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TRF1212IRGZTG3

Texas Instruments

TRF1212IRGZTG3 by Texas Instruments

TRF1212IRGZTG3 by Texas Instruments is a RF down converter with 2400-3550 MHz output frequency range, 90 dB gain, and 4.7 dB noise figure. It is ideal for applications requiring high-performance RF signal conversion in wireless communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,029 parts In-Stock

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4,029

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Vyrian

USA . 3,228 parts In-Stock

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3,228

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,217 parts In-Stock

1+ parts

$1.959

100+ parts

$181.913

1k+ parts

$1.763

10k+ parts

-

1,217

$1.959

$181.913

$1.763

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DigiPath Technology Company

USA . 1,947 parts In-Stock

1+ parts

$2.157

100+ parts

$1.984

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1,947

$2.157

$1.984

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ChromeModa Solutions

Germany . 3,289 parts In-Stock

1+ parts

$2.201

100+ parts

$1.805

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3,289

$2.201

$1.805

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IDEA Electronic Components Group

UK . 796 parts In-Stock

1+ parts

$2.201

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$1.981

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796

$2.201

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$1.981

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$2.804

100+ parts

$2.776

1k+ parts

$2.663

10k+ parts

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100

$2.804

$2.776

$2.663

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One Stop Electronics

USA . 1,434 parts In-Stock

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$7.000

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1,434

$7.000

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Semicontronic

India . 213 parts In-Stock

1+ parts

$16.000

100+ parts

$15.600

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$15.520

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213

$16.000

$15.600

$15.520

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AZTECH Wire

Italy . 884 parts In-Stock

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$17.813

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884

$17.813

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Ampacity Inc.

Singapore . 1,383 parts In-Stock

1+ parts

$24.000

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1,383

$24.000

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Corphita

USA . 2,313 parts In-Stock

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Corohmni

South Africa . 480 parts In-Stock

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Overview

Experience seamless RF/Microwave Up/Down Conversion with the TRF1212IRGZTG3 by Texas Instruments. Crafted with precision and expertise, this high-quality component offers unparalleled performance in a variety of applications. From telecommunications to aerospace, this versatile device provides reliable and efficient signal conversion. Elevate your projects with the TRF1212IRGZTG3 and enjoy the benefits of its cutting-edge technology, ensuring superior results every time. Trust in Texas Instruments for top-notch solutions that deliver value, efficiency, and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and easy to handle, while also providing durability and protection to the internal components.

Maximum RF Output Frequency: 3550 MHz

The high maximum RF output frequency allows for a wide range of applications and versatility in signal processing.

Construction: COMPONENT

The component-based construction ensures reliability and ease of maintenance, as individual components can be easily accessed and replaced if needed.

Minimum RF Output Frequency: 2400 MHz

The low minimum RF output frequency ensures compatibility with a wide range of input signals, making the product suitable for various RF applications.

Power Supplies (V): 5

The use of a standard 5V power supply simplifies the power requirements and makes integration into existing systems straightforward.

No. of Terminals: 48

The high number of terminals allows for flexibility in connectivity options and enables the product to be used in complex RF systems that require multiple connections.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance in a wide range of environmental conditions, making the product suitable for outdoor or harsh environments.

Minimum Down Conversion Gain: 90 dB

The high minimum down conversion gain indicates efficient signal conversion and amplification, resulting in improved signal quality and accuracy.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the product to be used in cold temperature environments without compromising performance or reliability.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides corrosion resistance and ensures stable electrical contact, promoting long-term reliability and signal integrity.

LO Tunable: YES

The ability to tune the local oscillator (LO) allows for precise frequency control and optimization, making the product suitable for applications that require fine-tuning of RF signals.

RF or Microwave Device Type: DOWN CONVERTER

As a down converter, the product can efficiently convert high-frequency RF signals to a lower intermediate frequency, making it ideal for systems that require signal processing or demodulation.

Characteristic Impedance: 50 ohm

The standard 50 ohm characteristic impedance ensures compatibility with a wide range of RF components and enables seamless integration into existing RF systems.

Minimum Intermediate Frequency (IF): 400 MHz

The low minimum intermediate frequency enables efficient signal processing and filtering, making the product suitable for applications that require precise frequency control.

Maximum Noise Figure: 4.7 dB

The low maximum noise figure indicates minimal signal degradation and noise interference, ensuring high signal fidelity and accuracy in signal processing applications.

Minimum Input Power (CW): 20 dBm

The high minimum input power handling capability allows the product to handle high-power RF signals without distortion or damage, ensuring reliable performance in demanding RF environments.

Maximum Intermediate Frequency (IF): 500 MHz

The high maximum intermediate frequency capability enables the product to process a wide range of signal frequencies, making it versatile and suitable for various RF applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and integration into existing systems, saving time and effort during setup and deployment.

Technical Specifications

RF/Microwave Up/Down Converters TRF1212IRGZTG3 attributes and parameters. Explore more RF/Microwave Up/Down Converters devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Minimum Down Conversion Gain:

90 dB

Maximum Intermediate Frequency (IF):

500 MHz

Minimum Intermediate Frequency (IF):

400 MHz

Minimum Input Power (CW):

20 dBm

JESD-609 Code:

e3

LO Tunable:

YES

Mounting Feature:

Maximum Noise Figure:

4.7 dB

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC48,.27SQ,20

Power Supplies (V):

5

Maximum RF Output Frequency:

3550 MHz

Minimum RF Output Frequency:

2400 MHz

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Up/Down Converters

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

TRF1212IRGZTG3 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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