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THCT4502-125JD

Texas Instruments

THCT4502-125JD by Texas Instruments

THCT4502-125JD by Texas Instruments is a Memory Controller with 18-bit Address Bus, 5V Nominal Voltage, and 70°C Max Operating Temp. Ideal for DRAM applications, it features a Ceramic/Metal-Sealed Co-fired package body suitable for commercial-grade temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,238 parts In-Stock

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Digiode

USA . 1,633 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,127 parts In-Stock

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$12.000

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$12.000

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AZTECH Wire

Italy . 694 parts In-Stock

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$16.930

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694

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Corohmni

South Africa . 2,479 parts In-Stock

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$29.814

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Parana Technologies

USA . 2,124 parts In-Stock

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$68.784

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IDEA Electronic Components Group

UK . 2,076 parts In-Stock

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$77.285

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$73.421

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$69.556

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2,076

$77.285

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$69.556

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ChromeModa Solutions

Germany . 2,041 parts In-Stock

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$77.285

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$63.374

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Corphita

USA . 3,671 parts In-Stock

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DigiPath Technology Company

USA . 1,295 parts In-Stock

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$69.680

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Overview

Unlock the power of cutting-edge technology with the THCT4502-125JD by Texas Instruments. Crafted with precision and expertise, this memory controller offers unparalleled reliability and performance. Ideal for a wide range of applications, this versatile device boasts seamless integration and seamless operation. Experience the value and benefits of superior quality with the THCT4502-125JD, where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This high-quality material ensures durability and efficient heat dissipation, making the product reliable and long-lasting.

Maximum Supply Voltage: 5.5 V

The high maximum supply voltage allows for flexibility in power input, making it compatible with a wide range of systems.

Address Bus Width: 18

The wide address bus width allows for faster data transfer and processing, enhancing the performance of the memory controller.

Package Shape: RECTANGULAR

The rectangular shape makes it easier to integrate the memory controller into existing systems or designs.

Power Supplies (V): 5

The standard power supply voltage of 5V ensures compatibility with most devices and systems.

No. of Terminals: 48

The high number of terminals allows for flexibility in connections and compatibility with various interfaces.

Package Style (Meter): IN-LINE

The in-line package style saves space and allows for easy installation in compact devices or systems.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage ensures efficient power usage and helps in preventing overloading or overheating.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature ensures stable performance even in challenging environments or under heavy load.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures reliable performance even in cold conditions or when the device is first powered on.

Terminal Position: DUAL

The dual terminal position allows for secure and stable connections, reducing the risk of disconnection or signal loss.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliability and stable performance in standard operating conditions.

Peripheral IC Type: MEMORY CONTROLLER, DRAM

The memory controller with DRAM support allows for efficient memory management and faster data processing, enhancing overall system performance.

Technology: CMOS

The CMOS technology offers low power consumption and high-speed operation, making the memory controller energy-efficient and responsive.

Terminal Form: THROUGH-HOLE

The through-hole terminal form factor ensures easy and secure connections, making it suitable for a wide range of applications and installations.

Maximum Supply Current: 15 mA

The low maximum supply current ensures efficient power usage and minimizes the risk of damage due to overloading or overheating.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5V ensures compatibility with most devices and systems, making it a versatile choice for various applications.

No. of Banks: 4

The multiple banks provide efficient memory management and organization, allowing for better data access and processing speed.

Terminal Pitch: 2.54 mm

The standard terminal pitch of 2.54mm ensures compatibility with common connectors and allows for easy integration into existing systems or designs.

Technical Specifications

Memory Controllers THCT4502-125JD attributes and parameters. Explore more Memory Controllers devices from Texas Instruments

Specs

Address Bus Width:

18

Boundary Scan:

NO

External Data Bus Width:

0

JESD-30 Code:

R-CDIP-T48

Low Power Mode:

NO

No. of Banks:

4

No. of Terminals:

48

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP48,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Memory Controllers

Maximum Supply Current:

15 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Peripheral IC Type:

Trade Compliance

THCT4502-125JD Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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