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TMSDVC5409APGE16G4

Texas Instruments

TMSDVC5409APGE16G4 by Texas Instruments

TMSDVC5409APGE16G4 by Texas Instruments is a 16-bit DSP with 32768 RAM words, 20 MHz clock frequency, and 23-bit address bus width. Ideal for digital signal processing applications requiring low power mode, it features a max supply voltage of 1.65 V and boundary scan capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 3,438 parts In-Stock

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Digiode

USA . 2,800 parts In-Stock

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Connector Distribution Corp

USA . 4 parts In-Stock

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Right Parts Inc.

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AZTECH Wire

Italy . 808 parts In-Stock

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$9.350

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One Stop Electronics

USA . 1,222 parts In-Stock

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Corohmni

South Africa . 584 parts In-Stock

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Parana Technologies

USA . 1,722 parts In-Stock

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ChromeModa Solutions

Germany . 3,086 parts In-Stock

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$73.440

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$60.221

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IDEA Electronic Components Group

UK . 2,017 parts In-Stock

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$73.440

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$69.768

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$66.096

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Corphita

USA . 3,139 parts In-Stock

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DigiPath Technology Company

USA . 1,470 parts In-Stock

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Microchip USA

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Overview

Unlock a world of possibilities with the Texas Instruments TMSDVC5409APGE16G4 Digital Signal Processor. Designed with precision by a trusted manufacturer, this advanced DSP offers unparalleled performance and reliability for a wide range of applications. From audio processing to telecommunications, this powerhouse processor delivers exceptional value and efficiency. Say goodbye to limitations and hello to endless opportunities with the TMSDVC5409APGE16G4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the DSP, making it a reliable choice for various applications.

Maximum Supply Voltage: 1.65 V

The low maximum supply voltage allows for efficient power consumption, making the DSP suitable for low-power applications.

Bit Size: 16

The 16-bit size allows for precise and accurate processing of digital signals, resulting in high-quality output.

RAM Words: 32768

With a large RAM capacity of 32768 words, the DSP can efficiently store and process data, making it suitable for complex signal processing tasks.

Maximum Clock Frequency: 20 MHz

The high maximum clock frequency of 20 MHz enables fast processing speeds, making the DSP ideal for real-time applications.

Technology: CMOS

The CMOS technology used in the DSP ensures low power consumption, high speed operation, and compatibility with various digital systems.

Low Power Mode: YES

The availability of a low power mode allows for further reduction in power consumption, making the DSP energy-efficient and suitable for battery-powered devices.

Technical Specifications

Digital Signal Processors (DSPs) TMSDVC5409APGE16G4 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 3.3V SUPPLY

Address Bus Width:

23

Barrel Shifter:

YES

Bit Size:

16

Boundary Scan:

YES

Maximum Clock Frequency:

20 MHz

External Data Bus Width:

16

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PQFP-G144

JESD-609 Code:

e4

Length:

20 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

144

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP144,.87SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.6,3.3

Qualification:

Not Qualified

RAM Words:

32768

Maximum Seated Height:

1.6 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.65 V

Minimum Supply Voltage:

1.55 V

Nominal Supply Voltage:

1.6 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

20 mm

Peripheral IC Type:

Trade Compliance

TMSDVC5409APGE16G4 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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