 16 MHz

Provides high processing speed for quick execution of tasks and efficient performance.

RAM Bytes: 1024

Offers enough memory for data storage and manipulation during program execution.

Analog To Digital Convertors: 8-Ch 10-Bit

Enables the microcontroller to accurately capture and process analog signals from multiple channels.

Connectivity: I2C, IRDA, SPI, UART

Supports various communication protocols for interfacing with external devices and systems.

Technical Specifications

Microcontrollers XMS430FR2311IRGYR attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

16

Maximum Clock Frequency:

16 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

R-PQCC-N16

Length:

4 mm

No. of I/O Lines:

12

No. of Terminals:

16

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

RAM Bytes:

1024

ROM Words:

3840

ROM Programmability:

FRAM

Maximum Seated Height:

1 mm

Speed:

16 rpm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1.8 V

Nominal Supply Voltage:

2.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

3.5 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C, IRDA, SPI, UART

Peripherals:

PWM, RTC, TIMER(2)

Analog To Digital Convertors:

8-Ch 10-Bit

Trade Compliance

XMS430FR2311IRGYR Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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