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THCT1010-160JDM

Texas Instruments

THCT1010-160JDM by Texas Instruments

THCT1010-160JDM by Texas Instruments is a DSP Peripheral with 35-bit output data bus width, 16-bit external data bus width, and operates at temperatures from -55 to 125 °C. Ideal for military applications requiring a CMOS technology-based multiplier accumulator/summer peripheral IC with a supply voltage range of 4.5V to 5.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,767 parts In-Stock

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7,767

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Digiode

USA . 4,936 parts In-Stock

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4,936

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 506 parts In-Stock

1+ parts

$16.880

100+ parts

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506

$16.880

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One Stop Electronics

USA . 1,059 parts In-Stock

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$32.000

100+ parts

-

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1,059

$32.000

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Parana Technologies

USA . 146 parts In-Stock

1+ parts

$46.013

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146

$46.013

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DigiPath Technology Company

USA . 814 parts In-Stock

1+ parts

$50.666

100+ parts

$46.613

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814

$50.666

$46.613

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ChromeModa Solutions

Germany . 2,329 parts In-Stock

1+ parts

$51.700

100+ parts

$42.394

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2,329

$51.700

$42.394

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IDEA Electronic Components Group

UK . 1,835 parts In-Stock

1+ parts

$51.700

100+ parts

$49.115

1k+ parts

$46.530

10k+ parts

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1,835

$51.700

$49.115

$46.530

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Corohmni

South Africa . 112 parts In-Stock

1+ parts

$56.469

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112

$56.469

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Corphita

USA . 4,033 parts In-Stock

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4,033

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Overview

Experience unparalleled performance with the THCT1010-160JDM by Texas Instruments, a top-tier manufacturer known for superior quality and reliability. As a cutting-edge DSP Peripheral, this product offers unmatched value and benefits to customers in various industries. From military applications to advanced signal processing tasks, this versatile component boasts exceptional power and efficiency. Elevate your projects to new heights with the THCT1010-160JDM and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent durability and reliability, making this product suitable for rugged environments.

Maximum Supply Voltage: 5.5 V

With a high maximum supply voltage of 5.5V, this product can handle a wide range of power supply inputs, offering flexibility in various applications.

Output Data Bus Width: 35

The wide output data bus width of 35 allows for high-speed data processing and transfer, enhancing the overall performance of the product.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C ensures that this product can function reliably in extremely cold environments, expanding its usability.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, making it energy-efficient and reliable for extended use.

Technical Specifications

DSP Peripherals THCT1010-160JDM attributes and parameters. Explore more DSP Peripherals devices from Texas Instruments

Specs

Boundary Scan:

NO

External Data Bus Width:

16

JESD-30 Code:

R-CDIP-T64

Low Power Mode:

NO

No. of Terminals:

64

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Data Bus Width:

35

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP64,.9

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

DSP Peripherals

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

22.86 mm

Trade Compliance

THCT1010-160JDM Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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