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THCT1010-160FKM

Texas Instruments

THCT1010-160FKM by Texas Instruments

THCT1010-160FKM by Texas Instruments is a DSP Peripheral with 35-bit output data bus width, 16-bit external data bus width, and operates at temperatures from -55 to 125°C. Ideal for military applications requiring a CMOS technology-based DSP peripheral with a max supply voltage of 5.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,168 parts In-Stock

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Digiode

USA . 2,931 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 249 parts In-Stock

1+ parts

$5.297

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249

$5.297

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One Stop Electronics

USA . 777 parts In-Stock

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$15.000

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777

$15.000

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Parana Technologies

USA . 2,102 parts In-Stock

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$15.568

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$15.941

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2,102

$15.568

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$15.941

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DigiPath Technology Company

USA . 755 parts In-Stock

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$17.142

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$15.771

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755

$17.142

$15.771

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ChromeModa Solutions

Germany . 5,082 parts In-Stock

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$17.492

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$14.343

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5,082

$17.492

$14.343

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IDEA Electronic Components Group

UK . 9 parts In-Stock

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$17.492

100+ parts

$16.617

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$15.743

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9

$17.492

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$15.743

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Corohmni

South Africa . 2,385 parts In-Stock

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$26.896

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Corphita

USA . 4,138 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the THCT1010-160FKM by Texas Instruments, a top-of-the-line DSP Peripheral that offers unmatched performance and versatility. With a military-grade temperature grade and cutting-edge CMOS technology, this chip carrier package boasts a wide range of applications and is ideal for multiplier accumulator/summer functions. Trust in Texas Instruments' reputation for excellence and innovation as you elevate your projects with the THCT1010-160FKM, providing value, efficiency, and exceptional results for all your digital signal processing needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and stability to the product, making it suitable for harsh operating conditions.

Maximum Supply Voltage: 5.5 V

The high maximum supply voltage allows for flexibility in power sources, ensuring compatibility with various systems.

Output Data Bus Width: 35

With a wide output data bus width, this product can handle large amounts of data efficiently, enhancing performance.

Minimum Operating Temperature: -55 °C

The wide range of minimum operating temperature ensures functionality in extreme cold environments.

Maximum Seated Height: 2.03 mm

The low maximum seated height allows for compact design and integration into space-constrained applications.

Temperature Grade: MILITARY

Designed for military-grade applications, this product offers high reliability and performance under demanding conditions.

Technical Specifications

DSP Peripherals THCT1010-160FKM attributes and parameters. Explore more DSP Peripherals devices from Texas Instruments

Specs

Boundary Scan:

NO

External Data Bus Width:

16

JESD-30 Code:

S-CQCC-N68

Length:

24.13 mm

Low Power Mode:

NO

No. of Terminals:

68

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Data Bus Width:

35

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC68,.95SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Sub-Category:

DSP Peripherals

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

24.13 mm

Trade Compliance

THCT1010-160FKM Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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