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TMX5700714PGEQQ1

Texas Instruments

TMX5700714PGEQQ1 by Texas Instruments

TMX5700714PGEQQ1 by Texas Instruments is a 32-bit microcontroller with 786432 ROM words and 131072 RAM bytes. It features 24-Ch 12-Bit ADC channels, CAN(3), I2C, LIN connectivity, and operates at a max clock frequency of 80 MHz. Ideal for automotive applications due to AEC-Q100 screening level and wide temperature range from -40 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,795 parts In-Stock

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Digiode

USA . 2,911 parts In-Stock

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AZTECH Wire

Italy . 800 parts In-Stock

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$17.177

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$17.177

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One Stop Electronics

USA . 1,106 parts In-Stock

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$24.000

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Parana Technologies

USA . 1,962 parts In-Stock

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$61.478

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$61.478

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DigiPath Technology Company

USA . 2,343 parts In-Stock

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$67.694

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$62.279

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$67.694

$62.279

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IDEA Electronic Components Group

UK . 1,613 parts In-Stock

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$69.076

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$65.622

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$62.168

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1,613

$69.076

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$62.168

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ChromeModa Solutions

Germany . 241 parts In-Stock

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$69.076

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$56.642

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Corphita

USA . 620 parts In-Stock

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Microchip USA

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Overview

Experience unparalleled performance and reliability with the TMX5700714PGEQQ1 microcontroller by industry leader Texas Instruments. Designed for automotive applications, this powerful 32-bit microcontroller offers a wide range of peripherals including ADC channels, PWM channels, and connectivity options like CAN and LIN. With a robust ROM size of 786432 words and a RAM size of 131072 bytes, this microcontroller delivers exceptional processing power to meet your project needs. Trust in Texas Instruments to provide cutting-edge technology that exceeds expectations. Choose the TMX5700714PGEQQ1 for your automotive electronics projects and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the microcontroller, ensuring reliability in various operating conditions.

Maximum Supply Voltage: 1.32 V

Allows for efficient power management and compatibility with low voltage systems.

Bit Size: 32

Offers high computational capabilities and performance for a wide range of applications.

ADC Channels: YES

Enables analog to digital conversion for interfacing with sensors and other analog components.

ROM Words: 786432

Provides ample storage capacity for program instructions and data.

Temperature Grade: AUTOMOTIVE

Designed to withstand harsh automotive environments, ensuring reliable operation in vehicles.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microcontroller energy efficient and reliable.

Analog To Digital Convertors: 24-Ch 12-Bit

Multiple ADC channels with high resolution allow for precise analog signal conversion.

Connectivity: CAN(3), I2C, LIN, MIBSPI(3), SCI(2), SPI

Supports various communication protocols for seamless integration with other devices and systems.

No. of I/O Lines: 64

Abundance of I/O lines provide flexibility for connecting to external devices and peripherals.

Technical Specifications

Microcontrollers TMX5700714PGEQQ1 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

80 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G144

Length:

20 mm

No. of I/O Lines:

64

No. of Terminals:

144

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

RAM Bytes:

131072

ROM Words:

786432

ROM Programmability:

FLASH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.6 mm

Speed:

160 rpm

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

20 mm

Peripheral IC Type:

Data EEPROM Size:

64K

Connectivity:

CAN(3), I2C, LIN, MIBSPI(3), SCI(2), SPI

Peripherals:

CAP(6), DMA(16), POR, PWM(14), QEP(2), TIMER(40), WDT

Analog To Digital Convertors:

24-Ch 12-Bit

Trade Compliance

TMX5700714PGEQQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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