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SNJ54BCT541J

Texas Instruments

SNJ54BCT541J by Texas Instruments

SNJ54BCT541J by Texas Instruments is an 8-bit bus driver with a propagation delay of 8.7 ns, suitable for military applications. It operates at a nominal voltage of 5V and has a max power supply current of 72mA. The package style is in-line with through-hole terminal form and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Digiode

USA . 1,395 parts In-Stock

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Vyrian

USA . 994 parts In-Stock

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Bristol Electronics

USA . 24 parts In-Stock

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Atlantic Semiconductor

USA . 24 parts In-Stock

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Electronics Depot

USA . 4 parts In-Stock

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Resion

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Andel Nordic

Denmark . 787 parts In-Stock

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$3.321

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$3.188

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$3.188

787

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AZTECH Wire

Italy . 288 parts In-Stock

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$8.004

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Parana Technologies

USA . 2,334 parts In-Stock

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$16.731

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$16.984

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ChromeModa Solutions

Germany . 5,753 parts In-Stock

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$18.799

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$15.415

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IDEA Electronic Components Group

UK . 908 parts In-Stock

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$17.859

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$16.919

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908

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One Stop Electronics

USA . 1,403 parts In-Stock

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$51.000

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Corphita

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Microchip USA

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DigiPath Technology Company

USA . 1,119 parts In-Stock

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$16.949

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Unlock the power of reliable communication with the Texas Instruments SNJ54BCT541J bus driver & transceiver. Crafted with precision and expertise, this high-quality ceramic, glass-sealed component ensures seamless data transmission with a nominal supply voltage of 5V. Ideal for military-grade applications, this versatile device boasts a propagation delay of 8.7ns and a 3-STATE output for enhanced functionality. Trust in Texas Instruments for unparalleled performance and efficiency in your electronic projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and reliability for long-term use.

Propagation Delay At Nominal Supply: 8.7 ns

Offers fast signal transmission for efficient performance.

Screening Level: MIL-PRF-38535

Meets military standards for high-quality and rugged construction.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage for compatibility with various systems.

Load Capacitance (CL): 50 pF

Optimized for handling typical capacitance loads in bus driver applications.

Minimum Operating Temperature: -55 °C

Can operate in harsh cold environments without issues.

Maximum Operating Temperature: 125 °C

Suitable for use in high-temperature conditions without overheating.

Technology: BICMOS

Combines the advantages of both bipolar and CMOS technologies for improved performance.

Technical Specifications

Bus Driver & Transceivers SNJ54BCT541J attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

WITH DUAL OUTPUT ENABLE

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

BCT/FBT

JESD-30 Code:

R-GDIP-T20

JESD-609 Code:

e0

Length:

24.195 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

48 Amp

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

72 mA

Propagation Delay At Nominal Supply:

8.7 ns

Propagation Delay (tpd):

8.7 ns

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Translation:

N/A

Width:

7.62 mm

Trade Compliance

SNJ54BCT541J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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