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TMS320VC5510AGGW2

Texas Instruments

TMS320VC5510AGGW2 by Texas Instruments

TMS320VC5510AGGW2 by Texas Instruments is a 16-bit DSP with integrated cache, 32-bit external data bus width, and max clock frequency of 50 MHz. Ideal for digital signal processing applications requiring low power consumption and fixed-point format calculations.

Median Price

$20.000

Lifecycle Status

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15

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1k+

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Rochester

USA . 703 parts In-Stock

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$19.600

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Nova Conductors

Japan . 700 parts In-Stock

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Digiode

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Vyrian

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Astute Electronics Inc

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Bristol Electronics

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Inventory MP

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PC Components Company LLC

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Legend Electronics Inc.

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Prism Electronics

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LWI Electronics Inc

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Semi Source

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DF Sales Co.

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Atlantic Semiconductor

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One Stop Electronics

USA . 1,621 parts In-Stock

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AZTECH Wire

Italy . 257 parts In-Stock

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Parana Technologies

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 4,253 parts In-Stock

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IDEA Electronic Components Group

UK . 2,343 parts In-Stock

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Corohmni

South Africa . 711 parts In-Stock

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A-Z Elektronik GmbH

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Perfect Parts

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Corphita

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GreenTree Electronics

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Overview

Unlock the power of cutting-edge technology with the TMS320VC5510AGGW2 by Texas Instruments. As a leader in digital signal processors (DSPs), Texas Instruments delivers top-notch quality and reliability. This versatile product is perfect for a wide range of applications, offering customers unparalleled value and performance. Experience the benefits of integrated cache, low power mode, and multiple DMA channels. Elevate your projects with the TMS320VC5510AGGW2 and discover the advantages of this high-quality solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good protection for the internal components of the DSP, making it durable and resistant to external factors.

Integrated Cache: YES

Integrated cache helps in improving the processing speed and efficiency of the DSP by storing frequently accessed data for quick retrieval.

Maximum Supply Voltage: 1.65 V

The maximum supply voltage of 1.65V ensures that the DSP operates within safe voltage levels, preventing damage to the device.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation of the DSP onto circuit boards, saving space and simplifying the manufacturing process.

Peripheral IC Type: DIGITAL SIGNAL PROCESSOR, OTHER

Being a digital signal processor, this product is designed specifically for processing digital signals efficiently, making it a suitable choice for signal processing applications.

Maximum Clock Frequency: 50 MHz

With a maximum clock frequency of 50 MHz, this DSP can handle high-speed signal processing tasks effectively, ensuring smooth operation in demanding applications.

Technical Specifications

Digital Signal Processors (DSPs) TMS320VC5510AGGW2 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 3.3V SUPPLY

Address Bus Width:

22

Barrel Shifter:

NO

Bit Size:

16

Boundary Scan:

YES

Maximum Clock Frequency:

50 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Integrated Cache:

YES

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B240

JESD-609 Code:

e0

Length:

15 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

6

No. of External Interrupts:

6

No. of Terminals:

240

No. of Timers:

2

On Chip Data RAM Width:

16

On Chip Program ROM Width:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA240,17X17,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

220

Power Supplies (V):

1.6,3.3

Qualification:

Not Qualified

RAM Words:

32768

ROM Programmability:

MROM

Maximum Seated Height:

1.4 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.65 V

Minimum Supply Voltage:

1.55 V

Nominal Supply Voltage:

1.6 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

20

Width:

15 mm

Peripheral IC Type:

Trade Compliance

TMS320VC5510AGGW2 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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