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TRF1212

Texas Instruments

TRF1212 by Texas Instruments

TRF1212 by Texas Instruments is a RF/Microwave DOWN CONVERTER with freq range 2400-3550 MHz. Features include 90 dB Down Conversion Gain, LO Tunable, and 4.7 dB Noise Figure. Ideal for applications requiring high-performance RF signal conversion in the frequency range of 2400-3550 MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,077 parts In-Stock

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5,077

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Digiode

USA . 4,014 parts In-Stock

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4,014

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Distributors (Availability)

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Parana Technologies

USA . 1,878 parts In-Stock

1+ parts

$2.626

100+ parts

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$3.117

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1,878

$2.626

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$3.117

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ChromeModa Solutions

Germany . 4,199 parts In-Stock

1+ parts

$2.951

100+ parts

$2.420

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$2.951

$2.420

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IDEA Electronic Components Group

UK . 209 parts In-Stock

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$2.951

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$2.656

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209

$2.951

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$2.656

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Ampacity Inc.

Singapore . 357 parts In-Stock

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$5.000

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357

$5.000

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AZTECH Wire

Italy . 199 parts In-Stock

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$11.826

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199

$11.826

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One Stop Electronics

USA . 255 parts In-Stock

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$21.000

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$21.000

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Semicontronic

India . 1,373 parts In-Stock

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$22.000

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$21.450

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$21.340

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$22.000

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$21.340

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DigiPath Technology Company

USA . 959 parts In-Stock

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$2.661

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Corphita

USA . 335 parts In-Stock

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Corohmni

South Africa . 53 parts In-Stock

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Overview

Elevate your RF/microwave system with the TRF1212 by Texas Instruments. Crafted with precision and expertise, this component offers unparalleled quality and reliability for a wide range of applications. From down conversion gain to noise figure, every detail is carefully designed to maximize performance and efficiency. Experience seamless integration, superior functionality, and exceptional value with the TRF1212. Upgrade your technology today and see the difference that Texas Instruments can make in your projects.

Feature Benefit Bullets

Maximum RF Output Frequency: 3550 MHz

Allows for high frequency operation, making it suitable for a wide range of RF applications.

Construction: COMPONENT

Component-based construction provides flexibility for integration into various systems and allows for customization.

Minimum RF Output Frequency: 2400 MHz

Covers a wide range of frequencies, making it versatile for different RF signal processing needs.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ensuring reliability in various operating conditions.

Minimum Down Conversion Gain: 90 dB

Provides high gain for efficient signal conversion, ensuring minimal loss in signal quality.

Minimum Operating Temperature: -40 °C

Operates in low temperatures, making it suitable for outdoor or harsh environments.

LO Tunable: YES

Allows for tuning of the local oscillator frequency, providing flexibility in frequency conversion.

RF or Microwave Device Type: DOWN CONVERTER

Specifically designed for down conversion applications, ensuring optimal performance for signal processing.

Characteristic Impedance: 50 ohm

Matches standard impedance levels, ensuring compatibility with common RF systems and components.

Minimum Intermediate Frequency (IF): 400 MHz

Provides flexibility in selecting intermediate frequencies, catering to various signal processing requirements.

Maximum Noise Figure: 4.7 dB

Low noise figure helps in maintaining signal integrity and quality during conversion processes.

Minimum Input Power (CW): 20 dBm

Can handle relatively high input power levels, enabling efficient signal processing.

Maximum Intermediate Frequency (IF): 500 MHz

Supports a wide range of intermediate frequencies, allowing for versatility in signal processing applications.

Technical Specifications

RF/Microwave Up/Down Converters TRF1212 attributes and parameters. Explore more RF/Microwave Up/Down Converters devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Minimum Down Conversion Gain:

90 dB

Maximum Intermediate Frequency (IF):

500 MHz

Minimum Intermediate Frequency (IF):

400 MHz

Minimum Input Power (CW):

20 dBm

LO Tunable:

YES

Maximum Noise Figure:

4.7 dB

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RF Output Frequency:

3550 MHz

Minimum RF Output Frequency:

2400 MHz

RF or Microwave Device Type:

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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