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TDA2EGADQABCQ1

Texas Instruments

TDA2EGADQABCQ1 by Texas Instruments

TDA2EGADQABCQ1 by Texas Instruments is a multi-functional peripheral with 32-bit external data bus width, 512K RAM words, and 38.4 MHz max clock frequency. Ideal for automotive applications, it supports various bus compatibilities like CAN, Ethernet, I2C, IRDA, PCI, SPI, UART & USB.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,728 parts In-Stock

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7,728

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Digiode

USA . 2,338 parts In-Stock

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2,338

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 306 parts In-Stock

1+ parts

$18.777

100+ parts

-

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306

$18.777

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One Stop Electronics

USA . 215 parts In-Stock

1+ parts

$28.000

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215

$28.000

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Corohmni

South Africa . 2,588 parts In-Stock

1+ parts

$68.691

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2,588

$68.691

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Parana Technologies

USA . 2,197 parts In-Stock

1+ parts

$73.017

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2,197

$73.017

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DigiPath Technology Company

USA . 703 parts In-Stock

1+ parts

$80.401

100+ parts

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703

$80.401

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ChromeModa Solutions

Germany . 4,424 parts In-Stock

1+ parts

$82.042

100+ parts

$67.274

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4,424

$82.042

$67.274

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IDEA Electronic Components Group

UK . 1,498 parts In-Stock

1+ parts

$82.042

100+ parts

$77.940

1k+ parts

$73.838

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1,498

$82.042

$77.940

$73.838

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Corphita

USA . 258 parts In-Stock

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258

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Overview

Enhance your automotive electronics with the TDA2EGADQABCQ1 by Texas Instruments, a cutting-edge multi-functional peripheral that offers unparalleled performance and reliability. With Texas Instruments' renowned quality and expertise in the industry, this product ensures superior functionality and durability for a wide range of applications. From CAN to USB compatibility, this versatile device provides seamless integration and maximum efficiency. Invest in the TDA2EGADQABCQ1 today and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and lightweight, making the product suitable for everyday use.

Maximum Supply Voltage: 1.2 V

Low maximum supply voltage helps in reducing power consumption and enhancing energy efficiency.

RAM Words: 512K

Large RAM capacity of 512K allows for efficient multi-tasking and handling of complex operations.

Maximum Clock Frequency: 38.4 MHz

High clock frequency enables fast processing speeds and smooth operation of the device.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliability, making it a great choice for electronics.

Technical Specifications

Multi-functional Peripherals TDA2EGADQABCQ1 attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

Bus Compatibility:

CAN; ETHERNET; I2C; IRDA; PCI; SPI; UART; USB

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

32

JESD-30 Code:

S-PBGA-B760

JESD-609 Code:

e1

Length:

23 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

215

No. of Terminals:

760

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

RAM Words:

512K

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Trade Compliance

TDA2EGADQABCQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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