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THCT4502BFK

Texas Instruments

THCT4502BFK by Texas Instruments

THCT4502BFK by Texas Instruments is a Memory Controller with 18-bit Address Bus, CMOS Technology, and 5V Nominal Voltage. It is used in DRAM applications for commercial temperature grade environments. The package style is chip carrier with 68 terminals and surface mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,197 parts In-Stock

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Digiode

USA . 3,488 parts In-Stock

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3,488

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Distributors (Availability)

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AZTECH Wire

Italy . 213 parts In-Stock

1+ parts

$13.956

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213

$13.956

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One Stop Electronics

USA . 1,481 parts In-Stock

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$14.000

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1,481

$14.000

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Parana Technologies

USA . 988 parts In-Stock

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$51.222

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988

$51.222

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DigiPath Technology Company

USA . 52 parts In-Stock

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$56.402

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$51.890

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52

$56.402

$51.890

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ChromeModa Solutions

Germany . 2,786 parts In-Stock

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$57.553

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$47.193

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2,786

$57.553

$47.193

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IDEA Electronic Components Group

UK . 67 parts In-Stock

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$57.553

100+ parts

$54.675

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$51.798

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67

$57.553

$54.675

$51.798

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Corohmni

South Africa . 453 parts In-Stock

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$79.557

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453

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Corphita

USA . 4,699 parts In-Stock

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4,699

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Overview

Unlock the power of advanced memory control with the THCT4502BFK by Texas Instruments. Crafted with precision and expertise, this cutting-edge technology offers unparalleled performance and reliability in memory controllers. Ideal for a wide range of applications, this product delivers seamless operation and efficiency. Experience the value and benefits of Texas Instruments' superior quality in every use, making your projects stand out with ease. Choose the THCT4502BFK for unbeatable advantages and elevate your work to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides durability and reliability, ensuring a longer lifespan for the memory controller.

Surface Mount: YES

Allows for easy installation and integration into various electronic devices.

Maximum Supply Voltage: 5.5 V

Provides a wide range of operating voltage, making it compatible with different power sources.

Address Bus Width: 18

The wide address bus width allows for efficient data transfer and communication within the memory controller.

Package Shape: SQUARE

The square shape enables compact and space-saving design for the memory controller.

No. of Terminals: 68

Having a higher number of terminals allows for more connectivity options and flexibility in system design.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers high density and excellent thermal performance for the memory controller.

Minimum Supply Voltage: 4.5 V

Even at low supply voltages, the memory controller can still operate efficiently, increasing its versatility.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, the memory controller can withstand harsh environmental conditions.

Minimum Operating Temperature: 0 °C

The memory controller can function reliably even in low-temperature environments, ensuring consistent performance.

Terminal Position: QUAD

The quad terminal position allows for easy and secure connections, enhancing the reliability of the memory controller.

Maximum Seated Height: 2.03 mm

The low maximum seated height enables the memory controller to be used in slim and compact devices.

Width: 24.13 mm

The moderate width of the memory controller makes it suitable for a wide range of applications and integration options.

Length: 24.13 mm

With a square shape and equal length and width dimensions, the memory controller can easily fit into various electronic devices.

Temperature Grade: COMMERCIAL

Designed for commercial applications, the memory controller meets industry standards and delivers consistent performance.

Peripheral IC Type: MEMORY CONTROLLER, DRAM

Featuring DRAM memory controller technology, this product offers high-speed data processing and efficient memory management.

Technology: CMOS

Utilizing CMOS technology provides low power consumption and high performance for the memory controller.

Terminal Form: NO LEAD

The no-lead terminal form reduces the risk of soldering issues and ensures secure connections for the memory controller.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5V ensures compatibility with standard power sources and ease of integration.

No. of Banks: 4

Having multiple banks allows for efficient organization and management of memory resources, improving overall performance.

Terminal Pitch: 1.27 mm

The tight terminal pitch provides high-density integration options and secure connections for the memory controller.

Technical Specifications

Memory Controllers THCT4502BFK attributes and parameters. Explore more Memory Controllers devices from Texas Instruments

Specs

Address Bus Width:

18

Boundary Scan:

NO

External Data Bus Width:

0

JESD-30 Code:

S-CQCC-N68

Length:

24.13 mm

Low Power Mode:

NO

No. of Banks:

4

No. of Terminals:

68

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

24.13 mm

Peripheral IC Type:

Trade Compliance

THCT4502BFK Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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